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    NM93C46N Price and Stock

    National Semiconductor Corporation NM93C46N

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    Bristol Electronics NM93C46N 37
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    NM93C46N 59
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    NM93C46N 4
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    Fairchild Semiconductor Corporation NM93C46N

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    NM93C46N 152
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    NM93C46N 151
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    NM93C46N 3
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    NM93C46N Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NM93C46N Fairchild Semiconductor 256-/1024-/2048-/4096-Bit Serial EEPROM (MICROWIRE Bus Interface) Original PDF
    NM93C46N Fairchild Semiconductor 1024-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus) Original PDF
    NM93C46N National Semiconductor EEPROM, Serial-Microwire, 1Kbit, 5V Supply, Commercial, DIP, 8-Pin Original PDF
    NM93C46N National Semiconductor 1,024-Bit Serial Interface, Standard Voltage CMOS EEPROM (MICROWIRE Synchronous Bus) Scan PDF
    NM93C46N National Semiconductor 256/1024/2048/4096 Bit Serial EEPROM (MICROWIRE Bus Interface) Scan PDF

    NM93C46N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CS160

    Abstract: AN-1009 CS100 NM93C46 NM93C46N
    Text: AN-1009 EEPROM Endurance Prediction Fairchild Application Note 1009 ENDURANCE convention, Fairchild EEPROM cells are in the “erased” state when they indicate “1” data and written when they indicate “0”. The number of write/erase cycles an EEPROM can withstand


    Original     		PDF AN-1009 NM93C46, CS160 AN-1009 CS100 NM93C46 NM93C46N

    MICROWIRE eeprom interface

    Abstract: NM93C46N C1996 M08A MTC08 NM93C06 NM93C06N NM93C56N NM93C66N c46 national
    Text: NM93C06 C46 C56 C66 256- 1024- 2048- 4096-Bit Serial EEPROM MICROWIRE TM Bus Interface General Description Features The NM93C06 C46 C56 C66 devices are 256 1024 2048 4096 bits respectively of CMOS non-volatile electrically erasable memory divided into 16 64 128 256 16-bit


    Original     		PDF NM93C06 4096-Bit 16-bit MICROWIRE eeprom interface NM93C46N C1996 M08A MTC08 NM93C06N NM93C56N NM93C66N c46 national

    CS160

    Abstract: AN-1009 C1996 CS100 NM93C46 NM93C46N AN-1009 national
    Text: ENDURANCE The number of write erase cycles an EEPROM can withstand before a bit in the memory fails RETENTION The length of time an EEPROM can reliably retain data after programming There are no formal industry standards for determining the techniques or the parameters of endurance claims found in


    Original     		PDF

    VGD15

    Abstract: m1487 b1 ga15 engine wiring diagram M1487 M1489 VGD25 ga22 diode M1489 M1487 sc464 VPAD10
    Text: 1 2 3 4 5 Table of Contents A B Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page Am486 Microprocessor PCI Customer Development Platform 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: 11: 12:


    Original     		PDF Am486 M1489 M1487 -BS16# VGD15 m1487 b1 ga15 engine wiring diagram VGD25 ga22 diode M1489 M1487 sc464 VPAD10

    M28F512-12C3

    Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
    Text: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild


    Original     		PDF 11F-16, M28F512-12C3 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64

    NM93C66N

    Abstract: NM93C06N NM93C46N NM93C56EN C1995 M08A NM93C06 NM93C06M8 NM93C56N NM93C56TM8
    Text: NM93C06 C46 C56 C66 256- 1024- 2048- 4096-Bit Serial EEPROM MICROWIRE TM Bus Interface General Description Features The NM93C06 C46 C56 C66 devices are 256 1024 2048 4096 bits respectively of CMOS non-volatile electrically erasable memory divided into 16 64 128 256 16-bit


    Original     		PDF NM93C06 4096-Bit 16-bit 20-3A NM93C66N NM93C06N NM93C46N NM93C56EN C1995 M08A NM93C06M8 NM93C56N NM93C56TM8

    C46A

    Abstract: c46a1 NM93C46N NM93C46M8 C1996 M08A MTC08 NM93C46 NM93C46A nm93c46am8
    Text: NM93C46 C46A 1 024-Bit Serial Interface Standard Voltage CMOS EEPROM MICROWIRE TM Synchronous Bus General Description Features The NM93C46 C46A is 1 024 bits of CMOS nonvolatile electrically erasable memory available in either 64 16-bit registers (NM93C46) or user organized as either 64 16-bit


