2 Wavelength Laser Diode
Abstract: laser 850 vcsel array
Text: AVAP - 1x10SM Single-mode VCSEL array Features • • • • • 1x10 VCSEL array 850 nm wavelength range Single-mode emission High wavelength uniformity Other configurations available on request Electro-optical characteristics for individual lasers (T = 25°C)
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1x10SM
1x10SM
2 Wavelength Laser Diode
laser 850
vcsel array
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Untitled
Abstract: No abstract text available
Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly
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HC80805
1x10s
1x109
1x102upsets/module-day)
BADDR11
BARRD10
BDISCRI03
BDISCRI02
BDISCRI01
BADDR21
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HS-26C31MS
Abstract: 26C31M HS1-26C31MSR HS26C31ms harris HS-26C31MS ER3401
Text: HS-26C31MS fü HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver December 1992 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x10s RAD/Sec (20nS Pulse) HS1-26C31MSR 16 PIN CERAMIC DUAL-IN-LINE
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HS-26C31MS
HS1-26C31MSR
1x10s
RS-422
HS-26C31MS
10sA/cm2
110nmx100nm
26C31M
HS26C31ms
harris HS-26C31MS
ER3401
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Untitled
Abstract: No abstract text available
Text: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02
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HC6464
24-Pin
1x10s
1x101
PIN23
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6216 sram
Abstract: No abstract text available
Text: b3E D SRAMs M5 5 1 Ô7 2 DÜQQ^Dñ HONEYUELL/ S Honeywell b?b « H 0 N 3 S E C 2K x 8 RADIATION-HARDENED STATIC RAM HC6216 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2|im Process • Typical 45 ns Access T im e • Total Dose Hardness through 1x10s rad S i0 2
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HC6216
1x10s
1x109
1x1012
6216 sram
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socket g34 pinout
Abstract: smd marking WMM
Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02
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HC6664
1x10s
1x1014N/cm2
1x109
MIL-l-38535
36-LE
28-LEAD
HC6364/1
socket g34 pinout
smd marking WMM
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Untitled
Abstract: No abstract text available
Text: b3E » • *4551072 DÜGOTbl 7^b ■H0N3 Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER ■ Fabricated with RICMOS IV Bulk 0.8 jim Process • Read/Write Cycle Times s 40 ns -55 to 125°C • Total Dose Hardness through 1x10s rad(Si02)
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HC6856
1x10s
1x109
36-Lead
28-Lead
HC6856/1
1E-10
S00049
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VF150
Abstract: valpey VF150 valpey OCXO sma VF600 VFHS85 ocxo tcxo V/VF500
Text: MATEC CORP/ VALPEY-FISHER | 3 lg E » • 5 Abl~D a ^rò 0 D O Ìflà ~ Q ~ W V P c" VF500 Series DISCRETE TEMPERATURE COMPENSATED CRYSTAL OSCILLATORS TCXO Valpey-Fisher Temperature Compensated Crystal Oscillators (TCXOs) use select components which react to thermal
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VF500
137II
VF150
valpey VF150
valpey OCXO sma
VF600
VFHS85
ocxo tcxo
V/VF500
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2N7268
Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs
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IRHM7150
IRHM815Q
IRHM8150
JANSRSN7S68
1x106
1x105
IRHM71500
IRHM7150U
2N7268
h206
h208
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Hk612
Abstract: No abstract text available
Text: . _ . j| to b# dtoqlBMd. nprwluoad a r u—d, in vhoto er tn port, for m n u l M i n or Mfe by o t m m oHm t toon Am phm l - - * ” -1-1 *• “ —1 no right b granted to M m Customer SECTION 4 C -C 3 REVISIONS SYM Drawing
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HK3854
HK4281
HK6127
S--SN--00
5ATA\CSATA0O1Q22SXX-1JJWO
Hk612
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Untitled
Abstract: No abstract text available
Text: MIC2171 MIC2171 100kHz 2.5A Switching Regulator Preliminary Information General Description Features The MIC2171 is a complete 100kHz SM PS current-mode controller with an internal 65V 2.5A power switch. 2.5A, 65V internal switch rating 3V to 40V input voltage range
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MIC2171
100kHz
MIC2171
LM2577
LT1171/LM2577
T0-220
O-263
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Untitled
