11JUL07 Search Results

GR-1435-CORE

Abstract: GR-1435 EIA-455-B TIA-455-3A EIA-455 EIA/TIA 455-8 49258 TIA-455-3A section C EIA-455-11 EIA-455-36A
Contextual Info: Product Specification 108-2167 11Jul07 Rev C MPO and MPO SECURE Multimode Fiber Optic Connector and Adapter | | 1. SCOPE 1.1. Content This specification, which is based on GR-1435-CORE, covers the performance, tests and quality requirements for the MPO multimode connectors with bare ribbon fiber and the MPO adapters.

250M

Abstract: gas10
Contextual Info: Product Specification 108-5701 11JUL07 Rev. F DDR S.O.DIMM Socket 200 Positions 1. Scope : 1.1 Contents This specification covers the requirements for product performance, test methods and quality assurance provisions of DDR S.O.DIMM Socket 200 Positions Combine to Gold Plating S.O.DIMM.

GR-1435-CORE

Abstract: FOTP-171 EIA-455 90 degree fiber array
Contextual Info: Qualification Test Report 501-556 11Jul07 Rev C MPO and MPO SECURE Multimode Fiber Optic Connector and Adapter | | 1. INTRODUCTION 1.1. Purpose | | Testing was performed on MPO multimode fiber optic connectors and adapters to determine their conformance to the requirements of Tyco Electronics Product Specification 108-2167, Revision C.

Contextual Info: PZT159 PNP Silicon Planar High Current Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -100 V

DALE RH-25

Abstract: 18546 RH005 RE77N rh 25 25 RE75G NH010 RE60G RE65G NH-250
Contextual Info: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection Pb-free Available • Complete welded construction • Meets applicable requirements of

AD670

Contextual Info: 8-Bit Low Cost Signal Conditioning ADC AD670 1.0 2.0 3.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as

74843

Abstract: AN609
Contextual Info: Si1404BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Contextual Info: Si1472DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic: 3rd Harmonic: Pushing: Pulling, all Phases: Tuning Sensitivity: @ 10kHz offset: Phase Noise

D1002-BD

Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1
Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

RH005

Abstract: Dale Resistor RH50 NH010 RE60G RE65G "RH-5" RH-25 Dale Resistor rh 10 RE Military
Contextual Info: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection Pb-free Available • Complete welded construction • Meets applicable requirements of

7408

Abstract: 7408 and AN609 Si6968BEDQ si6968 1-50487 235742 112274
Contextual Info: Si6968BEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74848

Abstract: AN609 Si6969BDQ
Contextual Info: Si6969BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

RWR82

Abstract: NH010
Contextual Info: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection Pb-free Available • Complete welded construction • Meets applicable requirements of

RTO 50

Contextual Info: RTO 50 Vishay Sfernice Power Resistor, Thick Film Technology FEATURES • 50 W at 25 °C Heatsink Mounted • Adjusted by sand trimming RoHS • Leaded or surface mount versions COMPLIANT • High power to size ratio • Non inductive element Because of the knowledge and experience in Thick Film technology, Vishay Sfernice has been able to develop a high power

PZT951

Contextual Info: PZT159 PNP Silicon Planar High Current Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -100 V

Contextual Info: Thursday, Mar 13, 2008 1:54 PM / 8-Bit Low Cost Signal Conditioning ADC AD670 1.0 2.0 3.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as

DALE RH-25

Abstract: rh-50 dale resistors RH050 RH005 RH-25 rh010 RE75G NH010 "RH-5" rh-10 dale resistors
Contextual Info: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection • Complete welded construction • Meets applicable requirements of MIL-PRF-18546

23741

Abstract: AN609 Si6968ADQ
Contextual Info: Si6968ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74801

Abstract: 412600 AN609 Si6983DQ 74909
Contextual Info: Si6983DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

MIC24F11-0101

Abstract: MIC24412-0128
Contextual Info: more than you expect Integrated 10/100 Base-T RJ45 Through Hole Unshielded Series LANDatacom Typical Electrical Characteristics 1 Inductance 350uH Min. 1500VAC Dielectic Rating 1CT:1CT Turns Ratio Insertion Loss -1.0dB max. -18dB min. -16dB min. Return Loss

DALE RH-25

Abstract: RH050 RH005 Dale Resistor RH50 18546 NH010 RE60G RE65G "RH-5" rh-50 dale resistors
Contextual Info: RH, NH Vishay Dale Wirewound Resistors, Military, MIL-PRF-18546 Qualified, Type RE, Aluminum Housed, Chassis Mount FEATURES • Molded construction for total environmental protection Pb-free Available • Complete welded construction • Meets applicable requirements of

Leaded Fixed Wirewound Resistors

Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

AN609

Abstract: Si6981DQ
Contextual Info: Si6981DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].