1200V 20A IGBT Search Results

FGA20N120FTD

Contextual Info: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

fga20s120m

Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
Contextual Info: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This

FGA20N120

Abstract: FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A FGA20N120FTD igbt 20A 1200v 12v igbt 20a
Contextual Info: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

IXYP20N120C3

Contextual Info: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 20A 3.4V 108ns TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

20N120A3

Abstract: IXGH24N120C3 20N120 G20N120
Contextual Info: Preliminary Technical Information VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 GenX3TM 1200V IGBT Ultra-low Vsat PT IGBTs for up to 3 kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGP20N120B3

Abstract: IXGP20N120B IXGA20N120B3 IXGA20N120B
Contextual Info: Preliminary Technical Information VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

G20N120

Abstract: IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

BSM20GP60

Abstract: BSM35GP120 BSM25GP120 BSM50GP120 BSM15GP120 IGBT 600v 20a 600v 20a IGBT 600v 20a IGBT driver BSM30GP60 FP50R12KS4C
Contextual Info: power the Home Products PIM News Contact Editorials Job Offers Company Search Site Content IGBT Modules . . . . . . . . . . . 10A 15A 20A 25A 30A 35A 35A 50A 50A 75A 100A IGBT Driver 600V Low Loss 1200V Low Loss BSM10GP60 BSM15GP60 BSM20GP60 BSM10GP120 BSM15GP120

RG105

Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 20A 1200v IRGPH40S
Contextual Info: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A
Contextual Info: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A

IRGP20B120UD-E

Abstract: IGBT Transistor 1200V, 25A
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

"VDSS 800V" 40A mosfet

Contextual Info: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

FOD3150

Contextual Info: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching

TLP250 MOSFET DRIVER

Abstract: A 3150 igbt driver TLP250 igbt driver applications TLP250 mosfet gate Driver fod3120 fod3120 applications TLP250 MOSFET DRIVER application note FOD3150 IGBT driver hcpl3120 3120 v IGBT DRIVER
Contextual Info: FOD3120 and FOD3150 High Speed MOSFET/IGBT Gate Drive Optocouplers Fairchild’s Offering The FOD3120 and FOD3150 are 2.5A and 1.0A output current gate drive optocouplers capable of driving 1200V/20A IGBTs and MOSFETs in solar inverters, motor drives and induction heating applications. These

Contextual Info: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching

FOD3150

Abstract: fod3120 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V
Contextual Info: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching

fod3120

Abstract: 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler
Contextual Info: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings

1 phase igbt 1200V 40A module

Abstract: APTGU20H120T3
Contextual Info: APTGU20H120T3 Full - Bridge PT IGBT Power Module VCES = 1200V IC = 20A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 Q1 CR3 CR1 18 19 Q2 22 7 23 8 CR2 26 Q3 11 Features