110A 55V Search Results

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA110N055T2 IXTP110N055T2 VDSS ID25 = 55V = 110A Ω ≤ 6.6mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55

UF3205L

Abstract: 110A 55V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial

IRF1010

Abstract: IRF3205P
Contextual Info: PD-94791B IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

uf3205

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial applications at power

AN-994

Abstract: IRF3205 IRF3205L
Contextual Info: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†

IRF3205 equivalent

Abstract: IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L
Contextual Info: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†

IRF3205S

Abstract: IRF3205 irf 146 transistor 107A equivalent irf320 AN-994 IRF3205L IRF530S
Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

AN-994

Abstract: IRF3205L IRF3205S IRF530S
Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 55V / 110A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY110N06T 55V, RDS(ON)=5.5mW@VGS=10V, ID=30A

IRF3205 application

Abstract: irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2
Contextual Info: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†

IRF3205

Abstract: IRF3205 IR IRF3205 E irf737
Contextual Info: PD - 9.1279D IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A… S Description Fifth Generation HEXFETs from International Rectifier

irf3205 DRIVER

Contextual Info: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International

f1010e

Abstract: IRFP064N
Contextual Info: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A† S Description Fifth Generation HEXFETs from International Rectifier

IRF3205SPBF

Abstract: AN-994 IRF3205L IRL3103L IRF3205LPbF
Contextual Info: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A…

irf3205pbf

Abstract: IRF3205#PBF IRF32
Contextual Info: PD-94791A IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

IRF1010

Contextual Info: PD-94791 IRF3205PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A S Description Advanced HEXFET® Power MOSFETs from International

SSF*5508

Abstract: SSF5508 57AVDD pn junction diode 110A 55V 68A diode N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Contextual Info: SSF5508 Feathers: ID =110A „ Advanced trench process technology BV=55V „ Ultra low Rdson, typical 6mohm Rdson=4.5 mΩ typ. „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high

Contextual Info: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFETÆ Power MOSFET D VDSS = 55V RDS on = 8.0m! G ID = 110A…

MTN3205E3

Abstract: marking 66a IAS-100 N3205
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN3205E3 Spec. No. : C444E3 Issued Date : 2009.05.25 Revised Date : Page No. : 1/8 BVDSS RDSON Max ID 55V 8 mΩ 110A Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

mosfet 3205

Abstract: 3205 MOSFET lbf 3205 mosfet vds25v ID 62A vds25v ID 62A
Contextual Info: E HEXFET Advanced Process Technology 3205 Power MOSFET VDSS = 54 V Ultra Low On-Resistance Dynamic dv/dt Rating ID25 = 110A 175°C Operating Temperature Fast Switching Fully Avalanche Rated RDS ON = 0.009 Ω Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD-94791B IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

UMOS-4

Abstract: 25V 55A to-252
Contextual Info: NP Series Super-Low-RDS ON MOSFETs Description With innovative fabrication process and advanced packaging, the NP Series MOSFETs feature super-low on-resistance—among the lowest in the industry in their class. With VDSS rated at 30, 40 and 55V, along with a current spec of 110A, the three members of

f1010e

Abstract: IRFP064N irf3205 DRIVER for IRF3205 IRF3205 IRF3205 equivalent IRFP064N equivalent 11V16 Mosfet IRFP064N
Contextual Info: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A† S Description Fifth Generation HEXFETs from International Rectifier