110N06NS Search Results
110N06NS Price and Stock
Infineon Technologies AG BSC110N06NS3GATMA1MOSFET N-CH 60V 50A TDSON-8 |
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BSC110N06NS3GATMA1 | Cut Tape | 11,041 | 1 |
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BSC110N06NS3GATMA1 | Reel | 8 Weeks | 5,000 |
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BSC110N06NS3GATMA1 | 69,288 |
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BSC110N06NS3GATMA1 | Bulk | 1 |
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BSC110N06NS3GATMA1 | 60 |
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BSC110N06NS3GATMA1 | 2,617 | 1 |
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BSC110N06NS3GATMA1 | 1 |
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BSC110N06NS3GATMA1 | Reel | 10,000 | 5,000 |
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BSC110N06NS3GATMA1 | Cut Tape | 19,780 | 0 Weeks, 1 Days | 5 |
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BSC110N06NS3GATMA1 | 9 Weeks | 5,000 |
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BSC110N06NS3GATMA1 | 63,885 |
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BSC110N06NS3GATMA1 | 22,500 |
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Infineon Technologies AG BSZ110N06NS3GATMA1MOSFET N-CH 60V 20A 8TSDSON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ110N06NS3GATMA1 | Digi-Reel | 3,647 | 1 |
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BSZ110N06NS3GATMA1 | Reel | 8 Weeks | 5,000 |
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BSZ110N06NS3GATMA1 | Bulk | 15,897 | 1 |
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BSZ110N06NS3GATMA1 | 181,955 | 1 |
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BSZ110N06NS3GATMA1 | 20,000 |
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BSZ110N06NS3GATMA1 | Reel | 25,000 | 5,000 |
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BSZ110N06NS3GATMA1 | 35,000 | 9 Weeks | 5,000 |
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BSZ110N06NS3GATMA1 | 30,000 | 1 |
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BSZ110N06NS3GATMA1 | 18,739 |
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BSZ110N06NS3GATMA1 | 68,970 |
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Infineon Technologies AG BSC110N06NS3 GMOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3 |
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BSC110N06NS3 G | 84,806 |
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Infineon Technologies AG BSZ110N06NS3 GMOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3 |
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BSZ110N06NS3 G | 81,393 |
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BSZ110N06NS3 G | Bulk | 10 | 2 Weeks | 1 |
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BSZ110N06NS3 G | 80,200 |
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Infineon Technologies AG BSC110N06NS3GATMA1.Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:50W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSC110N06NS3GATMA1. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC110N06NS3GATMA1. | Reel | 5,000 |
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110N06NS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 60 V RDS(on),max 11 mW ID 50 |
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BSC110N06NS3 IEC61249-2-21 110N06NS | |
110N06NS
Abstract: JESD22 ua323
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BSZ110N06NS3 110N06NS 110N06NS JESD22 ua323 | |
Contextual Info: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM) |
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BSC110N06NS3 110N06NS | |
110N06NS
Abstract: BSC110N06NS3 BSC110N06NS3 G JESD22 FS25
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BSC110N06NS3 110N06NS 110N06NS BSC110N06NS3 G JESD22 FS25 | |
110N06NS
Abstract: BSC110N06NS3 G BSC110N06NS3G BSC110N06NS3 IEC61249-2-21 JESD22 MARKING d50 FS25
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BSC110N06NS3 IEC61249-2-21 110N06NS 110N06NS BSC110N06NS3 G BSC110N06NS3G IEC61249-2-21 JESD22 MARKING d50 FS25 |