10XXXXXXXXX Search Results

93c86vi

Abstract: 93C86V
Contextual Info: CAT93C86 Rev. C 16K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION „ „ „ „ „ „ „ „ „ „ „ „ High speed operation: 3 MHz Low power CMOS technology 1.8 to 5.5 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear

93LC86X

Abstract: 100PF AM93LC86
Contextual Info: AM93LC86 16384-bits Serial Electrically Erasable PROM General Description Features • State-of-the-art architecture - Non-volatile data storage - Standard voltage and low voltage operation Vcc: 2.7V ~ 5.5V - Full TTL compatible inputs and outputs - Auto increment read for efficient data dump

93c tssop

Abstract: 93C86
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation

Contextual Info: AT88SC54C Features • Enhanced Intel 80C31 Microcontroller Offers Maximum Security for High Security Smart Card Applications 8 Kbytes E2PROM Program Memory Provides Higher Level of Security than Traditional ROM 8 Kbytes E2PROM Application/Data Memory 768 Bytes Internal RAM

93c66

Abstract: 93C86 01XXXXXXXXX
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention ■ Low power CMOS technology

93C56

Abstract: 93C56 14 pins 93C46SI
Contextual Info: CAT93C46/56/57/66/86 "GREEN" PACKAGES -Lead free 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention

eiaj edr-7320

Abstract: 93c86v
Contextual Info: H EE GEN FR ALO CAT93C86 Die Rev. C 16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 3MHz ■ Sequential read ■ Low power CMOS technology ■ Program enable (PE) pin ■ 1.8 to 5.5 volt operation ■ 1,000,000 Program/erase cycles

ST 93c86

Abstract: CAT93C86 93C86L CAT93C57
Contextual Info: H EE GEN FR ALO CAT93C86 Die Rev. C 16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 3MHz ■ Sequential read ■ Low power CMOS technology ■ Program enable (PE) pin ■ 1.8 to 5.5 volt operation ■ 1,000,000 Program/erase cycles

93c86si

Abstract: ST 93c86 catalyst 93c86 CAT93C86 93C86SI-1 00XXXXXXXX
Contextual Info: H EE GEN FR ALO CAT93C86 Die Rev. C 16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 3MHz ■ 1,000,000 Program/erase cycles ■ Low power CMOS technology ■ 100 year data retention ■ 1.8 to 6.0 volt operation ■ Commercial, industrial and automotive

3m mdr male pcb

Abstract: MDR 68 pin mdr 68 pin CONNECTOR TS-0423 mdr 50 pin CONNECTOR MDR 36 pin plug mdr connector 102xx shielded MDR 26 pin MINI D ribbon 102xx 52 mdr mdr 68
Contextual Info: .050″ I/O MDR Copper Connectors Mating and Accessory Charts Mini D Ribbon Connector Part Number Terminology 10 X XX Connector Type Contact Quantity 1 = Plug Male 2 = Receptacle Female 3 = Junction Shell – XXX XX XX = Number of positions A0 = 100 Positions

M08A

Abstract: NM93C86A
Contextual Info: NM93C86A 16,384-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM93C86A is 16,384 bits of CMOS nonvolatile, electrically erasable memory available in user organized as either 1024 16bit registers or 2048 8-bit registers. The user organization is

93C46SI

Abstract: 93C56 14 pin 93C46 93C66 93C86 93C66 93C46 f 93c66 93C56 14 pins CAT93C46 93C46 dip
Contextual Info: CAT93C46/56/66/86 1K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: 1MHz ■ Self-Timed Write Cycle with Auto-Clear ■ Low Power CMOS Technology ■ Hardware and Software Write Protection ■ Wide Operating Voltage Range Vcc = 4.5V to 5.5V

Contextual Info: HT93LC86 CMOS 16K 3-Wire Serial EEPROM Features • Operating voltage: · Automatic erase-before-write operation 2.2V~5.5V for temperature -40°C to +85°C · Word/chip erase and write operation · Low power consumption - Operating: 5mA max. · Write operation with built-in timer

HT93LC86

Contextual Info: HT93LC86 CMOS 16K 3-Wire Serial EEPROM Features • Operating voltage: 2.2V~5.5V · Automatic erase-before-write operation · Low power consumption - Operating: 5mA max. · Word/chip erase and write operation - Standby: 10mA max. · Software controlled write protection

