1111S Search Results

Low Voltage DIACs

Contextual Info: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V DO-35 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

Contextual Info: BL GALAXY ELECTRICAL DB3S.DB4S SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at

Contextual Info: DIP Type SBPS Coils SBPS-1111series（SBPS-1111-□□□） Inductance DC resistance Model at 10 kHz, 1 mA Ω ( H) max. 1111-100 10±20% 0.04 1111-150 15±20% 0.04 1111-220 22±20% 0.05 1111-330 33±20% 0.06 1111-470 47±20% 0.08 1111-680 68±20% 0.12

CCF1143

Abstract: 1111SQ-27N 1111SQ-36N nh43
Contextual Info: Document 990 -1 Square Air Core Inductors – 1111SQ • Excellent Q factors – 210 at 400 MHz! • Inductance values from 27 to 47 nH • Flat top and bottom for reliable pick and place and mechanical stability Terminations RoHS compliant tin-silver over copper

tokin 108

Abstract: P0718
Contextual Info: DIP Type SBPS Coils 〈Magnetically 〈Magnetically Shielded Shielded Type〉 Type〉 ［RoHS ［RoHS Compliant］ Compliant］ SBPS-1111series（SBPS-1111-□□□） Inductance DC resistance Model at 10 kHz, 1 mA Ω ( H) max. 1111-100 10± 20% 0.04 1111-150

Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at

Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

bl db3 galaxy

Abstract: db3 bl 100HZ 05R05 DB3 galaxy
Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

Contextual Info: DIP-Type SBPS Coils ［Comply with RoHS］ SBPS-1111series（SBPS-1111-□□□） Inductance DC resistance Model at 10 kHz, 1 mA Ω ( H) max. 1111-100 10± 20% 0.04 1111-150 15± 20% 0.04 1111-220 22± 20% 0.05 1111-330 33± 20% 0.06 1111-470 47± 20%

Contextual Info: DIP Type SBPS Coils 〈Magnetically 〈Magnetically Shielded Shielded Type〉 Type〉 ［RoHS ［RoHS Compliant］ Compliant］ ●SBPS-1111series（SBPS-1111-□□□） Inductance DC resistance at 10 kHz, 1 mA Ω Model ( H) max. SBPS-1111-100 10± 20%

bl db3 galaxy

Abstract: bl db3 db3 bl DIACs
Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

Contextual Info: DIP Type SBPS Coils 〈Magnetically 〈Magnetically Shielded Shielded Type〉 Type〉 ［RoHS ［RoHS Compliant］ Compliant］ ●SBPS-1111series（SBPS-1111-□□□） Inductance DC resistance at 10 kHz, 1 mA Ω Model ( H) max. SBPS-1111-100 10± 20%

Contextual Info: 10 0.5“ 0.25MIN. X yX (PITCH) 11111111111111111111 i|n|ii|n|n|n|n|njn|n|i|i|njn|n|n|ii|njn|n|n|i -i -i-1—i -i-1—i -i—i+i -i-1—i -i—i—i -i—i—i 1111S111S111SSS11SS1 \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ r 00 5.4 ta X X fT X M ( R X tX B )

bl db3 galaxy

Abstract: db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405
Contextual Info: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

Contextual Info: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V A-405 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse

1111S

Contextual Info: COAXIAL ATTENUATORS N_ 1 WATT REFERENCE ATTENUATOR SET Part Number Frequency range GHz ATTENUATION (dB) V.S.W.R. Power (W) Weight (Max) (g) Nominal Deviation DC-4 4-8 8-12.4 1 2 . 4- 1 8 avg. peak 1111S filila ± 0 .4 0 • - 1 15 •-V 1 20

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash

HD6475368CP

Abstract: HD6475348CP programmers HD6475368CP HD6475348rf CPU H8 534 H8/536 HD6475348RCP HD6435348R HD6435348S HD6435368R
Contextual Info: OMC 932723248 Hitachi Single-Chip Microcomputer H8/534, H8/536 HD6475348R, HD6435348R HD6475368R, HD6435368R HD6475348S, HD6435348S HD6475368S, HD6435368S Hardware Manual ADE-602-038B Preface The H8/534 and H8/536 are high-performance single-chip Hitachi-original microcomputers,

HD6475388F

Abstract: HD6475388 CPU H8/539 HD7404 H8/539 SENSOR HALL 505A p71 0107 HD6435388F HD6435398F HD6475398F
Contextual Info: OMC942723072 Hitachi Single-Chip Microcomputer H8/538, H8/539 Hardware Manual 2nd Edition Preface The H8/538 and H8/539 are original Hitachi high-performance single-chip microcontrollers with a high-speed 16-bit H8/500 CPU core and extensive on-chip peripheral functions. They are suitable

HD64F5398F16

Abstract: HD64F5398 hd64f5398f T P806 HD64F5398F 16 mult drive 0332 HD7404 H8/500 Series Programming Manual Hitachi H8/539F mult drive hitachi 0332
Contextual Info: cont, preface 02.05.1998 10:16 Uhr Page 1 Hitachi Single-Chip Microcomputer H8/539F-ZTATTM HD64F5398 HD64F5398S Hardware Manual ADE-602-108A Rev. 2.0 3/23/98 Hitachi, Ltd. cont, preface 02.05.1998 10:16 Uhr Page 3 Preface The H8/539F is an F-ZTAT *1 microcontroller with on-chip flash memory that can be

at89lp4052-20su

Abstract: AT89LP2052
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • Compatible with MCS 51 Products 20 MIPS Throughput at 20 MHz Clock Frequency and 2.4V, 85°C Operating Conditions Single Clock Cycle per Byte Fetch 2/4K Bytes of In-System Programmable ISP Flash Memory

Contextual Info: fS 5 2 3 1 E E 31.D 49.20 D D C C B B ITEM PART NAME CLIP © h e a t s in k : MATERIAL MDDEL ND. Q'Ty PART ND. / □ oo A $115304,L5MM DIAMETER 1 CHAUN-CHDUNG TECHNDLDGY CORP. □ CL Ld Q/ © MYLAR © TIM Tb063-T5,BLDCK ANODIZE EORMEX GK 17BK, 0,017INCH THICKNESS

SS-39100-005

Abstract: SS-39100-002 SS-39100 119D6
Contextual Info: DATE REV APP'D. BY ECN - XO - - 7 -2 7 -0 5 AO 7211 EPF g -B -0 5 A1 7264 TRM 1 -1 9 -B 6 A2 744-1 JM B NOTES: 1 - PLUG KIT 0 0N 95 T S OF : P R E -IN S E R T E D PLUG BODY MANAGEMENT BAR 2 - MATERIALS : FRONT HOUSING PLASTIC : MANAGEMENT BAR : CLEAR POLYCARBONATE, UL 94-VO

uei 005

Abstract: 7486 ci BF 235 PR02 JM26
Contextual Info: DATE REV ECN AFPD. by 1/31/06 A1 7462 JM 2/6/06 A2 74B6 JM B A NOTES: 1 - PLUG KIT CONSISTS OF : PRE-INSERTED PLUG HOUSING MANAGEMENT BAR 2 - MATERIALS : FRONT HDUSNG PLASTIC : CLEAR POLYCARBONATE, UL 94-VO MANAGEMENT BAR : CONTACTS : CLEAR POLYCARBONATE; UL 94-VO