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10VJE Datasheets Context Search
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Contextual Info: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ). |
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KTC3198L 150mA. toKTA1266L 100uA 100uA 150mA 100mA 10VIeF 10VJe | |
2sa1929Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for |
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2SA1929 2SA1929 -100V 300mA, 100Hz) 110mV 270Hz X10-3 |