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    11N80C3 Price and Stock

    Infineon Technologies AG SPP11N80C3XKSA1

    MOSFET N-CH 800V 11A TO220-3
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    DigiKey SPP11N80C3XKSA1 Tube 3,951 1
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    Infineon Technologies AG SPA11N80C3XKSA1

    MOSFET N-CH 800V 11A TO220-FP
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    DigiKey SPA11N80C3XKSA1 Tube 2,433 1
    • 1 $3.85
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    Avnet Americas SPA11N80C3XKSA1 Bulk 16 Weeks, 3 Days 1
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    Mouser Electronics SPA11N80C3XKSA1 200
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    Infineon Technologies AG SPW11N80C3FKSA1

    MOSFET N-CH 800V 11A TO247-3
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    DigiKey SPW11N80C3FKSA1 Tube 1,126 1
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    Mouser Electronics SPW11N80C3FKSA1 251
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    Infineon Technologies AG SPA11N80C3XKSA2

    MOSFET N-CH 800V 11A TO220-3
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    DigiKey SPA11N80C3XKSA2 Tube 194 1
    • 1 $3.85
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    Avnet Americas SPA11N80C3XKSA2 Tube 15 Weeks 500
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    Mouser Electronics SPA11N80C3XKSA2 387
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    Infineon Technologies AG SPA11N80C3XK

    Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA11N80C3XKSA1)
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    Avnet Americas SPA11N80C3XK Tube 15 Weeks 500
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    Find more 11N80C3 price and stock on Findchips.com

    11N80C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11n80c3

    Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
    Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type 11N80C3 Package P-TO247


    Original     		PDF SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11n80c3 Q67040-S4440 11n80c SPW11N80C3 80011a 11n80

    11n80c3

    Abstract: SPA11N80C3
    Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3

    SPA11N80C3

    Abstract: No abstract text available
    Text: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3

    11n80c3

    Abstract: No abstract text available
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 11n80c3

    11N80C3

    Abstract: No abstract text available
    Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3 11N80C3

    MOSFET 11N80c3

    Abstract: MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPW11N80C3 PG-TO247-3 11N80C3 MOSFET 11N80c3 MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R

    MOSFET 11N80c3

    Abstract: 11N80
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80

    Untitled

    Abstract: No abstract text available
    Text: 11N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package


    Original     		PDF SPW11N80C3 P-TO247 Q67040-S4440 11N80C3

    11N80C3

    Abstract: 11n80c
    Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4438 11N80C3 11n80c

    Q67040-S4440

    Abstract: 11N80C3 11N8
    Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking


    Original     		PDF SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 Q67040-S4440 11N80C3 11N8

    11n80c3

    Abstract: No abstract text available
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 11n80c3

    11n80c3

    Abstract: SPA11N80C3 SPP11N80C3 80011a 11n80c
    Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3 SPP11N80C3 80011a 11n80c

    MOSFET 11N80c3

    Abstract: MOSFET 11N80c3 Data sheet 11N80C3 11n80c 11N80 JESD22 SPW11N80C3 PG-TO247 11N8 PG-TO-247-3
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPW11N80C3 PG-TO247-3 11N80C3 009-134-A O-247 PG-TO247-3 MOSFET 11N80c3 MOSFET 11N80c3 Data sheet 11N80C3 11n80c 11N80 JESD22 SPW11N80C3 PG-TO247 11N8 PG-TO-247-3

    11N80C3

    Abstract: No abstract text available
    Text: 11N80C3 11N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3

    Q67040-S4439

    Abstract: No abstract text available
    Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA11N80C3 11N80C3 11N80C3 Q67040-S4439

    MOSFET 11N80c3

    Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220FP 11N80C3 MOSFET 11N80c3 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22

    MOSFET 11N80c3

    Abstract: 11n80c3
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPW11N80C3 PG-TO247-3 11N80C3 MOSFET 11N80c3 11n80c3

    11n80c

    Abstract: 11N80C3 SPP11N80C3 max8210
    Text: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated


    Original     		PDF SPP11N80C3 P-TO220-3-1 Q67040-S4438 11N80C3 11n80c 11N80C3 SPP11N80C3 max8210

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    11N80C3

    Abstract: SPW11N80C3
    Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package


    Original     		PDF SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11N80C3 SPW11N80C3

    11n80c3

    Abstract: SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET PG-TO220-3-31
    Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET

    MOSFET 11N80c3

    Abstract: 11N80C3 11n80c 11N80 SPP11N80C3 JESD22 PG-TO220-3
    Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80C3 11n80c 11N80 SPP11N80C3 JESD22 PG-TO220-3

    11N80C3

    Abstract: 11n80c SPA11N80C3 3C100 SPP11N80C3
    Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA11N80C3 11N80C3 11N80C3 11n80c 3C100