    Original     		PDF NM93C46 024-Bit 16-bit NM93C46) NM93C46A) NM93C46 C46A c46a1 NM93C46N NM93C46M8 C1996 M08A MTC08 NM93C46A nm93c46am8

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    VG-469 Reference Design #4

    Abstract: 3941S-A CON40A BSA16 SI9933 bsa11 BLA20 R113B SA13 SA14
    Text: 8 7 6 5 4 3 2 1 VG-469 D D REFERENCE DESIGN #4 TWO SLOT DRIVE BAY IMPLEMENTATION C C 5V ISA VCC ONLY EXTERNAL VOLTAGE SENSE PLUG & PLAY NO DMA B B ISA BUFFERS |LINK |REF4PG2.SCH |REF4PG3.SCH |REF4PG4.SCH |REF4PG5.SCH |REF4PG6.SCH |REF4PG7.SCH |REF4PG8.SCH


    Original     		PDF VG-469 VG-469 469REF SI9933 LT1117 150uF VG-469 Reference Design #4 3941S-A CON40A BSA16 SI9933 bsa11 BLA20 R113B SA13 SA14

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


    Original     		PDF AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257

    EEPROM retention testing

    Abstract: AN-1009 CS100 CS160 NM93C46 NM93C46N
    Text: Fairchild Application Note 1009 Robert Stodieck March 1997 ENDURANCE The number of write/erase cycles an EEPROM can withstand before a bit in the memory fails. A common definition of “failure” is the failure of a single bit in one memory chip. In the case of the NM93C46, a one bit failure in a 1k bit memory. Note that by this criterion 100% failure could mean that only one bit in each memory has failed.


    Original     		PDF NM93C46, an012504 EEPROM retention testing AN-1009 CS100 CS160 NM93C46 NM93C46N

    VG-468

    Abstract: VG-469 SI9953 VG469 DR25 Diode Datasheet header 7x2 80-FFH ACA25 vadem vg-468 AWP-10K
    Text: 8 7 6 5 4 3 2 1 VG-468/469 SD[0.15] SA[0.16] LA[17.23] D A_CADR[0.25] SA[0.16] A_CDATA[0.15] LA[17.23] IRQ3 IRQ4 IRQ5 IRQ7 IRQ9 IRQ10 IRQ11 IRQ12 IRQ14 IRQ15/*RIO A_*REG/*CD1 A_*CE1 A_*CE2 A_*WE A_*OE A_RESET A_*IORD A_*IOWR A_*VCCEN5 A_VPP1EN1 A_VCCEN3


    Original     		PDF VG-468/469 IRQ10 IRQ11 IRQ12 IRQ14 IRQ15/ VG-468 VG-469 SI9953 VG469 DR25 Diode Datasheet header 7x2 80-FFH ACA25 vadem vg-468 AWP-10K

    ali m1489 A1

    Abstract: ALi M5113 A2 ali m1487 B1 m1487 b1 ALI chipset M1489 ALI M1489 acer lcd inverter schematic ali m1487 M1487 lcd acer monitor circuit diagram
    Text: Am486 Microprocessor PCI Customer Development Platform User’s Manual Order #22408A Am486® Microprocessor PCI Customer Development Platform User’s Manual 1998 by Advanced Micro Devices, Inc. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or


    Original     		PDF Am486® 2408A year-2000 ali m1489 A1 ALi M5113 A2 ali m1487 B1 m1487 b1 ALI chipset M1489 ALI M1489 acer lcd inverter schematic ali m1487 M1487 lcd acer monitor circuit diagram

    TOSHIBA CR2032

    Abstract: ali m1489 c86 sot23 74F03 RN7 SOT23 74f06d RC0805 M1487 ali m5042 TIL311
    Text: Am486PCI_21_BOM.xls Am486 Microprocessor PCI Customer Development Board Revised: Friday, December 18, 1998 Revision: 2.1A C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials


    Original     		PDF Am486PCI Am486 CPLCC44 74ABT244D M5113A TFDS6000D LTC1349CG Am79C972KC LXT970QC MC33269DT-3 TOSHIBA CR2032 ali m1489 c86 sot23 74F03 RN7 SOT23 74f06d RC0805 M1487 ali m5042 TIL311

    10393

    Abstract: 10393 8 pin 10393 datasheet DS010751 NM93C66M8 M08A MTC08 NM93C06-NM93C66
    Text: General Description Features The NM93C06/C46/C56/C66 devices are 256/1024/2048/ 4096 bits, respectively, of CMOS non-volatile electrically erasable memory divided into 16/64/128/256 16-bit registers. They are fabricated using Fairchild Semiconductor’s floating-gate CMOS process for high reliability and low


