10X8X0 Search Results

SBT3904F

Abstract: SBT3906F
Contextual Info: SBT3904F Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with SBT3906F Ordering Information

SBT42F

Abstract: SBT92F IE 500
Contextual Info: SBT42F Semiconductor NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=SBT42F : 300V • Complementary pair with SBT92F Ordering Information Type NO. Marking SBT42F Package Code

PC 13001 TRANSISTOR

Abstract: IC PC 124 STD123S STA124S
Contextual Info: STA124S Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123S Ordering Information Type NO. Marking STA124S Package Code 124

SBT2222F

Abstract: SBT2907F IC600
Contextual Info: SBT2222F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907F Ordering Information

STD123SF

Contextual Info: STD123SF Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability

KN3903S

Abstract: KN3905S
Contextual Info: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.

KTC3876S

Abstract: KTA1505S
Contextual Info: SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A H 1 P Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage

KN2222AS

Abstract: KN2222S ZGA SOT23
Contextual Info: SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Low Leakage Current Low Saturation Voltage D : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. 3 G A 2 H : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

wa SOT-23

Abstract: STN2222AS STN2907AS
Contextual Info: STN2907AS Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current • Low collector saturation voltage • Complementary pair with STN2222AS Ordering Information Type NO.

kst207

Abstract: STN3904SF STN3904 STN3906SF
Contextual Info: STN3904SF Semiconductor NPN Silicon Transistor Descriptions • General small signal amplifier • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with STN3906SF Ordering Information

Contextual Info: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=-130V, VCEO=-120V H ・Low Leakage Current. 1 : ICBO=-100nA Max. @VCB=-100V

KIA431Z

Abstract: KIA431 KIA431A 3Z SOT-23 KIA431F KIA431B KIA431AT KIA431ZM KIA431ZF
Contextual Info: SEMICONDUCTOR KIA431 Series TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT PROGRAMMABLE PRECISION REFERENCES The KIA431 Series integrated circuits are three-terminal programmable shunt regulator diodes. These monolithic IC voltage reference operate as a low temperature coefficient zener which is programmable from Vref

2N7002KA

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A G ・Rugged and reliable.

BCW29

Abstract: BCW30
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BCW31/32 DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30

KN2907AS

Abstract: KN2907S KN2907S/2907AS
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : VCEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

KN2222S

Abstract: KN2222AS
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN2222S/AS EPITAXIAL PLANAR NPN TRA N SISTO R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : I c E x - 1 0 n A M a x . A B ; V c e = 6 0 V , V e b (o f f ) - 3 V .

BC857

Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C

KTN2222AS

Abstract: KTN2222S KTN2222AS SOT-23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.

MARK YC

Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848 BC848A
Contextual Info: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC846/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES DIM • High Voltage : BC846 V Ceo = 6 5 V . • For Complementary With PNP Type BC856/857/858.

0107MA

Abstract: KTC9018S
Contextual Info: SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L L 3 G H A 2 1 RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage

KTC9011S

Abstract: IC-550 ktc9011
Contextual Info: SEMICONDUCTOR KTC9011S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE E B L L MAXIMUM RATING Ta=25 3 G H A 2 D High Power Gain : Gpe=29dB(Typ. at f=10.7MHz. 1 ) CHARACTERISTIC SYMBOL

Contextual Info: STA8550SF Semiconductor PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STC8050SF Ordering Information Type NO. Marking Package Code STA8550SF 8B□ SOT-23F □ :hFE rank

Contextual Info: SBT42 Semiconductor NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=SBT42 : 300V • Complementary pair with SBT92 Ordering Information Type NO. Marking SBT42 M1A Package Code

Contextual Info: STD123AS Semiconductor NPN Silicon Transistor Features • • • • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. Ordering Information