1206C104KAT Search Results

ATC capacitor 100b

Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130
Contextual Info: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

LT1637

Abstract: LT1637CDD
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 593 EVALUATION CARD FOR THE LT1637 IN THE DFN PACKAGE LT1637CDD DESCRIPTION Demonstration circuit 593 simplifies the evaluation of the LT1637CDD op amp in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LT1637 is the same as previous

LT1638

Abstract: LT1638CDD
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 594 EVALUATION CARD FOR THE LT1638 IN THE DFN PACKAGE LT1638CDD DESCRIPTION Demonstration circuit 594 simplifies the evaluation of the LT1638CDD op amp in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LT1638 is the same as previous

LT1636

Abstract: LT1636CDD DFN 10 socket
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 592 EVALUATION CARD FOR THE LT1636 IN THE DFN PACKAGE LT1636CDD DESCRIPTION Demonstration circuit 592 simplifies the evaluation of the LT1636CDD op amp in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LT1636 is the same as previous

Contextual Info: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

sniper

Abstract: LT1813 LT1813CDD 1206C104K DFN 10 socket
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 596 EVALUATION CARD FOR THE LT1813 IN THE DFN PACKAGE LT1813CDD DESCRIPTION Demonstration circuit 596 simplifies the evaluation of the LT1813CDD op amp in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LT1813 is the same as previous

LT1720CDD

Abstract: sniper LT1720 LAAV DFN 10 socket
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 603 EVALUATION CARD FOR THE LT1720 IN THE DFN PACKAGE LT1720CDD DESCRIPTION Demonstration circuit 603 simplifies the evaluation of the LT1720CDD comparator in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package.

smd mark 601 8 pin

Abstract: sniper LTC1541 LTC1541CDD DFN 10 socket
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 601 EVALUATION CARD FOR THE LTC1541 IN THE DFN PACKAGE LTC1541CDD DESCRIPTION Demonstration circuit 601 simplifies the evaluation of the LTC1541CDD building block in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LTC1541 is the same

MRF9130L

Abstract: MRF9130LR3 MRF9130LSR3
Contextual Info: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

J5001

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

"RF power MOSFETs"

Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

Soldering guidelines pin in paste

Abstract: LT1816 LT1816CDD
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 597 EVALUATION CARD FOR THE LT1816 IN THE DFN PACKAGE LT1816CDD DESCRIPTION Demonstration circuit 597 simplifies the evaluation of the LT1816CDD op amp in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LT1816 is the same as previous

LT1490

Abstract: LT1490A LT1490ACDD
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 591 EVALUATION CARD FOR THE LT1490A IN THE DFN PACKAGE LT1490ACDD DESCRIPTION Demonstration circuit 591 simplifies the evaluation of the LT1490ACDD op amp in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LT1490 is the same as previous

LTC1540

Abstract: LTC1540CDD
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 600 EVALUATION CARD FOR THE LTC1540 IN THE DFN PACKAGE LTC1540CDD DESCRIPTION Demonstration circuit 600 simplifies the evaluation of the LTC1540CDD comparator in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package.

1206C104KAT

Abstract: LT1396 LT1396CDD sniper
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 604 EVALUATION CARD FOR THE LT1396 IN THE DFN PACKAGE LT1396CDD DESCRIPTION Demonstration circuit 604 simplifies the evaluation of the LT1396CDD op amp in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LT1396 is the same as previous

pin in paste

Abstract: LT6203 LT6203CDD
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 599 EVALUATION CARD FOR THE LT6203 IN THE DFN PACKAGE LT6203CDD DESCRIPTION Demonstration circuit 599 simplifies the evaluation of the LT6203CDD op amp in the tiny, 3mm x 3mm, DFN Dual in-line, Flat, No-leads chip-scale package. Electrical performance of this LT6203 is the same as previous

Contextual Info: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

irl120

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

j3068

Abstract: 1990 1142
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 0, 12/2005 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

irl120

Abstract: 100B1R0BW 100B3R9BW AVX 100B ON Semiconductor marking c21
Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

600B

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S18100N MRF6S18100NBR1 MRF6S18100NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d