AN811 Search Results

AN811

Abstract: 1206-8 chipfet layout 1206 pads layout 1206 8 ChipFET Resistor dimensions 1206 to mm AN812
Contextual Info: AN811 Vishay Siliconix Single-Channel 1206-8 ChipFETr Power MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION New Vishay Siliconix ChipFETs in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors and capacitors but provide all the performance of true power

AN811

Contextual Info: AN811 Vishay Siliconix Single-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION The legs of the device are very short, again helping to reduce the thermal path to the external heatsink/pcb and allowing a

dali bridge

Abstract: PIC16F628 dali pic AN AN811 dali source code EN60929 dali power supply circuit diagram Digital addressable lighting interface DALI RS232-DALI rs-232/dali
Contextual Info: AN811 The RS-232/DALI Bridge Interface FIGURE 2: Author: INTRODUCTION The Digitally Addressable Lighting Interface DALI has emerged as a standard in Europe to address growing power issues. DALI is known as Annex E of the European electronic ballast standard EN60929 and specifically relates to digitally controlled dimmable ballasts.

1206-8 chipfet

Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition

Vishay DaTE CODE 1206-8

Abstract: AN811 SI5424DC-T1-GE3 1206-8 chipfet layout
Contextual Info: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC

marking code g1

Abstract: mil 43
Contextual Info: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V

Contextual Info: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21

Design pure sine wave inverter using transformer

Abstract: laptop LCD inverter SCHEMATIC PZT Transducer ultrasonic Sine wave PWM 1000v DC to AC Inverter Circuits laptop CCFL inverter SCHEMATIC inverter PURE SINE WAVE schematic transit time ultrasonic flow meter circuit design marine sonar 12v to 1000v inverters circuit diagrams laptop inverter ccfl
Contextual Info: Application Note 81 September 1999 Ultracompact LCD Backlight Inverters A Svelte Beast Cuts High Voltage Down to Size Jim Williams, Linear Technology Corporation Jim Phillips, Gary Vaughn, CTS Wireless Components INTRODUCTION The liquid crystal display LCD has become ubiquitous. It

mosfet 23 Tsop-6

Contextual Info: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated

AN811

Abstract: S0915
Contextual Info: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V

Contextual Info: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V

Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.

Contextual Info: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V

Contextual Info: Si5975DC Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.127 at VGS = - 2.5 V - 3.4 0.164 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition

marking code ED

Contextual Info: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V

54AIS

Contextual Info: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition

pic16f1823 example codes eusart

Abstract: IEC60929 annex E MRF24WB0MA MRF24WB0MA PIC 18 PIC16F1827 example codes C PIC16F1823 c example eusart MRF24WB0MB PIC18F23K22 IEC-60929 MRF24WB0
Contextual Info: LED Lighting Solutions Summer 2010 Adding Intelligence to Lighting Applications LED Lighting Design Guide www.microchip.com/lighting LED Lighting Solutions Table of Contents LED Lighting . 3 LED Applications . 3

Contextual Info: MB91550 Series 32-bit Microcontroller FR Family FR81S MB91F552 Data Sheet Full Production Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume

assembly code DOT LED MATRIX pic

Abstract: IEC60929 annex E IEC-60929 PID control SMPS PIC circuit diagram of 4000 watt smps full bridge lighting up LED with assembly language Microchip AN1074 PIC16F LED matrix IEC60929 dmx512 receiver
Contextual Info: LED Lighting Solutions September 2008 Adding Intelligence to Lighting Applications LED Lighting Design Guide www.microchip.com/lighting LED Lighting Solutions Table of Contents LED Lighting . 3

Contextual Info: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V

Contextual Info: Si5463EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.062 at VGS = - 4.5 V - 5.1 0.068 at VGS = - 3.6 V - 4.9 0.085 at VGS = - 2.5 V - 4.4 0.120 at VGS = - 1.8 V - 3.7 • Halogen-free According to IEC 61249-2-21