J02015A
Abstract: LT4217 J02015 CD6150 0414T
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?ES4 □ 0^41*14 -33r( MOTOROLA T • 110Tb CD6150 (See LT4217) ■ SEMICONDUCTOR TECHNICAL DATA The RF Line UHF P o w er T ran sisto r The J02015A is an internally matched NPN silicon UHF power transistor. Its multicell design allows optim um heat dissipation and operating efficiency. A slotted-grid finger
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J02015A
CD6150
LT4217)
J02015A
LT4217
J02015
CD6150
0414T
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MRF545
Abstract: MRFC545 RF545
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • fc.3fc.72SH □ □ ' Ì H 7 4 7 MOTOROLA 3 ■ 110Tb T 3 B - n SEMICONDUCTOR TECHNICAL DATA MRF545 MRFC545 The RF Line PIMP Silicon High Frequency Transistors >C = -4 0 0 mA d e s ig n e d fo r h ig h - fr e q u e n c y a n d m e d iu m a n d h ig h re s o lu tio n c o lo r v id e o d is p la y
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110Tb
MRF545
MRFC545
IS22I
MRFC545
RF545
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mosfet J 3305
Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
Contextual Info: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,
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MTP7P06
b3b7254
0CHfl703
mosfet J 3305
221A-06
72SM
AN569
MTP7P06
TMOS Power FET
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pwm6
Abstract: S12XOSCLCPV1 MC9S12XDP QFP-112 MARKING code RAf S12ATD10B8CV3 equivalent S12X9SECV2 MC9S12XDT MC9S12XDT512CFV 9S12x
Contextual Info: MC9S12XDP512 MC9S12XDT512 MC9S12XDT384 Data Sheet HCS12X Microcontrollers MC9S12XDP512 Rev. 2.12 10/2005 freescale.com MC9S12XDP512 Data Sheet covers MC9S12XDT384 & MC9S12XDT512 MC9S12XDP512 Rev. 2.12 10/2005 To provide the most up-to-date information, the revision of our documents on the World Wide Web will be
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MC9S12XDP512
MC9S12XDT512
MC9S12XDT384
HCS12X
MC9S12XDP512
MC9S12XDT384
MC9S12XDT512
pwm6
S12XOSCLCPV1
MC9S12XDP
QFP-112
MARKING code RAf
S12ATD10B8CV3 equivalent
S12X9SECV2
MC9S12XDT
MC9S12XDT512CFV
9S12x
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603al
Abstract: WW-C-581 TB cable lug catalogue bitumastic chase nipple EMT CONDUIT BITUMASTIC TRIB-125 141SL EMT CONDUIT A-A-50553
Contextual Info: T&B Conduit Fittings General Information Thomas & Betts… The Complete Product Line Since the turn of the century, Thomas & Betts has been a recognized leader in electrical fittings. Industry standards such as Chase Nipples and Erickson® Couplings were
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MC9S12XDT384
Abstract: tc 9152 p freescale superflash
Contextual Info: MC9S12XDP512 MC9S12XDT512 MC9S12XDT384 Data Sheet HCS12X Microcontrollers MC9S12XDP512 Rev. 2.12 10/2005 freescale.com MC9S12XDP512 Data Sheet covers MC9S12XDT384 & MC9S12XDT512 MC9S12XDP512 Rev. 2.12 10/2005 To provide the most up-to-date information, the revision of our documents on the World Wide Web will be
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MC9S12XDP512
MC9S12XDT512
MC9S12XDT384
HCS12X
MC9S12XDP512
MC9S12XDT384
MC9S12XDT512
tc 9152 p
freescale superflash
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GP131
Abstract: 13F-1 MRW2015
Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b 3 b 7 2 5 4 O O lS O fll T-: MOTOROLA ■ SEMICONDUCTOR 7 ■ flOTb 0 1 a TECHNICAL DATA MRW2000 Series The RF Line M icrow ave Pow er Transisto rs 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS . . . designed p rim arily fo r large-signal output and d rive r am p lifier stag es in th e 1 to
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MRW2000
24GHz
GP131
13F-1
MRW2015
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F-501
Abstract: F501 f501m
Contextual Info: I MOTOROLA SC XSTRS/R 4bE D F b3b7254 0CH4712 b I flOTb MOTOROLA • SEMICONDUCTOR MRF501 MRF502 TECHNICAL DATA The R F Line HIGH FREQUENCY TRANSISTORS NPN SILICON HIGH-FREQUENCY TRANSISTORS NPN SILICON . . . designed p r im a r ily f o r use in high-gain , lo w -n o is e a m p lifie r,
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b3b7254
0CH4712
MRF501
MRF502
F-501
F501
f501m
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Motorola transistor 388 TO-204AA
Abstract: motorola mosfet BD357 Bd 357
Contextual Info: nOTOROLA SC XSTRS/R F bftE J> b3t.72SH 00^0^03 7G1 •110Tb m MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM25IM10 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate TM O S POWER FET 25 AMPERES R 0S (0n) = 0 075 O H M
