72SM Search Results

md7001

Contextual Info: MOTOROLA SC XSTRS/R F T -tf 15E D | t3t,72SM OQâbSSfl 4 | M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc Collector Current — Continuous >C 600 mAdc Total Device Dissipation @ T/y = 25°C

MD918AB

Contextual Info: MOTGRCLA SC 12E D I b3t,72SM DQ0tS13 XSTRS/R F MD918A MD918B M A X I M U M R A T IN G S Sym bol Value Unft Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCES 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Collector Current — Continuous 'c 50 mAdc

DM 0265 R pin EQUIVALENT

Abstract: MRF2005 724 motorola NPN Transistor
Contextual Info: lEE D I MOTOROLA fc.3L.72SM 0 0 0 0 0 4 0 MOTOROLA SC T-33-0? fi | XSTRS/R F SEMICONDUCTOR TECHNICAL DATA MRF2005M The RF Line S .O W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER TR A N S IS T O R . . . designed fo r Class B and C co m m o n b ase broadband am p lifie r

IR 92 0151

Abstract: MJ12002 MJ-12002 TC204A 4229PL00-3C8
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | fc.3t.72SM GGflSQflfi T f T-J3-/J MOTOROLA SEMICONDUCTOR MJ12002 TECHNICAL DATA D e s ig n e rs D a ta S h e e t 2.5 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR 1500 VOLTS 76 WATTS . . . specifically designed for use in large screen color deflection

MOTOROLA MJ4035

Abstract: MJ4032 MJ4030 MOTOROLA MJ4035 MJ4032 MOTOROLA TRANSISTOR BC 187 MJ4033 nd 043 transistor J4031 MJ4030
Contextual Info: MOTOROLA SC Í X S T R S / R F> 6367254 MOTOROLA SC Tb CXSTRS/R F D eT | t.3L.72SM OOfiGTDO 3 f 96D 8 0 9 0 0 — - r T - J 3 - J 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 16 AMPERE MEDIUM-POWER C O M PLEM EN TA RY

mosfet J 3305

Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
Contextual Info: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,

72SM

Abstract: UFT7005SM UFT7010SM UFT7015SM UFT7020SM UFT70SM UFT7120SM UFT7130SM UFT7140SM UFT7150SM
Contextual Info: U ltra fa s t Recovery Modules UFT70SM, 71 SM & 72SM Dim. Inches N 2 PLCS. - Minimum m m 1 i m i 9 PMS «| * ot .200 - I I- SM3 & SM4 (— *3— | T T T H SM1 •M & SM2 1 4 m m m -tH i > SM5 & SM6 TYP. PIN CONFIGURATION PlP. PIN CONFIGURATIOH FOR SMI. SM3. k SMS

Contextual Info: MOTOROLA SC 12E 0 | b3fc,72SM OGÖbSlä H | XSTRS/R F M A X IM U M R A T IN G S Sym bol V a lu e U n it Collector-Em itter V olta g e R ating V C EO 15 Vdc C ollector-E m itter Voltag e V C ER 20 Vdc Collector-B ase V olta g e VCBO 40 Vdc Em itter-Base V oltag e

72sm

Abstract: UFT7005SM UFT7010SM UFT7015SM UFT7020SM UFT70SM UFT7120SM UFT7130SM UFT7140SM UFT7250SM
Contextual Info: biisasE oaaoHsa t u «moo _ T ^ - 3 - ^ - 0 ^ SIE D NICROSFMI CORP-COLO U ltra fa s t Recovery Modules UFT70SM, 71SM & 72SM Dim. Inches N 2 PICS. - m i i Irmi w MT jLG A1 1.490 A2 1.020 A3 .6 9 5 B .110 .027 C D .100 E .3 5 0 F .015 G .6 9 5

MTP10N06E

Abstract: 221A-04 72SM AN569 MTM10N06E evod
Contextual Info: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T | 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s

MRF2003

Abstract: RF2005 MRF2005
Contextual Info: 1EE D I b3fc.72SM MOTOROLA MOTOROLA SC 0000020 XSTRS/R ? | T 'iS - o C ? F SEMICONDUCTOR MRF2003 MRF2003B TECHNICAL DATA The R F Line 3.0 W 2 GHz MICROWAVE POWER TRANSISTORS NPN SILICON MICROWAVE POWER TRANSISTORS NPN S IL IC O N . . . designed fo r Class B and C am plifie r or oscillator applications

