Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HIPERFET Search Results

    SF Impression Pixel

    HIPERFET Price and Stock

    IXYS Corporation IXFH80N65X2

    MOSFETs MOSFET 650V/80A Ultra Junction X2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFH80N65X2 Tube 900 30
    • 1 -
    • 10 -
    • 100 $8.76
    • 1000 $8.31
    • 10000 $8.31
    		Buy Now

    IXYS Corporation IXFK140N30P

    MOSFETs 140 Amps 300V 0.024 Ohms Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFK140N30P Tube 600 25
    • 1 -
    • 10 -
    • 100 $13.62
    • 1000 $13.62
    • 10000 $13.62
    		Buy Now

    IXYS Corporation IXFR36N50P

    MOSFETs 500V 36A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFR36N50P Tube 510 30
    • 1 -
    • 10 -
    • 100 $11.08
    • 1000 $11.08
    • 10000 $11.08
    		Buy Now

    IXYS Corporation IXFH180N20X3

    MOSFETs TO247 200V 180A N-CH X3CLASS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFH180N20X3 Tube 300 30
    • 1 -
    • 10 -
    • 100 $9.83
    • 1000 $9.83
    • 10000 $9.83
    		Buy Now

    IXYS Corporation IXFT220N20X3HV

    MOSFETs TO268 200V 220A N-CH X3CLASS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFT220N20X3HV Tube 300 30
    • 1 -
    • 10 -
    • 100 $13.48
    • 1000 $13.21
    • 10000 $13.21
    		Buy Now
    Find more HIPERFET price and stock on Findchips.com

    HIPERFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    34N80

    Abstract: IXFN34N80 ixfx34n80
    Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 34N80 247TM 34N80 IXFN34N80 ixfx34n80

    vmo60

    Abstract: ID100 VMO60-05F
    Text: HiPerFETTM Power Module VMO 60-05F VDSS = 500 V ID25 = 60 A RDS on = 65 mW High dv/dt, Low trr, HDMOSTM Family 1 TO-240 AA 3 6 1 5 Preliminary Data 5 6 3 1 = Drain 5 = Gate Symbol Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 10 kW


    Original     		PDF 60-05F O-240 ID100 Mountin50 vmo60 ID100 VMO60-05F

    17n80

    Abstract: 17N80Q
    Text: HiPerFETTM Power MOSFETs IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS on Q-Class = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 17N80Q O-268 728B1 123B1 728B1 065B1 17n80 17N80Q

    73N30

    Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30
    Text: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


    Original     		PDF O-264 73N30 "SOT-227 B" dimensions SOT-227 Package ixfk73n30

    58N2

    Abstract: 58N20
    Text: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 58N20Q O-268 O-268 58N2 58N20

    ixf26n50q

    Abstract: 24N50 26N50Q 125OC ixf26N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 24N50Q 26N50Q 125OC 728B1 ixf26n50q 24N50 26N50Q 125OC ixf26N50

    24N50

    Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF 26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50

    80N10

    Abstract: 80N10Q
    Text: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N10Q 200ns O-247 80N10 80N10Q

    24N100

    Abstract: 23N10 125OC
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC

    50n50

    Abstract: 55N50 150N50 IXFK55N50
    Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR


    Original     		PDF ISOPLUS247TM 50N50 55N50 247TM IXFK55N50 50N50 55N50 150N50

    60n10

    Abstract: IXTH60N10
    Text: Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		PDF 60N10 TJM15 O-268 728B1 123B1 728B1 065B1 60n10 IXTH60N10

    IXFH23N80Q

    Abstract: transistor N 343 AD
    Text: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH23N80Q IXFT23N80Q 728B1 123B1 728B1 065B1 IXFH23N80Q transistor N 343 AD

    125OC

    Abstract: 32N50Q
    Text: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 32N50Q 32N50Q 125OC 125OC

    VMO 440

    Abstract: ixys VMO 440 VMO 550-01F lb 1470 2360A
    Text: HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V = 590 A ID25 RDS on = 2.1 mW D N-Channel Enhancement Mode G E 72873 G Preliminary Data S KS S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW 100 V VGS Continuous


    Original     		PDF 550-01F VMO 440 ixys VMO 440 VMO 550-01F lb 1470 2360A

    26N50

    Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		PDF ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 26N50 IXFC 26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50

    62n25

    Abstract: 62n25 mosfet 62n2 247TM
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient


    Original     		PDF 62N25 247TM O-264 728B1 62n25 62n25 mosfet 62n2 247TM

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet


    Original     		PDF 58N20Q ISOPLUS247TM 728B1

    40N30Q

    Abstract: IXYS 40N30Q
    Text: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 40N30Q O-268 40N30Q IXYS 40N30Q

    IRM-38

    Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


    Original     		PDF O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20

    13N50

    Abstract: 125OC FIGURE10
    Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 13N50 Figure10. 125OC FIGURE10

    TF WIRE

    Abstract: vmm 90-09f ZY180L ZY180R
    Text: Advanced Technical Information VMM 90-09F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 900 V = 85 A = 76 mW Phaseleg Configuration Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C TC = 80°C


    Original     		PDF 90-09F UL758, ZY180L 350mm ZY180R TF WIRE vmm 90-09f

    IXFH15N80

    Abstract: 15n80 14N80 DS965 IXFH14N80 125OC
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 IXFH15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient


    Original     		PDF IXFH14N80 IXFH15N80 14N80 15N80 125OC 728B1 IXFH15N80 15n80 14N80 DS965 IXFH14N80 125OC

    120N25

    Abstract: ID104
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N25 ID104 247TM 728B1 120N25 ID104

    150N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15