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110Tb
MTM25IM10
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
Motorola transistor 388 TO-204AA
motorola mosfet
BD357
Bd 357
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MTP15N05E
Abstract: 221A-06 AN569
Contextual Info: M O T O R O L A SC X S T R S / R F bflE D • b 3 b ? 2 S 4 G G [ifl752 2ßl MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP15N05E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sis to r N-Channel Enhancem ent-Mode Silicon G ate
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110Tb
MTP15N05E
MTP15N05E
221A-06
AN569
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MRF911
Abstract: LA01 IS21I2 case 317-01
Contextual Info: MOTOROLA SC XSTRS/R F 4bE I> b3b?254 M OTOROLA O tm m i T -3 1 - l° l • SEMICONDUCTOR TECHNICAL DATA MRF911 The R F L in e fT * 5.0 GHz 9 30 mA HIG H FREQUENCY TRANSISTOR NPN SILIC O N HIG H FREQUENCY TRANSISTO R NPN SILICON . . . designed primarily for use in high-gain, low-noise tuned and
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110Tb
MRF911
MRF911
LA01
IS21I2
case 317-01
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100TB
Abstract: ptc c 250q ptc 100 thermistor terminal colour coding ptc thermistor 10k PTC 1K sensor PTC lead disc thermistor TNF-20 150TB 070TB 090TB
Contextual Info: 61 PTC THERMISTORS: TYPES YC, YD, YF, YG INDUSTRIAL / CONSUMER Indirect Over-Temperature Protection DESCRIPTION These PTC disc thermistors have been designed to detect excessive temperatures inside industrial equipment, especially within windings of electromagnetic equipment. By
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1000Q
Tnf-20
Tnf-20
Tnf-10
Tnf-10
100TB
ptc c 250q
ptc 100 thermistor terminal colour coding
ptc thermistor 10k
PTC 1K sensor
PTC lead disc thermistor
150TB
070TB
090TB
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MRF5174
Abstract: IR 21025
Contextual Info: 4bE D M O T O R O L A SC X S T R S / R F b3b?2S4 OOISQM? 5 IMOTfe MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 2 W —400 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 260*600 MHz frequency range.
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28-Volt.
400-MHz
MRF5174
IR 21025
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omron relay G2R-2 8 pin 12V DC
Abstract: Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G
Contextual Info: ND3% BASE1 XXXX5998-1631-1-P 1631 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 08:29 TS:TS date TS time RELAYS, SOLENOIDS & CONTACTORS Go Online for Product Availability AUTOMOTIVE RELAYS DG34 SERIES AUTOMOTIVE INDUSTRIAL POWER RELAYS 60-80A AUTOMOTIVE RELAYS CONT.
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277VAC,
30VDC
10VAC/DC
250VAC
10million
0-80A
DG34-1021-36-1012-F
59PIARQ
S18UUA
S18UUAQ
omron relay G2R-2 8 pin 12V DC
Tyco 3604 relay
krp power source sps 6360
SRD 12VDC SL C
data 8873 64 pin colour tv ic
TTK SG 2368
transistor DK qe smd
eaton T85 rotary Switch
PH ON 823 m 8645
ic MB 16651 G
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2C3866AHV
Abstract: chip die npn transistor 2C3866A
Contextual Info: b3b72SH O O ^ f e ? 7 4bE I> •H0TbT:3 l*3 3 Î10T0R0LA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 2C3866AHV Chip NPN Silicon High-Frequency Transistor u m Discrete Military Operation . .designed for amplifier and oscillator applications. Suitable for use as output, driver or
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b3b72SH
10T0R0LA
2C3866AHV
71TESTS
chip die npn transistor
2C3866A
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LU-12 relay
Abstract: 3B2S diode rj A 0412 MOSFET 369A-10 AN569 J360 MTD2N20 MTD2N20-1 MTD2IM20
Contextual Info: MOTOROLA SC XSTRS/R F bfiE D fl OTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2N20 Designer's Data Sheet Pow er Field E ffe ct T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface Mount or Insertion Mount TMOS POWER FETs 2 AMPERES RDStonl = 1 5 OHMS
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MRF648
Abstract: LT 2807 mrf648 motorola
Contextual Info: MOTOROLA SC XSTRS/R F 4bE P • b3b?2S4 GGSMñSñ 3 «110Tb MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA The RF Line 60 W - 470 MHz CO NTRO LLEDQ RF POWER TRANSISTO R NPN SILICO N RF POWER TRANSISTO R NPN SILICO N designed fo r 12 5 V o lt U H F large signal a m p lifie r a p p lic a tio n s in
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110Tb
b3b72S4
MRF648
MRF648
LT 2807
mrf648 motorola
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