1206 8 CHIPFET Search Results

ta811

Contextual Info: TA811 Vishay Siliconix Single-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION New Vishay Siliconix ChipFETst in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors

AN811

Abstract: 1206-8 chipfet layout 1206 pads layout 1206 8 ChipFET Resistor dimensions 1206 to mm AN812
Contextual Info: AN811 Vishay Siliconix Single-Channel 1206-8 ChipFETr Power MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION New Vishay Siliconix ChipFETs in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors and capacitors but provide all the performance of true power

1206-8 chipfet layout

Abstract: AN811 1206 footprint dimension 1206-8 chipfet 1206 pads layout so8 pcb pattern 1206 8 ChipFET 1206 footprint Resistor dimensions 1206 to mm vishay so-8 pin dimensions
Contextual Info: AN812 Vishay Siliconix Dual-Channel 1206-8 ChipFETr Power MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION New Vishay Siliconix ChipFETs in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors and capacitors but provide all the performance of true power

so8 pcb pattern

Abstract: 1206-8 chipfet layout vishay so-8 pin dimensions TA812 71127
Contextual Info: TA812 Vishay Siliconix Dual-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION New Vishay Siliconix ChipFETst in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors and capacitors but provide all the performance of true power

so8 pcb pattern

Abstract: MOSFET SO-8
Contextual Info: AN812 Vishay Siliconix Dual-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION New Vishay Siliconix ChipFETst in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors and capacitors but provide all the performance of true power

vishay 1206

Abstract: 72723 1206-8 chipfet 1206 8 ChipFET ChipFET
Contextual Info: Device Orientation Vishay Siliconix Device Orientation 1206-8 ChipFETr and PowerPAKr ChipFET DEVICE ORIENTATION Package Method 1206-8 ChipFET T1 PowerPAK ChipFET T1 User Direction of Feed Revision control of this drawing is maintained through Document Control, Pack Specification—PACK-0007-13

1206-8 chipfet

Abstract: vishay marking code 05 marking code vishay SILICONIX 1206 8 ChipFET part marking ab VISHAY MARKING CODE
Contextual Info: Part Marking Information Vishay Siliconix DEVICES: 1206-8 ChipFETr PowerPAKr ChipFET 1206-8 ChipFET and PowerPAK ChipFET D ABWLL D = Pin 1 Indicator AB = Part Number Code1, 2 W = Week Code LL = Lot Code3 NOTES: 1. See data sheet for code. 2. Factory code is denoted by bar around part number code.

Si5915BDC

Abstract: Si5915DC Si5915DC-T1
Contextual Info: Specification Comparison Vishay Siliconix Si5915BDC vs. Si5915DC Description: Package: Pin Out: Dual N-Channel 8-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5915BDC-T1-E3 Replaces Si5915DC-T1-E3 Si5915BDC-T1-E3 Replaces Si5915DC-T1

1206 8 ChipFET

Contextual Info: Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET 0.093 0.026 0.016 0.010 0.650 (0.406) (0.244) 0.036 (0.914) 0.022 (0.559) (2.032) 0.080 (2.357) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE

Si5445BDC

Abstract: Si5445DC Si5445DC-T1
Contextual Info: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: Package: Pin Out: P-Channel, 1.8-V G-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1-E3 Replaces Si5445DC-T1

Specification Comparison

Abstract: SI5406CD Si5406DC Si5406DC-T1
Contextual Info: Specification Comparison Vishay Siliconix Si5406CDC vs. Si5406DC Description: Package: Pin Out: N-Channel, 12-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5406CDC-T1-GE3 replaces Si5406DC-T1-E3 Si5406CDC-T1-GE3 replaces Si5406DC-T1

Si5504BDC

Abstract: Si5504BDC-T1-E3 si5504 transistor mosfet n-ch drain current Si5504DC Si5504DC-T1 N- and P-Channel 30-V D-S MOSFET
Contextual Info: Specification Comparison Vishay Siliconix Si5504BDC vs. Si5504DC Description: Package: Pin Out: N- and P-Channel 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5504BDC-T1-E3 Replaces Si5504DC-T1-E3 Si5504BDC-T1-E3 Replaces Si5504DC-T1

Si5404DC-T1-E3

Abstract: 1206-8 Si5404BDC Si5404BDC-T1-E3 Si5404DC Si5404DC-T1
Contextual Info: Specification Comparison Vishay Siliconix Si5404BDC vs. Si5404DC Description: N-Channel, 2.5-V G-S MOSFET Package: 1206-8 ChipFETr Pin Out: Identical Part Number Replacements: Si5404BDC-T1 Replaces Si5404DC-T1 Si5404BDC-T1—E3 (Lead (Pb)-Free version) Replaces Si5404DC-T1—E3

1206 8 ChipFET

Abstract: transistor testing M2003
Contextual Info: Package Reliability Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR 1206-8 ChipFETr Stress Sample Size Device Hr./Cyc Condition Total Fails Fail Percentage BOND INT 120 60,000 200_C + N2 0.00 Pressure Pot 165 15,840 121_, 15 PSIG 0.00 Solder DUNK

Specification Comparison

Abstract: SI5933CD Si5933DC Si5933DC-T1 Si5933DC-T1-E3 SI5933CDC
Contextual Info: Specification Comparison Vishay Siliconix Si5933CDC vs. Si5933DC Description: Package: Pin Out: Dual N-Channel 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5933CDC-T1-E3 replaces Si5933DC-T1-E3 Si5933CDC-T1-E3 replaces Si5933DC-T1

Si5902BDC

Abstract: Si5902DC Si5902DC-T1 Si5902DC-T1-E3 1010IS
Contextual Info: Specification Comparison Vishay Siliconix Si5902BDC vs. Si5902DC Description: Package: Pin Out: Dual N-Channel 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5902BDC-T1-E3 Replaces Si5902DC-T1-E3 Si5902BDC-T1-E3 Replaces Si5902DC-T1

Si5905DC

Abstract: Si5905DC-T1 MARKING CODE DB
Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

2 a diode

Abstract: Si5445DC Si5445DC-T1 71063 marking code BC
Contextual Info: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability

VISHAY BC 047

Abstract: Si5445DC Si5445DC-T1
Contextual Info: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability

Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

marking code BC

Contextual Info: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability

Si5905DC

Abstract: MARKING CODE DB
Contextual Info: Si5905DC New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.090 @ VGS = –4.5 V "4.1 0.130 @ VGS = –2.5 V "3.4 0.180 @ VGS = –1.8 V "2.9 S1 S2 1206-8 ChipFET 1 S1 D1 G1 G1 D1 G2 S2 D2 G2

Si5905DC

Abstract: Si5905DC-T1
Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

G2 Marking

Contextual Info: Si5905DC New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.090 @ VGS = –4.5 V "4.1 0.130 @ VGS = –2.5 V "3.4 0.180 @ VGS = –1.8 V "2.9 S1 S2 1206-8 ChipFET 1 S1 D1 G1 G1 D1 G2 S2 D2 G2