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Rochester Electronics LLC SPW11N60C3FKSA1 MOSFET N-CH 650V 11A TO247-3
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DigiKey	SPW11N60C3FKSA1	Tube	262,381		176	1 - 10 - 100 - 1000 $1.71 10000 $1.71	Buy Now
Rochester Electronics LLC IPI11N60C3AAKSA2 IPI11N60C3 - AUTOMOTIVE MOSFET
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DigiKey	IPI11N60C3AAKSA2	Bulk	21,902		96	1 - 10 - 100 $3.13 1000 $3.13 10000 $3.13	Buy Now
Rochester Electronics LLC SPW11N60CFDFKSA1 POWER FIELD-EFFECT TRANSISTOR, 1
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DigiKey	SPW11N60CFDFKSA1	Bulk	4,250		169	1 - 10 - 100 - 1000 $1.78 10000 $1.78	Buy Now
Infineon Technologies AG SPB11N60C3ATMA1 MOSFET N-CH 650V 11A TO263-3
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DigiKey ()	SPB11N60C3ATMA1	Cut Tape	3,214		1	1 $4.18 10 $2.751 100 $1.9392 1000 $1.76012 10000 $1.76012	Buy Now
	SPB11N60C3ATMA1	Digi-Reel	3,214		1	1 $4.18 10 $2.751 100 $1.9392 1000 $1.76012 10000 $1.76012	Buy Now
	SPB11N60C3ATMA1	Reel	2,000		1,000	1 - 10 - 100 - 1000 $1.438 10000 $1.438	Buy Now
Avnet Americas ()	SPB11N60C3ATMA1	Bulk		32 Weeks, 4 Days	1	1 $3.66 10 $2.92 100 $2.16 1000 $2.16 10000 $2.16	Buy Now
	SPB11N60C3ATMA1	Reel		15 Weeks	1,000	1 - 10 - 100 - 1000 $0.7987 10000 $0.744	Buy Now
Newark	SPB11N60C3ATMA1	Bulk	1,839		1	1 $1.37 10 $1.37 100 $1.37 1000 $1.37 10000 $1.37	Buy Now
EBV Elektronik	SPB11N60C3ATMA1			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC SPI11N60C3XKSA1 SPI11N60C3 - 600V COOLMOS N-CHAN
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DigiKey	SPI11N60C3XKSA1	Bulk	2,500		217	1 - 10 - 100 - 1000 $1.38 10000 $1.38	Buy Now

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11N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11N60CFD Abstract: SPW11N60CFD 11N60C Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C	PDF
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3	PDF
Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3	PDF
11n60c3 Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C	PDF
11N60CFD Abstract: SPI11N60CFD SPP11N60CFD Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability	Original	SPI11N60CFD PG-TO262 11N60CFD PG-TO-262-3-1 11N60CFD SPI11N60CFD SPP11N60CFD	PDF
11n60cfd Abstract: SPW11N60CFD 11N6 Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6	PDF
SPA11N60C2 Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60 Contextual Info: Preliminary data 11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated	Original	SPA11N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4332 11N60C2 SPA11N60C2 AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60	PDF
STR 6750 Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout Contextual Info: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board	Original	AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout	PDF
11n60c3 Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185 Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3	PDF
11n60cfd Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd	PDF
Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618	PDF
Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3	PDF
Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V Ultra low gate charge	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1	PDF
SPD06S60 Abstract: 11N60C3 transistor 11n60c3 Contextual Info: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 SPD06S60 11N60C3 transistor 11n60c3	PDF

11n60cfd Abstract: PG-TO-220-3-1 SPP11N60CFD Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD 11n60cfd PG-TO-220-3-1 SPP11N60CFD	PDF
11n60c3 Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3 Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPD06S60 transistor 11n60c3	PDF
11N60C Abstract: 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1 Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD 11N60C 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1	PDF
11n60c3 Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3 Contextual Info: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 SPA11N60C3E8185 11N60C SPA11N60C3 equivalent 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3	PDF
11n60cfd Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172 Contextual Info: 11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172	PDF
11n60c2 Abstract: SPW11N60C2 SDP06S60 Contextual Info: 11N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances	Original	SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11n60c2 SPW11N60C2 SDP06S60	PDF
Contextual Info: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD	PDF
11N60C Abstract: 11N60CFD Contextual Info: 11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11N60C 11N60CFD	PDF
Contextual Info: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3	PDF
11N60C3 Abstract: 11N60C SPW11N60C3 AR1010 Contextual Info: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11N60C3 11N60C SPW11N60C3 AR1010	PDF

11N60C Search Results

11N60C Price and Stock

Rochester Electronics LLC SPW11N60C3FKSA1

Rochester Electronics LLC IPI11N60C3AAKSA2

Rochester Electronics LLC SPW11N60CFDFKSA1

Infineon Technologies AG SPB11N60C3ATMA1

Rochester Electronics LLC SPI11N60C3XKSA1

11N60C Datasheets Context Search

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SPA11N60C2

STR 6750

11n60c3

11n60cfd

SPD06S60

11n60cfd

11n60c3

11N60C

11n60c3

11n60cfd

11n60c2

11N60C

11N60C3