117NH Search Results

723 voltage regulator

Abstract: RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH
Contextual Info: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

723 voltage regulator

Abstract: IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 VRF157FL RL1009-5820-97-D1
Contextual Info: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

MC1723

Contextual Info: VRF157FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation distortion.

RL1009-5820-97-D1

Abstract: MRF157
Contextual Info: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

w amplifier 30mhz

Abstract: 1N5362
Contextual Info: VRF154FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation

ATC-700B

Abstract: 117nH
Contextual Info: VRF157FL G VRF157FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

ATC 700E

Abstract: arco TRIMMER capacitor RESIStance 100 OHMS and 600W FERRITE TOROID 723 voltage regulator IN4148 equivalent MRF157
Contextual Info: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

ACT361US-T

Abstract: FSCR ic 230v dc 8a rectifier diode
Contextual Info: ACT361 Rev 8, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator The ACT361 ensures safe operation with complete protection against all fault conditions. Built-in protection circuitry is provided for output shortcircuit, output over-voltage, line under-voltage, and

VRF157FL

Abstract: 2204B MRF157 RL1009-5820-97-D1 Dielectric Laboratories 117nH arco TRIMMER capacitor 262 10E112
Contextual Info: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

Contextual Info: VRF157FL VRF157FLMP 50V, 600W, 80MHz D RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

IN5357

Abstract: VRF157FL MRF157 1kw mosfet 2204B mp Ceramic Disc Capacitors T46 634 arco TRIMMER capacitor 262 thermistor M35
Contextual Info: VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.