1200 - 1400 MHZ, L-BAND APPLICATIONS Search Results

L-Band 1200-1400 MHz

Abstract: diode gp 429 Radar x band radar HV400
Contextual Info: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor

transistor s 1014

Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Contextual Info: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor

ALR006

Abstract: ASI10510
Contextual Info: ALR006 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz • Omnigold Metalization System MAXIMUM RATINGS

"RF Power Transistor"

Abstract: 1200 - 1400 MHz L-Band Applications RZ1214B35Y
Contextual Info: RZ1214B35Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B35Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 35 W/ 1400 MHz • Omnigold Metalization System

RZ1214B65Y

Abstract: "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ
Contextual Info: RZ1214B65Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B65Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 80 W/1400 MHz • Omnigold Metalization System

ALR100

Abstract: ASI10514
Contextual Info: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L DESCRIPTION: N J O A 1 B The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. D 2 3 M FEATURES: F • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz

ALR100

Abstract: ASI10514
Contextual Info: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. O A B E K D FEATURES: C G • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz

AM81214-060

Contextual Info: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 6.6 dB at 55 W/1400 MHz • Omnigold Metalization System

GROUND BASED RADAR

Abstract: transistor SMD R1D
Contextual Info: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications

MIL-STD-750D

Abstract: L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVV1214-25 HVVi Semiconductors
Contextual Info: HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION PACKAGE The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from

ALR006

Abstract: ASI10510 transistor 306 x
Contextual Info: ALR006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz

ALR060

Abstract: ASI10513
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz

ALR015

Abstract: ASI10511
Contextual Info: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR015 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.5 dB at 15 W/1400 MHz

ALR060

Abstract: ASI10513 1402 Transistor
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

HVV1214-140

Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Contextual Info: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain

L-Band 1200-1400 MHz

Abstract: 4884 MOSFET HVV1214-100 radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET
Contextual Info: The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty For Ground Based Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

j152

Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
Contextual Info: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

L-Band 1200-1400 MHz

Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
Contextual Info: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description

ATC100B390

Contextual Info: STAC1214-250 LDMOS L-band radar transistor Datasheet - preliminary data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 14 dB gain over 1200 1400 MHz • ST air cavity / STAC package Description STAC265B