L1042

Abstract: NM93C46N C46A1 transistor 79t C46A M08A NM93C46 NM93C46A NM93C46M8 L381
Contextual Info: September 1995 Semiconductor N M 9 3C 46/C 4 6A 1,024-Bit Serial Interface, Standard V oltage CM OS EEPROM M IC R O W IR E tm Synchronous Bus General Description Features The NM93C46/C46A is 1,024 bits of CMOS nonvolatile, electrically erasable memory available in either 64 16-bit

93C46

Abstract: 93C86 catalyst 93c86 93C56 CAT93C46 CAT93C86 EEPROM 93c66 593c46 93C46 14 soic pin
Contextual Info: H CAT93C46/56/57/66/86 EE GEN FR ALO 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 year data retention

M08A

Abstract: NM93C86ALZ NM93C86LZ
Contextual Info: General Description Features The NM93C86LZ/C86ALZ is 16,384 bits of CMOS non-volatile, electrically erasable memory available in either 1024 16-bit registers NM93C86LZ , or user organized as either 1024 16-bit registers or 2048 8-bit registers (NM93C86ALZ). The user organization is determined by the

C1996

Abstract: M08A NM93C86AL NM93C86ALEM8 NM93C86ALEN NM93C86ALM8 NM93C86ALN NM93C86ALVN
Contextual Info: NM93C86AL 16 384-Bit Serial Interface Low Voltage CMOS EEPROM MICROWIRE TM Synchronous Bus General Description Features The NM93C86AL is 16 384 bits of CMOS nonvolatile electrically erasable memory available user organized as either 1024 16-bit registers or 2048 8-bit registers The user organization is determined by the status of the ORG input The

MIL-STD-167-2

Abstract: Sensonetics downhole sen-1000 downhole pressure transducer "Pressure Transducers" "silicon on sapphire" SEN-1000 SERIES SEN1000 torpedo
Contextual Info: SEN-1000 SUBMINIATURE DOWNHOLE PRESSURE TRANSDUCER/TRANSMITTER ! ! ! ! ! ! ! ! Silicon on Sapphire diaphragm Fast response time <100 microseconds Infinite cycle life @ rated FSPR Abrasion-proof diaphragm All stainless steel 316 or Hastelloy construction Shock and vibration proof design data available

M08A

Abstract: NM93C86A
Contextual Info: NM93C86A 16K-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM93C86A is 16,384 bits of CMOS nonvolatile, electrically erasable memory available in user organized as either 1024 16bit registers or 2048 8-bit registers. The user organization is

Contextual Info: CY93C01/02/04/08/16 1 Kbit, 2 Kbit, 4 Kbit, 8 Kbit, and 16 Kbit x8 or x16 MicroWire Serial EEPROM Features Functional Description • Continuous voltage operation ❐ VCC = 1.65V to 5.5V ■ Internally organized as x8 or x16 ■ Industry standard three wire serial interface

ic sk 383

Contextual Info: IIUICRTRLY5T U m ili S E M I C O N D U C T O R CAT33C108/CAT33C108I 8K-Bit SERIAL E2PROM FEATURES • High Speed Operation: 1MHz Fast Nonvolatile Write Cycle: 5ms Max ■ Low Power CMOS Technology Hardware and Software Write Protection ■ Single 3V Supply

IC 93c46

Abstract: 93c46 LN 93C56 14 pin 93c66 6 93C86 memory 93C46 93C46 IC 93C56 em 93c46 ic circuit chip 8-pin 93C66
Contextual Info: IIIIICRTRLYST m a t i l S E M I C O N D U C T O R CAT93C46/56/66/86 1K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: 1MHz Self-Timed Write Cycle with Auto-Clear ■ Low Power CMOS Technology Hardware and Software Write Protection ■ Wide Operating Voltage Range

93C46SI

Abstract: 93C46 93C56 14 pin 93C46 14 soic pin 93C46 dip 93C86 chip 8-pin 93C66 93C56 93C46S 93C46 tssop
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection ■ 1,000,000 Program/Erase Cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 Year Data Retention ■ Low Power CMOS Technology