    Original     		PDF NM93C06/C46/C56/C66 16-bit dur85 ds010751 10393 10393 8 pin 10393 datasheet NM93C66M8 M08A MTC08 NM93C06-NM93C66

    L1042

    Abstract: NM93C46N C46A1 transistor 79t C46A M08A NM93C46 NM93C46A NM93C46M8 L381
    Text: September 1995 Semiconductor N M 9 3C 46/C 4 6A 1,024-Bit Serial Interface, Standard V oltage CM OS EEPROM M IC R O W IR E tm Synchronous Bus General Description Features The NM93C46/C46A is 1,024 bits of CMOS nonvolatile, electrically erasable memory available in either 64 16-bit


    OCR Scan     		PDF NM93C46/C46A 024-Bit NM93C46/C46A 16-bit NM93C46) NM93C46A) NM93C46/ L1042 NM93C46N C46A1 transistor 79t C46A M08A NM93C46 NM93C46A NM93C46M8 L381

    ic 8pin C66

    Abstract: NM93C46EM8 93c06c ic 8pin C56
    Text: NM93C06/C46/C56/C66 National Semiconductor NM93C06/C46/C56/C66 256-/1024-/2048-/4096-Bit Serial EEPROM MICROWIRE General Description Features The NM93C06/C46/C56/C66 devices are 256/1024/ 2048/4096 bits, respectively, of CMOS non-volatile electri­ cally erasable memory divided into 16 /64/1 28/2 56 16-bit


    OCR Scan     		PDF NM93C06/C46/C56/C66 NM93C06/C46/C56/C66 256-/1024-/2048-/4096-Bit 16-bit NM93C56 NM93C66 NM93C06 NM93C46 TL/D/10751-9 ic 8pin C66 NM93C46EM8 93c06c ic 8pin C56

    Untitled

    Abstract: No abstract text available
    Text: EEPROM Endurance „ _fa ir c h ild Application Note 1009 P | *0 r l| f*f| Q n s e m ic d n d u c id r t u convention, Fairchild EEPROM cells are in the “erased" state when they indicate “1” data and written when they indicate “0” . ENDURANCE The number of write/erase cycles an EEPROM can withstand


    OCR Scan     		PDF NM93C46,

    Untitled

    Abstract: No abstract text available
    Text: August 1996 S em iconductor N M 93C06/C46/C56/C66 256-/1024-/2048-/4096-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM93C06/C46/C56/C66 devices are 256/1024/ 2048/4096 bits, respectively, of CMOS non-volatile electri­ cally erasable memory divided into 16/64/128/256 16-bit


    OCR Scan     		PDF 93C06/C46/C56/C66 256-/1024-/2048-/4096-Bit NM93C06/C46/C56/C66 16-bit

    c46a1

    Abstract: 024-Bit NM93C46EM8 AAID
    Text: December 1995 Semiconductor NM93C46/C46A 1,024-Bit Serial Interface, Standard Voltage CMOS EEPROM MICROWIRE tm Synchronous Bus General Description Features The NM93C46/C46A is 1,024 bits o f CMOS nonvolatile, electrically erasable memory available in either 64 16-bit


    OCR Scan     		PDF NM93C46/C46A 024-Bit 16-bit NM93C46) NM93C46A) NM93C46/ c46a1 NM93C46EM8 AAID

    ic 8pin C66

    Abstract: 93c06 93c06 national semiconductor 93C06 EN
    Text: NM93C06/C46/C56/C66 National Semiconductor NM 93C06/C46/C56/C66 256 -/10 24 -/2048-/4096-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM93C06/C46/C56/C66 devices are 256/1024/ 2048/4096 bits, respectively, of CMOS non-volatile electri­


    OCR Scan     		PDF NM93C06/C46/C56/C66 93C06/C46/C56/C66 -/2048-/4096-Bit NM93C06/C46/C56/C66 16-bit TL/F/10144-9 ic 8pin C66 93c06 93c06 national semiconductor 93C06 EN

    M08A

    Abstract: MTC08
    Text: NM93C06/C46/C56/C66 National Semiconductor NM93C06/C46/C56/C66 2 56-/1024-/2048-/4096-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM93C06/C46/C56/C66 devices are 256/1024/ 2048/4096 bits, respectively, of CMOS non-volatile electri­


    OCR Scan     		PDF NM93C06/C46/C56/C66 256-/1024-/2048-/4096-Bit NM93C06/C46/C56/C66 16-bit TL/D/10751 TL/D/10751-8 TL/D/10751-9 TL/D/10751-10 TL/D/10751-11 M08A MTC08