11SEP09 Search Results

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 R E LE A S E D FOR PU B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . - ,- LOC A LL R IG H T S R E S E R V E D . RE VIS IO NS D IS T H D E S C R IP T IO N D1 E C R — 0 6 — 0 0 2 6 3 5

diode ES2J

Abstract: ES2J
Contextual Info: ES2A Thru ES2J Surface Mount Super Fast Rectifiers REVERSE VOLTAGE 50 TO 600 VOLTS FORWARD CURRENT 2.0 AMPERE P b Lead Pb -Free Features: * For Surface Mount Application * Low Reverse Current * High Current Capability Mechanical Data: * Case : Molded Plastic

6242E

Abstract: 4583 dual schmitt trigger 6242b la 4508 ic pin diagram R1100D121C AT91Bootstrap CS 5609 ARM926EJ-S ISO7816 5609 dec
Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer

GMF05C-HSF

Abstract: LLP75-6L LLP75
Contextual Info: GMF05C-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Surge immunity acc. IEC 61000-4-5 IPPM > 12 A • Low leakage current IR < 1 A

VBUS051BD-HD1

Abstract: LLP1006-2L VBUS051BD esdprotection
Contextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package

b 103g

Abstract: a 103g b 104g A 102G st65w423 101G 103G 105G 106G HER101G
Contextual Info: HER101G thru HER107G High Efficiency Rectifier Glass Passivation Junction REVERSE VOLTAGE 50-1000 VOLTS FORWARD CURRENT 1.0 AMPERE P b Lead Pb -Free Features: *Low forward voltage drop *High current capability *High reliability *High surge current capability

303G

Abstract: diode HER 303G 305G 307g HER307g 302G 304G HER301G 11SEP
Contextual Info: HER301G thru HER307G High Efficiency Rectifier Glass Passivation Junction REVERSE VOLTAGE 50-1000 VOLTS FORWARD CURRENT 3.0 AMPERE P b Lead Pb -Free Features: *Low forward voltage drop *High current capability *High reliability *High surge current capability

Contextual Info: VCUT0714A-02Z Vishay Semiconductors Bidirectional Asymmetrical BiAs Single Line ESD-Protection Diode in SOD923 FEATURES • Tiny SOD-923 package • Package height < 0.4 mm 2 1 • Working range - 7 V up to + 14 V or - 14 V up to +7V • Low leakage current IR < 0.1 µA

Contextual Info: 4.5-10.5 GHz GaAs MMIC Receiver R1011-BD September 2009 - Rev 11-Sep-09 Features Integrated LNA, Mixer and LO Buffer Amp 1.6 dB Noise Figure 14.0 dB Conversion Gain BCB Coated Die 100% RF, DC and NF Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

6242E

Abstract: ARM926EJ-S ISO7816 BMS controllers
Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer

Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer

XR1011-BD

Abstract: R1011-BD DM6030HK TS3332LD
Contextual Info: 4.5-10.5 GHz GaAs MMIC Receiver R1011-BD September 2009 - Rev 11-Sep-09 Features Integrated LNA, Mixer and LO Buffer Amp 1.6 dB Noise Figure 14.0 dB Conversion Gain BCB Coated Die 100% RF, DC and NF Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

DTRU - 19

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 R E LE A S E D FOR PU B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . - ,- LOC A LL R IG H T S R E S E R V E D . REVISION S D IS T H D E S C R IP T IO N ECR—0 6 —0 0 2 6 3 5 D2 REVISED PER E C O - 0 9 - 0 2 1 5 1 0

VDC to dbm conversion

Contextual Info: 17.0-34.0 GHz GaAs MMIC Up-Converter U1010-BD September 2009 - Rev 11-Sep-09 Features Integrated Balanced Mixer, LO Buffer and LO Doubler +23.0 dBm Input Third Order Intercept IIP3 +2.0 dBm LO Drive Level 100% On-Wafer RF Testing General Description Mimix Broadband’s 17.0-34.0 GHz GaAs up-converter