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    Littelfuse Inc V11X195E

    VARISTOR 300V 6.0KA DISC 14MM
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    Lumileds L2C5-30901211X19B0

    LED COB WM WH SQUARE 3000K
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    NIC Components Corp NANE11X195WTJW2R450G2MF

    Wi-Fi dual/triband - Bulk (Alt: NANE11X195WTJW2R45)
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    Avnet Americas NANE11X195WTJW2R450G2MF Bulk 100
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    Browning (Bearings) H8011X 1 9/16

    FINISHED BORE SPROCKETS | Browning H8011X 1 9/16
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    RS H8011X 1 9/16 Bulk 2 Weeks 1
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    NKK Switches YB26WCKW01

    Pushbutton Switches ON-ON RND BUSH MNT SWTCH BODY ONLY IP65
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    TTI YB26WCKW01 Bulk 25 1
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    11X19 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE DDR2 SDRam 128Mx72-BGA 3D2D8G72UB3369 DDR2 Synchronous Dynamic Ram 8Gbit DDR2 SDRam organized as 128Mx72, based on 128Mx16 MODULE Pin Assignment Top View BGA 208 - (11x19 - Pitch 1.00mm) (TOP VIEW - VIEWED BY TRANSPARENCY) 11 10 9 8 7 6 5 4


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    PDF 128Mx72-BGA 3D2D8G72UB3369 128Mx72, 128Mx16 11x19 128Mx72 MMXX00000000XXX 3DFP-0369-REV

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE DDR2 SDRam 64Mx72-BGA 3D2D4G72UB3416 DDR2 Synchronous Dynamic Ram 4Gbit DDR2 SDRam organized as 64Mx72, based on 64Mx16 MODULE Pin Assignment Top View BGA 208 - (11x19 - Pitch 1.00mm) (TOP VIEW - VIEWED BY TRANSPARENCY) 11 10 9 8 7 6 5 4 3


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    PDF 64Mx72-BGA 3D2D4G72UB3416 64Mx72, 64Mx16 11x19 64Mx72 MMXX00000000XXX 3DFP-0416-REV

    K7Z327285M

    Abstract: No abstract text available
    Text: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM


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    PDF K7Z327285M 512Kx72 512Kx72 11x19 00x10 00x18 K7Z327285M

    K7N327245M

    Abstract: K7N327249M
    Text: Preliminary 512Kx72 Pipelined NtRAMTM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25


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    PDF 512Kx72 K7N327245M 512Kx72-Bit K7N327249M 11x19 K7N327245M

    CXK79M36C163GB

    Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5
    Text: SONY ΣRAM CXK79M36C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 33/4/5 Preliminary Description The CXK79M36C163GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM™ devices. It integrates input registers,


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    PDF CXK79M36C163GB 512Kb CXK79M36C163GB CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5

    256Kx72

    Abstract: EP-3 ae2a
    Text: Preliminary 256Kx72 Double Late Write SigmaRAMTM K7N167285A 256Kx72-Bit Pipelined SigmaRAMTM FEATURES GENERAL DESCRIPTION • Double Late Write mode , Pipelined Read mode. • 1.8V+150/-100 mV Power Supply. • 1.8V I/O supply. • Byte Writable Function.


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    PDF 256Kx72 K7N167285A 256Kx72-Bit 209BGA 11x19 K7N167285A 368-bits EP-3 ae2a

    CXK79M36C160GB

    Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
    Text: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words


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    PDF CXK79M72C160GB CXK79M36C160GB 256Kb 512Kb CXK79M72C160GB CXK79M36C160GB CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5

    M5M5T5672TG-20

    Abstract: a01-824
    Text: Renesas LSIs M5M5T5672TG – 20 Preliminary Notice: This is not final specification. Some parametric limits are subject to change. 18874368-BIT 262144-WORD BY 72-BIT NETWORK SRAM DESCRIPTION The M5M5T5672TG is a family of 18M bit synchronous SRAMs organized as 262144-words by 72-bit. It is designed to eliminate


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    PDF M5M5T5672TG 18874368-BIT 262144-WORD 72-BIT) M5M5T5672TG 262144-words 72-bit. REJ03C0072 M5M5T5672TG-20 a01-824

    CXK79M72C164GB-33

    Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
    Text: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36


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    PDF CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 256Kb 512Kb IDD-33 IDD-44 CXK79M72C164GB-33 CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5

    Untitled

    Abstract: No abstract text available
    Text: IS61LSCS25672 IS61LSCS51236 ISSI SRAM 256K X 72, 512K X 36 ADVANCE INFORMATION JUNE 2002 18MB SYNCHRONOUS SRAM FEATURES • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V


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    PDF IS61LSCS25672 IS61LSCS51236 IS61LSCS51236 IS61LSCS25672-200B IS61LSCS25672-225B IS61LSCS25672-250B IS61LSCS25672-300B IS61LSCS25672-333B IS61LSCS51236-200B

    Untitled

    Abstract: No abstract text available
    Text: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB ΣRAMs: 16Mb 1x1z LVCMOS I/O 256K x 72 or 512K x 36 or 1M x 18 Organization 33/4/44 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36


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    PDF CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB CXK79M72C165GB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25


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    PDF K7N327245M 512Kx72-Bit 512Kx72 K7N327249M K7N327245M 11x19 00x10

    tc-l 11w

    Abstract: K7N167245A K7N167249A
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.


