FGA20N120FTD
Abstract: No abstract text available
Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V
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FGA20N120FTD
FGA20N120FTD
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXYP20N120C3
IXYH20N120C3
108ns
O-220
20N120C3
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fga20s120m
Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
Text: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This
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FGA20S120M
fga20s120m
600v 20a IGBT
1200v 20a IGBT
DIODE GE 20a
igbt 20A 1200v
12v igbt 20a
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FGA20N120
Abstract: FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A FGA20N120FTD igbt 20A 1200v 12v igbt 20a
Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGA20N120FTD
FGA20N120FTD
FGA20N120
FGA20N120FTDTU
1200v 20a IGBT
600v 20a IGBT
igbt 1200V 20A
igbt 20A 1200v
12v igbt 20a
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IXYP20N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYP20N120C3
IXYH20N120C3
IC110
O-220
108ns
O-247
20N120C3
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Untitled
Abstract: No abstract text available
Text: IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat tfi(typ) = 1200V 20A 3.4V 108ns TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYA20N120C3HV
IXYP20N120C3
IXYH20N120C3
IC110
108ns
O-263HV
20N120C3
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20N120A3
Abstract: IXGH24N120C3 20N120 G20N120
Text: Preliminary Technical Information VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 GenX3TM 1200V IGBT Ultra-low Vsat PT IGBTs for up to 3 kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXGA20N120A3
IXGH20N120A3
IXGP20N120A3
O-263
O-220
20N120A3
IXGH24N120C3
20N120
G20N120
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA20N120B3
IXGP20N120B3
O-263
20N120B3
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IXGP20N120B3
Abstract: IXGP20N120B IXGA20N120B3 IXGA20N120B
Text: Preliminary Technical Information VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA20N120B3
IXGP20N120B3
O-263
20N120B3
IXGP20N120B3
IXGP20N120B
IXGA20N120B3
IXGA20N120B
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G20N120
Abstract: IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Text: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
O-263
O-220AB
20N120A3
G20N120
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
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Untitled
Abstract: No abstract text available
Text: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
O-263
O-220AB
20N120A3
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BSM20GP60
Abstract: BSM35GP120 BSM25GP120 BSM50GP120 BSM15GP120 IGBT 600v 20a 600v 20a IGBT 600v 20a IGBT driver BSM30GP60 FP50R12KS4C
Text: power the Home Products PIM News Contact Editorials Job Offers Company Search Site Content IGBT Modules . . . . . . . . . . . 10A 15A 20A 25A 30A 35A 35A 50A 50A 75A 100A IGBT Driver 600V Low Loss 1200V Low Loss BSM10GP60 BSM15GP60 BSM20GP60 BSM10GP120 BSM15GP120
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BSM10GP60
BSM15GP60
BSM20GP60
BSM10GP120
BSM15GP120
BSM30GP60
BSM50GP60
BSM50GP60G
BSM75GP60
BSM100GP60
BSM20GP60
BSM35GP120
BSM25GP120
BSM50GP120
BSM15GP120
IGBT 600v 20a
600v 20a IGBT
600v 20a IGBT driver
BSM30GP60
FP50R12KS4C
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RG105
Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
RG105
ir igbt 1200V 10A
SS850
sa wf
IRGP20B120UD-E
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 20A 1200v IRGPH40S
Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A
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IRGPH40S
400Hz)
O-247AC
TRANSISTOR BIPOLAR 400V 20A
igbt 20A 1200v
IRGPH40S
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A
Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A
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IRGPH40S
400Hz)
O-247AC
TRANSISTOR BIPOLAR 400V 20A
igbt 20A 1200v
IRGPH40S
igbt 1200V 20A
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IRGP20B120UD-E
Abstract: IGBT Transistor 1200V, 25A
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
IRGP20B120UD-E
IGBT Transistor 1200V, 25A
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"VDSS 800V" 40A mosfet
Abstract: No abstract text available
Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTMC120HR11CT3G
"VDSS 800V" 40A mosfet
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FOD3150
Abstract: No abstract text available
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
200V/20A
FOD3150
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TLP250 MOSFET DRIVER
Abstract: A 3150 igbt driver TLP250 igbt driver applications TLP250 mosfet gate Driver fod3120 fod3120 applications TLP250 MOSFET DRIVER application note FOD3150 IGBT driver hcpl3120 3120 v IGBT DRIVER
Text: FOD3120 and FOD3150 High Speed MOSFET/IGBT Gate Drive Optocouplers Fairchild’s Offering The FOD3120 and FOD3150 are 2.5A and 1.0A output current gate drive optocouplers capable of driving 1200V/20A IGBTs and MOSFETs in solar inverters, motor drives and induction heating applications. These
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FOD3120
FOD3150
FOD3150
200V/20A
100ns)
E90700,
FOD3120,
FOD3150,
FOD3180
TLP250 MOSFET DRIVER
A 3150 igbt driver
TLP250 igbt driver applications
TLP250 mosfet gate Driver
fod3120 applications
TLP250 MOSFET DRIVER application note
IGBT driver hcpl3120
3120 v IGBT DRIVER
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Untitled
Abstract: No abstract text available
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
35kV/Â
FOD3120
200V/20A
200V/20A
400ns
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FOD3150
Abstract: fod3120 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
FOD3120
200V/20A
200V/20A
400ns
100nsthout
FOD3150
FOD3150 application note
5A optocoupler
FOD3120SDV
IGBT/MOSFET Gate Drive
FOD3120S
FOD3120SD
FOD3120SV
FOD3120V
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fod3120
Abstract: 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
FOD3120
200V/20A
200V/20A
400ns
100nsthout
1200v 20a IGBT
fod3120 applications
20A igbt
FOD3120TV
FOD3120SD
FOD3150
FOD3120SDV
FOD3120V
Gate Drive Optocoupler
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK20N120P
IXFX20N120P
300ns
O-264
PLUS247
20N120P
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1 phase igbt 1200V 40A module
Abstract: APTGU20H120T3
Text: APTGU20H120T3 Full - Bridge PT IGBT Power Module VCES = 1200V IC = 20A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 Q1 CR3 CR1 18 19 Q2 22 7 23 8 CR2 26 Q3 11 Features
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APTGU20H120T3
200kHz
APTGU20H120T
1 phase igbt 1200V 40A module
APTGU20H120T3
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