SI6968 Search Results

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si6968BEDQ

Abstract: Dual Gate mosfet spice
Contextual Info: SPICE Device Model Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application

Si6968BEDQ

Abstract: Si6968BEDQ-T1
Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8

Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8

SI6968BEDQ-T1-E3

Abstract: si6968edq-t1-reva Si6968BEDQ Si6968BEDQ-T1 Si6968EDQ-REVA SI6968EDQ-T1
Contextual Info: Specification Comparison Vishay Siliconix Si6968BEDQ vs. Si6968EDQ-REVA Description: Dual N-Channel, 2.5 V G-S MOSFET Common Drain with ESD Protection Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6968BEDQ-T1 Replaces Si6968EDQ-T1-REVA

Contextual Info: SI6968DQ VISHAY Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 r DS(ON) Id (& ) (A) 0.022 @ VGS = 4.5 V ±6 .5 0.030 @ VGS = 2.5 V ±5 .5 D D N-Channel MOSFET N-Channel MOSFET TSSOP-8 D Si D Si6968DQ S2 Si S2 Gi g2 Gi Top View

Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs

7408

Abstract: 7408 and AN609 Si6968BEDQ si6968 1-50487 235742 112274
Contextual Info: Si6968BEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si6968BEDQ

Abstract: Si6968BEDQ-T1
Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs

Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • TrenchFET Power MOSFET • ESD Protected: 3000 V Pb-free

Contextual Info: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8

Si6968BEDQ

Abstract: Si6968BEDQ-T1
Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs

Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs

Si6968DQ

Contextual Info: SPICE Device Model Si6968DQ Vishay Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET Common Drain CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

23741

Abstract: AN609 Si6968ADQ
Contextual Info: Si6968ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6968DQ

Contextual Info: Si6968DQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.022 @ VGS = 4.5 V "6.5 0.030 @ VGS = 2.5 V "5.5 D D TSSOP-8 D 1 S1 2 S1 G1 8 D 7 S2 3 6 S2 4 5 G2 D Si6968DQ G1 G2 Top View S1 S2 N-Channel MOSFET

74233

Abstract: Si6968ADQ Si6968DQ SI6968DQT1
Contextual Info: Specification Comparison Vishay Siliconix Si6968ADQ vs. Si6968DQ Description: Package: Pin Out: N-Channel, 2.5 V G-S BATTERY SWITCH TSSOP-8 Identical Part Number Replacements Si6968ADQ-T1-E3 Replaces Si6968DQ-T1-E3 Si6968ADQ-T1 Replaces Si6968DQ-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si6968EDQ-REVA

Contextual Info: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 8 D 7 S2 3 6 S2 4 5 G2 D 1 S1 2 S1 G1 D Si6968ADQ G1 G2 Top View S1 S2 N-Channel MOSFET

Si6968EDQ-REVA

Contextual Info: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5

Si6968EDQ-REVA

Contextual Info: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5

Contextual Info: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5