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    PDF 256Kx72 K7N167245A 256Kx72-Bit K7N167249A K7N167245A. 11x19 tc-l 11w K7N167245A

    bwh series

    Abstract: ECHO schematic diagrams
    Text: MITSUBISHI LSIs 2001.May Rev.0.1 M5M5Y5672TG – 25,22,20 Advanced Information Notice: This is not final specification. Some parametric limits are subject to change. 18874368-BIT 262144-WORD BY 72-BIT NETWORK SRAM DESCRIPTION The M5M5Y5672TG is a family of 18M bit synchronous SRAMs


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    PDF M5M5Y5672TG 18874368-BIT 262144-WORD 72-BIT) M5M5Y5672TG 262144-words 72-bit. bwh series ECHO schematic diagrams

    CC2500

    Abstract: No abstract text available
    Text: Anaren Integrated Radio AIR Low-power R F modules, firmware & development tools that make it easy to ’go wireless’ BoosterPack Series The A2541R24A-ADB1 B-SMART BoosterPack kit is a development tool designed for use with the TI MSP430TM Value Line, TiVA-C, C2000 and other LaunchPad kits. The kit eases


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    PDF A2541R24A-ADB1 MSP430TM C2000 A2541R24A20 CC2541 A2541R24A-ADB1 A2541R24A CC1101, CC2500, CC2530, CC2500

    CCATS

    Abstract: No abstract text available
    Text: Anaren Integrated Radio AIR Low-power RF modules, firmware & development tools that make it easy to ’go wireless’ BoosterPack Series The A2530E24A-LPZ is an AIR Module BoosterPack kit for the MSP430TM Value Line or Tiva C LaunchPad Development Kit. This kit eases the development of products


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    PDF A2530E24A-LPZ MSP430TM A2530E24AZ1 CC2530 CC2591 A2530E24A-LPZ A2530E24A CC2530, CC2591, MSP430 CCATS

    Untitled

    Abstract: No abstract text available
    Text: Anaren Integrated Radio AIR Low-power RF modules, firmware & development tools that make it easy to ’go wireless’ 2541 System on Chip Series The A2541R24C is a surface-mount radio module featuring Bluetooth SMART technology that incorporates the Texas Instruments ultra-low-power CC2541 SoC,


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    PDF A2541R24C CC2541 11x19x2 CC1101, CC2500, CC2530, CC8520) 100MHz) 1349a

    306FSR300XZ2BW

    Abstract: No abstract text available
    Text: FEATURES Reduced case size - High voltage – Low Leakage – low dissipation Factor – JIS 2365 Compliant APPLICATIONS Emergency lights – Signal lights Operating Temperature Range Capacitance Tolerance WVDC Surge voltage SVDC Dissipation Factor tan δ


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    PDF 16x46 187FSR300XPAG 277FSR360XLAK 18x39 187FSR300XQJS 14x27 277FSR360XQDG 14x50 187FSR300XRJW 277FSR360XRCF 306FSR300XZ2BW

    BGA676

    Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
    Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18


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    PDF BGA16A1ATTERNS BGA676 BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X

    CXK79M18C160GB

    Abstract: CXK79M36C160GB CXK79M36C160GB-33 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4
    Text: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 16Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/44 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36


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    PDF CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 256Kb 512Kb CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB CXK79M36C160GB-33 CXK79M72C160GB-33 CXK79M72C160GB-4

    CXK79M18C163GB

    Abstract: CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M36C163GB CXK79M36C163GB-33 CXK79M36C163GB-4
    Text: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 16Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/44 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words


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    PDF CXK79M36C163GB CXK79M18C163GB 512Kb CXK79M36C163GB IDD-33 IDD-44 CXK79M18C163GB CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M36C163GB-33 CXK79M36C163GB-4

    a7w29

    Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5 CXK79M18C163GB CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M18C163GB-5 CXK79M36C163GB
    Text: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words


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    PDF CXK79M36C163GB CXK79M18C163GB 512Kb CXK79M36C163GB IDD-33 IDD-44 a7w29 CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5 CXK79M18C163GB CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M18C163GB-5

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs September 3, 2002 Rev.0.7 M5M5Y5672TG – 25,22,20 Preliminary Notice: This is not final specification. Some parametric limits are subject to change. 18874368-BIT 262144-WORD BY 72-BIT NETWORK SRAM DESCRIPTION FUNCTION The M5M5Y5672TG is a family of 18M bit synchronous SRAMs


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    PDF M5M5Y5672TG 18874368-BIT 262144-WORD 72-BIT) M5M5Y5672TG 262144-words 72-bit.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 2002. July Rev.0.4 M5M5Y5636TG – 25,22,20 Preliminary Notice: This is not final specification. Some parametric limits are subject to change. 18874368-BIT 524288-WORD BY 36-BIT NETWORK SRAM DESCRIPTION FUNCTION The M5M5Y5636TG is a family of 18M bit synchronous SRAMs


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    PDF M5M5Y5636TG 18874368-BIT 524288-WORD 36-BIT) M5M5Y5636TG 524288-words 36-bit.