110NMX100NM Search Results

HS-26C31MS

Abstract: 26C31M HS1-26C31MSR HS26C31ms harris HS-26C31MS ER3401
Contextual Info: HS-26C31MS fü HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver December 1992 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x10s RAD/Sec (20nS Pulse) HS1-26C31MSR 16 PIN CERAMIC DUAL-IN-LINE

Contextual Info: HS-26CT31RH Semiconductor R a d ia tio n H a rd e n e d March 1995 Q u a d D ifferential L in e D river Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26CT31RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTLINE D2, CONFIGURATION C TOP VIEW - Total Dose Up to 300K RAD Si

Contextual Info: HS-26C32RH Semiconductor Radiation H ardened Q u ad Differential Line R e c e iv e r August 1995 Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26C32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si

26C31

Abstract: Harris top marking
Contextual Info: HS-26C31RH Semiconductor Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS 16 Lead Ceramic Dual-in-Line Metal Seal Package SBDIP Mil-Std-1835 CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD(Si)

Contextual Info: HS-26CT32RH Semiconductor Radiation H ardened Q u ad Differential Line R e c e iv e r August 1995 Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26CT32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si