117M Search Results

K7A161801M

Abstract: K7A163601M advh
Contextual Info: K7A163601M K7A161801M 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft Jan. 18. 1999 Preliminary 0.1 1. Update ICC & ISB values. 2. Remove tCYC 117MHz -85

Contextual Info: PART NUMBER: 117MDCL900KFE# METALLIZED POLYPROPYLENE, ROUND TUBE CAPACITOR PARTS ARE ROHS COMPLIANT ELECTRICAL SPECIFICATIONS Capacitance: 110 uF Dissipation Factor: 0.0002 Max at 100 Hz and 25°C Temperature Coefficient: -200 PPM/°C : -100 PPM/°C , 100 PPM/°C

PCP1403-TD-H

Contextual Info: Ordering number : ENA2294A PCP1403 N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C

AP2304GN

Contextual Info: AP2304GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small package outline D ▼ Surface mount package BVDSS 25V RDS ON 117mΩ ID 2.7A S SOT-23 Description G The Advanced Power MOSFETs from APEC provide the

Contextual Info: 117MHz SAW Filter 10MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. N11703 Part Number:LB Number:LBN11703 www. sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation

junction temperature v850

Contextual Info: Preliminary - April 1998 ¡il T t d l N O L O C V 2.5V or 3.3V I/O 117/100/90/50 GS840NBT18FT F eatures Output registers are provided and are controlled by FT mode pin. With FT mode pin, output registers can be programmed in either pipeline mode for very high frequency operation (117MHz or

G2304A

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/03/21 REVISED DATE : G2304A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 117m 2.5A Description The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

G2304

Contextual Info: Pb Free Plating Product CORPORATION G2304 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B BVDSS RDS ON ID 25V 117m 2.7A Description The G2304 provides the designer with the best combination of fast switching, low on-resistance and

AP2304AGN

Contextual Info: AP2304AGN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques

IDT71V632

Abstract: sram with address counter
Contextual Info: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.

AS8C801825

Abstract: AS8C803625 256K x 8 SRAM dip
Contextual Info: 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect AS8C803625 AS8C801825 Features • •       256K x 36, 512K x 18 memory configuration Supports fast access times: - 7.5ns up to 117MHz clock frequency

71V632

Abstract: IDT71V632
Contextual Info: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632/Z with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.

data MOSFET SOT-23

Contextual Info: AP2304AGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S ▼ RoHS Compliant SOT-23 G Description

Contextual Info: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632 with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.

117-601MR

Contextual Info: CURRENT TRANSFORMER Model 117MR APPLICATION: FREQUENCY: INSULATION LEVEL: CONTINUOUS THERMAL CURRENT RATING FACTOR: 600:5MR Model 117-601MR - rating C20

Contextual Info: GSI TECHNOLOGY GS820V32Q/T 64K x 32 Burst GS820V32Q/T 4/5/6, 2.5V I/O, 2.0mA Features • Single 3.3V +5%/-5% power supply • Separate VDDQ to allow 2.375V to 3.465V output supply level • High frequency operation: 117MHz • Fast access time: 4.5ns Clock to Q

IDT71V632

Contextual Info: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632 with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.

Contextual Info: PRELIMINARY SSRAM AS5SS128K32 128K x 32 4Mb Synchronous Flow-Through Static Ram FEATURES GENERAL DESCRIPTION • Available in Mil-Temp*, Enhanced & Industrial Ranges • Clock frequency up to 117MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IDT71V632

Contextual Info: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632/Z with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.

AP2304AN

Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
Contextual Info: AP2304AN Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques

Contextual Info: Ordering number : EN*A2294 PCP1403 Advance Information http://onsemi.com N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications

Contextual Info: 8 5 6 7 ECRN 13677 ECB 4/11/04 4.3 .17 2 3.23 2.97 .127 .117 D 1.00[25.4] MAX .65 [16.5] MIN 31.8 1.25 8.4 .33 1 25.40±0.38 1.000±.015 15.9 .63 RADIUS OR CHAMFER 12.8 .50 C SUGGESTED DIMENSIONS FOR MATING BLADE 19.10 .752 1 2 REV. 2 27 1.06 ECRN 14133: .117MIN/.127 MAX WAS .125 .002,

GS811V

Abstract: IQE3045
Contextual Info: in T f ( 4 1 N 0 LOCI G S 811V 32Q /T GS811V32Q/T Q O tf v OO D u v e t* 80-117MHz(P/L) 2.5V_ O fcl\ X O C . DU I O I_ 66MHz(FT) Features • • • • • • • Single 3.3V +5%/-5% power supply Separate VDDQ to allow 2.375V to 3.465V output supply level

CD73

Contextual Info: Preliminary - February 98 CU l i tu H0LOCV 2.5V or 3.3V 64K x 64 Burst 117/100/83/75/66 Features • • • • • • • • • • • Single 3.3V +10%/-5% power supply 5-volt tolerant clock High frequency operation: 117MHz Fast access time: 4.5ns Clock to Q