1200V MOSFET Search Results

M81738FP

Abstract: half bridge driver
Contextual Info: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES Floating supply voltage up to 1200V Low quiescent power supply current

M81019FP

Abstract: M81738FP M81738 M81019 inverter igbt circuit diagrams in bridge
Contextual Info: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ●Floating supply voltage up to 1200V ● Low quiescent power supply current

Contextual Info: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter

Contextual Info: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter

Contextual Info: V23990-P629-L63-PM flow BOOST 0 1200V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications

V23990-P629

Abstract: V23990-P629-F62-PM
Contextual Info: V23990-P629-F62-PM / V23990-P629-F629-PM V23990-P629-F628Y-PM / V23990-P629-F629Y-PM flow BOOST 0 1200V/40A Features flow0 12mm and 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode

M81019FP

Abstract: m81019 dv/dt HVIC high voltage diodes Inverter high voltage power transistor Driver high side igbt 1200V Half Bridge Driver micro inverter
Contextual Info: MITSUBISHI SEMICONDUCTORS <HVIC> M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 NC 1 FEATURES ¡Floating supply voltage up to 1200V

Contextual Info: MITSUBISHI SEMICONDUCTORS <HVIC> M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 NC 1 FEATURES ¡Floating supply voltage up to 1200V

HGT1S15N120C3

Abstract: HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C
Contextual Info: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching

5n120

Abstract: diode zener 22A STP5N120 JESD97
Contextual Info: STP5N120 N-channel 1200V - 2.8Ω - 4.4A - TO-220 Zener - protected SuperMESH Power MOSFET TARGET SPECIFICATION Features Type VDSS RDS on ID PW STP5N120 1200V < 3.5 Ω 4.4A 160W • 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability

JESD97

Abstract: STP1N120 P1N120
Contextual Info: STP1N120 N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PW STP1N120 1200V < 38Ω 500mA 45W • 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability

15N120C3D

Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C
Contextual Info: HGTG15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance

RHR75120

Abstract: RHR75120C TO-264-aa RHR1Y75120CC TA49042
Contextual Info: RHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft R ecovery. <85ns • Operating Tem p eratu re. . . +175 C • Reverse V oltag e. .1200V JEDEC TO-264AA ANODE 2

Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYR100N120C3 (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES

1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR

100N120C3

Contextual Info: Advance Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR

IXGH24N120C3

Abstract: ixga24N120 IC100 24N120C3 IXGP24N120C3 24N120
Contextual Info: Preliminary Technical Information VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR

LN-100

Abstract: diode Marking code v3 LN100
Contextual Info: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages

15N120C3D

Abstract: 15N120C3 HGTG15N120C3D LD26 RHRP15120 15N120C
Contextual Info: HGTG15N120C3D S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBTs w/ Diode IXGK50N120C3H1 IXGX50N120C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1200V 50A 4.2V 64ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES

MOSFET 1200v 3a

Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Contextual Info: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with

Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

DSFP-LN100

Abstract: LN-100S diode Marking code v3 BVDSS1 high voltage shunt regulator source gate m2 ZENER DIODE
Contextual Info: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages