1200MM2 Search Results

A1723

Abstract: smd transistor 26 KPA1716 40A19
Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1716 Features Low on-state resistance RDS on 1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP.

Contextual Info: ECH8671 Ordering number : ENA1456A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8671 General-Purpose Switching Device Applications Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications

EMH1402

Contextual Info: EMH1402 Ordering number : EN8723 N-Channel Silicon MOSFET EMH1402 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage

TND017MP

Abstract: TND017SW tA318
Contextual Info: Ordering number:ENN6481A ExPD Excellent Power Device TND017MP, TND017SW Lowside Power Switch Lamp, Solenoid, and Motor-Driving Applications Package Dimensions Unit:mm 2145 Unit:mm 2181 [TND017MP] [TND017SW] 8 6.0 5.0 5 3.0 0.5 0.6 6.0 4.4 0.3 4.7 4 1.5 14.0

a0923

Abstract: CPH6337
Contextual Info: CPH6337 Ordering number : ENA0923 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6337 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: MCH6438 Ordering number : ENA0889 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6438 General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

Contextual Info: Ordering number : ENA1436A ECH8674 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 41mΩ, Single ECH8 Features • • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications

Contextual Info: Ordering number : ENA2185B ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS on 1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in

EMH1303

Contextual Info: EMH1303 Ordering number : ENA0661 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH1303 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

MCH6321

Contextual Info: MCH6321 Ordering number : ENA0963 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6321 General-Purpose Switching Device Applications Features • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

MCH6337

Contextual Info: MCH6337 Ordering number : ENA0959 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6337 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1708 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 switch.

PA1723

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MarKING JS

Contextual Info: Ordering number : ENN7026 CPH6316 P-Channel Silicon MOSFET CPH6316 High-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. High-speed switching. 4V drive. unit : mm 2151A [CPH6316] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6 2.8 0.05

A1667

Abstract: ENA1667A mosfet marking ke
Contextual Info: EMH1405 Ordering number : ENA1667A SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on 1=14mΩ(typ) 4V drive Halogen free compliance Protection diode in

a0923

Contextual Info: CPH6337 Ordering number : ENA0923A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6337 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter

ic 74373

Abstract: 74371 IC 74374 74372
Contextual Info: TND027SW, 027TD Ordering number : EN7437B SANYO Semiconductors DATA SHEET TND027SW TND027TD ExPD Excellent Power Device Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications Features • • • • • N-channel MOSFET built in. Overheat protection. (Self recovery type)

A1776

Contextual Info: MCH6437 Ordering number : ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6437 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C

FSS212

Contextual Info: Ordering number:ENN5933 N-Channel Silicon MOSFET FSS212 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS212] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain

PA1706

Abstract: UPA1706G
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1706 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management 8 5 applications of notebook computers.

marking s104

Abstract: s104 diode S104 FSS104
Contextual Info: Ordering number:ENN5991A P-Channel Silicon MOSFET FSS104 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS104] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source

Contextual Info: Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET http://onsemi.com –20V, –6.5A, 26mΩ, Single EMH8 Features • • • ON-resistance RDS on 1 : 20mΩ(typ.) 1.8V drive Protection diode in • • Input Capacitance Ciss=1100pF(typ.) Halogen free compliance

VEC2818

Contextual Info: VEC2818 注文コード No. N A 0 5 7 7 三洋半導体データシート N VEC2818 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。