IRF737 Search Results

f 1010

Abstract: 7105 irf1010
Contextual Info: PD - 95947 IRF737LCPbF • Lead-Free www.irf.com 12/20/04 IRF737LCPbF 2 www.irf.com IRF737LCPbF www.irf.com 3 IRF737LCPbF 4 www.irf.com IRF737LCPbF www.irf.com 5 IRF737LCPbF 6 www.irf.com IRF737LCPbF www.irf.com 7 IRF737LCPbF TO-220AB Package Outline TO-220AB Part Marking Information

Contextual Info: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve

Contextual Info: PD - 95947 IRF737LCPbF • Lead-Free 12/20/04 Document Number: 91050 www.vishay.com 1 IRF737LCPbF Document Number: 91050 www.vishay.com 2 IRF737LCPbF Document Number: 91050 www.vishay.com 3 IRF737LCPbF Document Number: 91050 www.vishay.com 4 IRF737LCPbF Document Number: 91050

IRF737LC

Abstract: SiHF737LC SiHF737LC-E3 IRF737
Contextual Info: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: PD - 95947 IRF737LCPbF • Lead-Free 12/20/04 Document Number: 91050 www.vishay.com 1 IRF737LCPbF Document Number: 91050 www.vishay.com 2 IRF737LCPbF Document Number: 91050 www.vishay.com 3 IRF737LCPbF Document Number: 91050 www.vishay.com 4 IRF737LCPbF Document Number: 91050

84Fo

Abstract: IRF7379 EIA48
Contextual Info: PD - 91625 IRF7379 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 30V -30V RDS on 0.045Ω 0.090Ω

Contextual Info: International S Rectifier PD 91314 IRF737LC preliminary HEXFET^ Power MOSFET • Reduced Gate Drive Requirement • Enhanced 30V V qs Rating • Reduced Ciss. Coss> C rss • Extrem ely High Frequency Operation • Repetitive Avalanche Rated Voss = 300V RDS on =

MS-012AA

Contextual Info: PD - 95300 IRF7379PbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 30V -30V

IRF1010

Contextual Info: IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)

IRF737LCL

Abstract: f1010h
Contextual Info: PD - 9.1314 International M Rectifier IRF737LC PRELIMINARY HEXFET Power MOSFET • • • • • Reduced Gate Drive Requirement Enhanced 30V Vqs Rating Reduced Qss, Coss, Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V ^ D S o n =

Transistor Mosfet N-Ch 30V

Contextual Info: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6   '

Contextual Info: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET

IRF1010

Abstract: TO-220 JEDEC b 0316 marking 221 part marking ab Package outline To220ab JEDEC OUTLINE marking 1145 647 marking
Contextual Info: IRF737LC Package Outline HEXFET TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)

irf1010

Abstract: marking 221
Contextual Info: IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)

Contextual Info: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1

Contextual Info: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 300 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 17 Qgs (nC) 4.8 Qgd (nC) 7.6 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: PD - 96089 IRF7379IPbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 30V -30V

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω

Contextual Info: PD - 96089 IRF7379IPbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description VDSS N-Ch

irf MOSFET p-CH

Contextual Info: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.