Abstract: No abstract text available
Text: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled
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DS3480-2
MA9187
MA9187
37bfi522
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Untitled
Abstract: No abstract text available
Text: p P jp i G E C P L E S S E Y ADVANCE DATA SE MI CONDU CTORS DS3694-2.1 MA9564 HIGH TRANSIENT/RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9564 64k Static RAM is configured as 8192 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.Sjim technology. The device has been designed specifically for high
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DS3694-2
MA9564
MA9564
MC6364
7CL00
SCL00
9CL00
0023T01
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Untitled
Abstract: No abstract text available
Text: Si GEC P I E S S E Y SE M I CO N D U CT O RS DS3578-2 4 MA2910 RADIATION HARD MICROPROGRAM CONTROLLER The industry standard MA2910 Microprogram Controller forms part of the MA2900 family of devices. Offering a building block approach to microcomputer and controller design, each device in the range is expandable
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DS3578-2
MA2910
MA2910
MA2900
Cobalt-60
Mil-Std-883
1x10s
1x101
GS010%
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)
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HX84050
1x106
1x10s
200-Lead
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HR2340
Abstract: sram pull down honeywell memory sram
Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec
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1x106
1x103rad
1x1012rad
HR2340
HR2340
sram pull down
honeywell memory sram
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DQ4-21
Abstract: No abstract text available
Text: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process
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1x10s
HX6364
DQ4-21
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PURE 5001
Abstract: SP 5001 IC K6275
Text: f Amphonol Corporation and • d*ltv«r«d o not to bi dlwlon d, reproduced or und, In ire or aalo by anyono ottior than Amphonol e»rt, & that no right 1» granted to dtseloM R E V IS IO N S Customer SYM Drawl >ionn ECN DESCRIPTIO N A HK4071 DATE APPR O VED
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HK4071
K6275
\DRAWING\SATA\CSATA0010247X-1
PURE 5001
SP 5001 IC
K6275
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K627
Abstract: IC TRAY K6275
Text: Thl* document la the property of Amphenol Corporation ond la deltvared on the « x p n n condition that II I* not to bi dlnloeed, reproduced or imd, lr whole or In pari, for manufacture or aale by anyona oltiar than Amphenol Corporation without tta prior concert. & that no right 1» grantad to dtseloM
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K4958
08/05/1C
08/05/1C
\DRAWING\SATA\CSATA0010271
SATA-001-0271
K627
IC TRAY
K6275
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Untitled
Abstract: No abstract text available
Text: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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IRHY9130CM
JANSR2N7382
MIL-PRF-19500/615]
Liguria49
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE7S30 HEXFET TRANSISTORS IRHE8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40i2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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IRHE7S30
IRHE8S30
1x105
1x106
H-109
IRHE7230,
IRHE8230
H-110
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45Í2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHN7450
IRHN8450
1x106
H-333
IRHN7450,
IRHN8450
5S452
H-334
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Untitled
Abstract: No abstract text available
Text: International S R ectffier Preliminary Data Sheet No. PD-9.1332 IRHM7260 IRHM8260 REPETITIVE AVALANCHE ANO dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 200Volt, 0.070ft, MEGA RAD HARD HEXFET International Rectifier’s RAD H ARD technology
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IRHM7260
IRHM8260
200Volt,
070ft,
55MS2
500X1
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.676A INTERNATIONAL RECTIFIER I @ R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7130 IRHB130 MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRH7130
IRHB130
1x10s
IRH7130,
IRH8130
S5452
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