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    11N60C Search Results

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    11N60C Price and Stock

    Infineon Technologies AG SPB11N60C3ATMA1

    MOSFET N-CH 650V 11A TO263-3
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    DigiKey SPB11N60C3ATMA1 Digi-Reel 3,518 1
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    SPB11N60C3ATMA1 Cut Tape 3,518 1
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    SPB11N60C3ATMA1 Reel 2,000 1,000
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    Avnet Americas SPB11N60C3ATMA1 Bulk 32 Weeks, 4 Days 1
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    Newark SPB11N60C3ATMA1 Bulk 1,963 1
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    EBV Elektronik SPB11N60C3ATMA1 16 Weeks 1,000
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    Infineon Technologies AG SPP11N60C3XKSA1

    MOSFET N-CH 650V 11A TO220-3
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    DigiKey SPP11N60C3XKSA1 Tube 325 1
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    Avnet Americas SPP11N60C3XKSA1 Tube 15 Weeks 500
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    Mouser Electronics SPP11N60C3XKSA1 427
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    Newark SPP11N60C3XKSA1 Bulk 888 1
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    Rochester Electronics SPP11N60C3XKSA1 250 1
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    TME SPP11N60C3XKSA1 79 1
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    EBV Elektronik SPP11N60C3XKSA1 16 Weeks 500
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    Win Source Electronics SPP11N60C3XKSA1 12,500
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    Infineon Technologies AG SPA11N60C3XKSA1

    MOSFET N-CH 600V 11A TO220-3
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    DigiKey SPA11N60C3XKSA1 Tube 90 1
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    Avnet Americas SPA11N60C3XKSA1 Tube 15 Weeks 500
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    Newark SPA11N60C3XKSA1 Bulk 1
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    Rochester Electronics SPA11N60C3XKSA1 500 1
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    EBV Elektronik SPA11N60C3XKSA1 16 Weeks 500
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    Win Source Electronics SPA11N60C3XKSA1 5,690
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    Infineon Technologies AG SPA11N60C3IN

    MOSFET N-CH 650V 11A TO220-3-31
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    DigiKey SPA11N60C3IN Tube 500
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    Infineon Technologies AG SPW11N60C3FKSA1

    MOSFET N-CH 650V 11A TO247-3
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    Rochester Electronics SPW11N60C3FKSA1 262,421 1
    • 1 $1.74
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    Find more 11N60C price and stock on Findchips.com

    11N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N60CFD

    Abstract: SPW11N60CFD 11N60C
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3

    11n60c3

    Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C

    11N60CFD

    Abstract: SPI11N60CFD SPP11N60CFD
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPI11N60CFD PG-TO262 11N60CFD PG-TO-262-3-1 11N60CFD SPI11N60CFD SPP11N60CFD

    11n60cfd

    Abstract: SPW11N60CFD 11N6
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6

    SPA11N60C2

    Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
    Text: Preliminary data 11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4332 11N60C2 SPA11N60C2 AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60

    STR 6750

    Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
    Text: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board


    Original     		PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout

    11n60c3

    Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
    Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3

    11n60cfd

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd

    Untitled

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V  Ultra low gate charge


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1

    SPD06S60

    Abstract: 11N60C3 transistor 11n60c3
    Text: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 SPD06S60 11N60C3 transistor 11n60c3

    11n60cfd

    Abstract: PG-TO-220-3-1 SPP11N60CFD
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD 11n60cfd PG-TO-220-3-1 SPP11N60CFD

    11n60c3

    Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3
    Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPD06S60 transistor 11n60c3

    11N60C

    Abstract: 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD 11N60C 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1

    11n60c3

    Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
    Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 SPA11N60C3E8185 11N60C SPA11N60C3 equivalent 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3

    11n60cfd

    Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172
    Text: 11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172

    11n60c2

    Abstract: SPW11N60C2 SDP06S60
    Text: 11N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances


    Original     		PDF SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11n60c2 SPW11N60C2 SDP06S60

    Untitled

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD

    11N60C

    Abstract: 11N60CFD
    Text: 11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11N60C 11N60CFD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3

    11N60C3

    Abstract: 11N60C SPW11N60C3 AR1010
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11N60C3 11N60C SPW11N60C3 AR1010