1108B Search Results

Contextual Info: 1108B Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1

063 8pin

Abstract: HN58X2408FPI HN58X2408TI HN58X2416FPI HN58X2416TI HN58X2432FPI HN58X2432TI HN58X2464FPI HN58X2464TI Hitachi DSA00358
Contextual Info: HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I Two-wire serial interface 8k EEPROM 1-kword x 8-bit /16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit) ADE-203-1108B (Z) Rev. 2.0 Nov. 26, 1999 Description HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable

Hitachi DSAUTAZ006

Contextual Info: HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I Two-wire serial interface 8k EEPROM 1-kword x 8-bit /16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit) ADE-203-1108B (Z) Rev. 2.0 Nov. 26, 1999 Description HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable

1108b

Abstract: ac 187 pin configuration 1102B 1102FB 1102UFB 1104B 1104FB 1106B 1106FB 1108FB
Contextual Info: b3E ]> •ìSmfiS4 GGGOMflfl TS4 SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY « V i l i 1102B 1104B 1106B 1108B 1110B 1102FB 1104FB 1106FB 1108FB 1110FB 1102UFB 1104UFB 1106UFB 1108UFB 1110UFB AC VpwM = 200-1000V lF = 1.4-1.5A * Assemblies available with

ac 187 pin configuration

Contextual Info: SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY 1102B 1104B 1106B 1108B 1110B 1102FB 1104FB 1106FB 1108FB 1110FB 1102UFB 1104UFB 1106UFB 1108UFB 1110UFB AC V RWM = 2 0 0 - 1000V = I 1.4-1.5A Assemblies available with JAN, JANTX, or JA N TXV discrete diodes. Consult

EDJ1104BASE

Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1104BASE 256M words x 4 bits 1108BASE (128M words × 8 bits) EDJ1116BASE (64M words × 16 bits) Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BASE)  16M words × 8 bits × 8 banks (1108BASE)

SCK 104

Abstract: At25xxx AVR320 1108B eeprom At25xxx 25XXX AT25010 AT90S1200 atmel 25xxx
Contextual Info: AVR320: Software SPI Master Features • • • • • • • • • Up to 444K Bytes/Sec Throughput @ 10 MHz Directly Supports Large Block Writes Easily Expandable for Multiple SPI Slaves Operates in SPI Mode 0 16-bit Data, Easily Modified to 8-bit Operation

EDJ1104BASE

Abstract: EDJ1108BASE Hight Air Temperature Switch T1117 ELPIDA DDR2 SDRAM
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BASE 256M words x 4 bits 1108BASE (128M words × 8 bits) EDJ1116BASE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization ⎯ 32M words × 4 bits × 8 banks (EDJ1104BASE)

edj1108bbse

Abstract: EDJ1116BBSE
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BBSE 256M words x 4 bits 1108BBSE (128M words × 8 bits) EDJ1116BBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BBSE)

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BASE 256M words x 4 bits 1108BASE (128M words × 8 bits) EDJ1116BASE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization ⎯ 32M words × 4 bits × 8 banks (EDJ1104BASE)

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BBSE 256M words x 4 bits 1108BBSE (128M words × 8 bits) EDJ1116BBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BBSE)

Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1104BASE 256M words x 4 bits 1108BASE (128M words × 8 bits) EDJ1116BASE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BASE)  16M words × 8 bits × 8 banks (1108BASE)

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BBSE 256M words x 4 bits 1108BBSE (128M words × 8 bits) EDJ1116BBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BBSE)

EDJ1104BASE

Abstract: DDR3 layout TI EDJ1108 EDJ1116BASE-DJ-E EDJ1108BASE ddr3 1600 timing Design Guide for DDR3-1066 78 ball fbga DDR3 DIMM SPD JEDEC edj1104
Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1104BASE 256M words x 4 bits 1108BASE (128M words × 8 bits) EDJ1116BASE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BASE)  16M words × 8 bits × 8 banks (1108BASE)

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BBSE 256M words x 4 bits 1108BBSE (128M words × 8 bits) EDJ1116BBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BBSE)

OD108

Abstract: ELPIDA DDR3 User
Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1104BBSE 256M words x 4 bits 1108BBSE (128M words × 8 bits) EDJ1116BBSE (64M words × 16 bits) Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BBSE)  16M words × 8 bits × 8 banks (1108BBSE)

EDJ1116BBSE

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BBSE 256M words x 4 bits 1108BBSE (128M words × 8 bits) EDJ1116BBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BBSE)

ELPIDA DDR3 User

Abstract: ELPIDA how to use ddr3
Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1104BBSE 256M words x 4 bits 1108BBSE (128M words × 8 bits) EDJ1116BBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BBSE)  16M words × 8 bits × 8 banks (1108BBSE)

Contextual Info: 1108B301 Product Details C om m u n ication s / S ignal PC Board Re lays Converted to EU RoHS/ELV Compliant Statement of Compliance Previous 1 . [11] 12 13 14 15 . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector

ECN-0953

Abstract: ive 1084
Contextual Info: DRAWING MADE IN THIRD ANOLE PR O JEC TIO N T H IS DRAWING 15 UN PU BLISH ED . LOC ,19 RELEASED FOR P U B L IC A T IO N DIST R E V IS IO N S AR 39 COPYRIGHT 19 BY A M P INCORPORATED,HARRISBURG,PA. ALL INTERNATIONAL RIGHTS RESERVED. A M P PRODUCTS MAY BE COVERED BY U.S. AND FOREIGN PATENTS AND/OR PATENTS PENDING.

ELPIDA DDR3 User

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BASE 256M words x 4 bits 1108BASE (128M words × 8 bits) EDJ1116BASE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BASE)

ELPIDA DRAM selection guide

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BASE 256M words x 4 bits 1108BASE (128M words × 8 bits) EDJ1116BASE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BASE)