Untitled
Abstract: No abstract text available
Text: SBD Type :11EQS09 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
11EQS09
30volts
100volts
|
11EQS09
Abstract: No abstract text available
Text: SBD Type :11EQS09 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
11EQS09
30volts
100volts
11EQS09
|
Untitled
Abstract: No abstract text available
Text: SBD Type :11EQS09 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
11EQS09
30volts
100volts
|
Untitled
Abstract: No abstract text available
Text: 1A Avg. 90 Volts SBD 11EQS09 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 90 平 均 整 流 電 流 Average Rectified Forward Current IO 50Hz正弦半波通電抵抗負荷
|
Original
|
PDF
|
11EQS09
|
30PHA20
Abstract: 10EQMA04 21DQ09 DIODES ta-59 EP10QY04 10eqma
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM(mA) 25°C Tjmax (°C) Case Outline Axial Lead Type 11EQS03L 11EQS04 10EQMA04 11EQS06 11EQS09 11EQS10 10EHA20 30 40 40 60 90 100 200 1 1 1 1 1 1 1 Ta=55℃ Ta=48℃ Ta=43℃
|
Original
|
PDF
|
11EQS03L
11EQS04
10EQMA04
11EQS06
11EQS09
11EQS10
10EHA20
11EQ04
11EQ06
11EQ09
30PHA20
21DQ09 DIODES
ta-59
EP10QY04
10eqma
|
marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
|
Original
|
PDF
|
HVD141/142
HZU16
HZU10
HZU18
HZU11
HZU20
HZU12
HZU22
HZU13
HZU24
marking code 62z
philips surface mount zener diode v6
marking 68m sot 23-5
1S2473 equivalent
DIODE ROHM 3pin Marking A7
IPS302
marking 62z SOT23
diode S4 68a
1ss81 diode equivalent
1S2473 DIODE equivalent
|
Untitled
Abstract: No abstract text available
Text: SBD 構 Type:11EQS09 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
|
Original
|
PDF
|
Type11EQS09
11EQS09
|
Untitled
Abstract: No abstract text available
Text: SBD 構 Type:11EQS09 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
|
Original
|
PDF
|
Type11EQS09
11EQS09
|
diode cross reference 1s1555
Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Text: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,
|
Original
|
PDF
|
DO-35
1S1555,
1S1588
1SS104
1S1553,
1S1554
1S953
MA161
1S1586,
1S1587
diode cross reference 1s1555
diode cross reference 1s2473
IPS302
1SS211
1S2473 DIODE equivalent
1S2473 DIODE
toshiba diode do-41
1s1555 diode
1ss202
1SS153
|
Untitled
Abstract: No abstract text available
Text: SBD 構 Type:11EQS09 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
|
Original
|
PDF
|
11EQS09
|
11EQS09
Abstract: 11EQS10
Text: SCHOTTKY BARRIER DIODE 11EQS09 11EQS10 1.1A/90— 100V FEATURES o Miniature Size <3l ° Low Forward Voltage Drop 2.7C.106 .DIA MAX 0.601024) p , «s 0.54 .Q21) .27(1.06) MIN Low Power Loss, High Efficiency ° High Surge Capability » 20 Volts thru 100 Volts Types Available
|
OCR Scan
|
PDF
|
11EQS09
11EQS10
11EQS09
125-C
00017m
11EQS10
|
Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS09 11EQS10 1.1A/90— 100V FEATURES '2.71.106 DIA MAX » Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60 .024) rjr a 0.541.021) ° High Surge Capability 27(1.061 M IN ° 20 Volts thru 100 Volts Types Available
|
OCR Scan
|
PDF
|
A/90--
11EQS09
11EQS10
|
FC54M
Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
Text: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460
|
OCR Scan
|
PDF
|
DO-41
1SS267
1S1555,
1S1588
1SS104
1S1553,
1S1554
1S2092,
1S2460
1S2461,
FC54M
FC53M
diode cross reference 1s1555
diode cross reference 1s2473
RLS135 "cross reference"
1SS1586
1SS211
sanken SE014
1SS2021
toshiba diode "do-41"
|
30KF60B
Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166
|
OCR Scan
|
PDF
|
1N4001
1N4002
1N4004
1N4005
1N4006
1N4007
2VF10CT
F20CT
F30CT
F40CT
30KF60B
10EF1
NSF03A20
C25P10Q
F10P10Q
C25P40F
KSF25A120B
C10P10Q
61MQ60
c16p40f
|
|
F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
|
OCR Scan
|
PDF
|
11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
|