11EQS10 Search Results

11EQS09

Abstract: 11EQS10
Contextual Info: SCHOTTKY BARRIER DIODE 11EQS09 11EQS10 1.1A/90— 100V FEATURES o Miniature Size <3l ° Low Forward Voltage Drop 2.7C.106 .DIA MAX 0.601024) p , «s 0.54 .Q21) .27(1.06) MIN Low Power Loss, High Efficiency ° High Surge Capability » 20 Volts thru 100 Volts Types Available

Contextual Info: SCHOTTKY BARRIER DIODE 11EQS09 11EQS10 1.1A/90— 100V FEATURES '2.71.106 DIA MAX » Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60 .024) rjr a 0.541.021) ° High Surge Capability 27(1.061 M IN ° 20 Volts thru 100 Volts Types Available

11EQS10

Contextual Info: 1A Avg. 100 Volts SBD 11EQS10 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 100 平 均 整 流 電 流 Average Rectified Forward Current IO 50Hz正弦半波通電抵抗負荷

11EQS10

Contextual Info: SBD Type :11EQS10 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage

11EQS10

Contextual Info: SBD Type :11EQS10 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage

Contextual Info: 100 Volts 1A Avg. 11EQS10 SBD •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 100 平 均 整 流 電 流 Average Rectified Forward Current IO 50Hz正弦半波通電抵抗負荷

30PHA20

Abstract: 10EQMA04 21DQ09 DIODES ta-59 EP10QY04 10eqma
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline Axial Lead Type 11EQS03L 11EQS04 10EQMA04 11EQS06 11EQS09 11EQS10 10EHA20 30 40 40 60 90 100 200 1 1 1 1 1 1 1 Ta=55℃ Ta=48℃ Ta=43℃

11eqs10

Contextual Info: SBD Type :11EQS10 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage

Contextual Info: SBD 構 Type：11EQS10 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings

Contextual Info: SBD 構 Type：11EQS10 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04

R412A

Abstract: PTH9M04 TRANSISTOR NPN D362 equivalent tlp421f transistor D357 equivalent SWITCHING TRANSISTOR d144 be471 c450 transistor transistor C388 RE474
Contextual Info: HA16158 EVB1.0 Application Note Evaluation Board for the HA16158 AC-DC Converter Controller IC with PFC and PWM Functions Rev.1.00 2003.7.28 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better