72sm

Abstract: UFT7015SM UFT7020SM UFT7120SM UFT7130SM UFT7140SM UFT7150SM UFT7250SM UFT7260SM UFT7270SM
Contextual Info: Ultrafast Recovery Modules UFT7QSM, 71 SM & 72SM m -A 1 - 3 PINS 1 u.4t-t t 2 eq sp at .200 3 I \— I G Minimum IW 'è irm i I 1 Dim. Inches -A 2 - -K - N 2 PLCS.- 2 A1 1.490 A2 1.020 A3 .6 95 B .110 .0 27 C D .100 E .3 50 F .015 G .695 H .0 88 J .240

dc5020

Contextual Info: Ultrafast Recovery Modules UFT70SM, 71SM & 72SM A1 Dim. Inches A2 K 1 F 1 2 2 3 E 3 1 2 3 Common Cathode L M SM3 & SM4 3 PINS eq sp at .200 G A3 1 2 3 A=Common Anode J C Millimeter Minimum Maximum Minimum Maximum Notes N 2 PLCS. SM1 & SM2 B D H 1 2 3 B D

PM75RHA060

Abstract: 2 anode igbt inverter circuit diagram BP107 DDD5704 circuit diagram of 600 volt UPS 74005 220 volt ac to 12 volt dc inverter 326t C160ST powerex kt
Contextual Info: POldEREX I NC _ SIE D • 72SMb21 OQOSbTb T7M ■ P M 7 5 R H A PRX 6 T ^ S y - ^ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ¡ n t B ll im O C P ^ ^ - 3 M o d u l B S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e phase + Brake

MJ15FG45

Contextual Info: M O T O R O L A SC •CXSTRS/R F> & Q D e | t3t,72SM GGTbflSa T ■ = ■ Order this data sheet by MJ15FG45/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M P N Silicon Pow er Transistor IVSodule Energy M anagem ent Series T h e s e D a rlin g to n tra n s is to rs are d esig n e d fo r ind u strial service u n d er practical o p e ra t­

N493

Abstract: basf 100cjd
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | b3fc,72SM O G ä M m M T | T- 33-/3 MOTOROLA BUX47 BUX47A SEMICONDUCTOR TECHNICAL DATA 9 AM PERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 400 AND 450 V O LT S BVCEO 160 WATTS 850 * 1000 V (BVCEX)

72SM

Abstract: UFT7010SM UFT7015SM UFT7020SM UFT70SM UFT7120SM UFT7130SM UFT7140SM UFT7150SM UFT7250SM
Contextual Info: Ultrafast Recovery Modules UFT70SM, 71SM & 72SM A1 Dim. Inches A2 K N 2 PLCS. Millimeter Minimum Maximum Minimum Maximum Notes 1 F 1 2 2 3 E 3 L M SM3 & SM4 3 PINS eq sp at .200 G A3 J C SM1 & SM2 B D H 1 2 3 B D SM5 & SM6 TYP. PIN CONFIGURATION TYP. PIN CONFIGURATION

Contextual Info: MOT OR OL A SC -CXSTRS/R 6367254 F> Tb MOTOROLA SC DE | CXSTRS/R F b3t,72SM 96D 0GÛ235S 82355 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage v CEO 20 Vdc Collector-Base Voltage V CBO 25 Vdc Emitter-Base Voltage v EBO 4.0 Vdc Collector C u rren t— Continuous

trw62602

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3t,72SM 0000410 =i | T-X1~0\ MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T R W 62602 The RF Line M ic r o w a v e P o w e r O sc illa to r T ra n sisto r M ICROW AVE POW ER OSCILLATOR T RAN SIST O R . designed for use as power oscillators at frequencies to 3 GHz with guaranteed output

35n05

Abstract: 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N TH35N05
Contextual Info: MOTOROLA SC XSTRS/R IME D § F fc.3i.72SM G O û T O l M| MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TH35N 05 M TH35N 06 M TM 35N 05 M TM 35N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed fo r high speed power

Contextual Info: MOTOROLA SC ' XSTRS/R F 15E 0 | b3t.72SM GGäbSl? 1 | M AXIMUM RATINGS Symbol Value Collector-Emitter Voltage VcEO 20 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter*Base Voltage V EBO 5.0 Vdc ic 200 mAdc Rating Collector Current — Continuous Unit One Die

72SM

Abstract: UFT7005SM UFT7010SM UFT7015SM UFT7020SM UFT70SM UFT7120SM UFT7130SM UFT7140SM UFT7150SM
Contextual Info: U lt r a f a s t Recovery Modules UFT70SM, 71 SM & 72SM -A I— -K - N 2 PLCS. • m M jH 3 pws n «p ot ,200 I Dim. in c h e s am W » L K A1 1.490 A2 1.020 A 3 .6 9 5 B .110 .0 2 7 C D .100 E .3 5 0 F .015 G .6 9 5 H .0 8 8 J .2 4 0 K 1.180 L .2 3 0 M

irf510

Abstract: transistor irf510 irf510 Motorola IRF511 IRF 511 Transistor motorola 513
Contextual Info: MOTOROLA SC X S T R S /R F I b3b?2S4 1ME D MOTOROLA QüäTböl 7 I IRF510 IRF511 IRF512 IRF513 •i SEMICONDUCTOR TECHNICAL DATA Part Number V DS N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR IRF510 100 V rDS on 0.6 n IRF511 60 V

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty