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    120N06 Search Results

    120N06 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLM120N06G
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 2.6mΩ typical RDS(on) at VGS = 10V, DFN5x6 package, suitable for DC/DC converters and power management applications requiring low on-resistance and high switching performance. Original PDF
    badge SLP120N06T
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 4.4mΩ typical RDS(on) at VGS = 10V, suitable for high-efficiency power management, load switching, and PWM applications. Original PDF
    badge SLB120N06T
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 4.4mΩ typical RDS(on) at VGS = 10V, TO-263 package, suitable for high-efficiency power switching applications. Original PDF
    badge SLD120N06T
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 4.2mΩ typical RDS(on) at VGS = 10V, low gate charge, and fast switching performance in a D-Pak package. Original PDF
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    120N06 Price and Stock

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    Infineon Technologies AG IAUC120N06S5L022ATMA1

    MOSFET_)40V 60V)
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    DigiKey () IAUC120N06S5L022ATMA1 Cut Tape 11,740 1
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    Avnet Americas IAUC120N06S5L022ATMA1 Tape & Reel 26 Weeks 5,000
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    Mouser Electronics IAUC120N06S5L022ATMA1 5,000
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    Ameya Holding Limited IAUC120N06S5L022ATMA1 10,000
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    EBV Elektronik IAUC120N06S5L022ATMA1 10,000 27 Weeks 5,000
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    Taiwan Semiconductor TSM120N06LCP-ROG

    MOSFET N-CHANNEL 60V 70A TO252
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    DigiKey () TSM120N06LCP-ROG Digi-Reel 10,657 1
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    Infineon Technologies AG IAUC120N06S5N011ATMA1

    MOSFET_)40V 60V)
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    DigiKey () IAUC120N06S5N011ATMA1 Cut Tape 4,392 1
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    Mouser Electronics IAUC120N06S5N011ATMA1
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    Newark IAUC120N06S5N011ATMA1 Cut Tape 2,603 1
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    Rochester Electronics IAUC120N06S5N011ATMA1 96,519 1
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    Taiwan Semiconductor TSM120N06LCS-RLG

    MOSFET N-CHANNEL 60V 23A 8SOP
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    DigiKey () TSM120N06LCS-RLG Digi-Reel 4,195 1
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    TSM120N06LCS-RLG Tape & Reel 2,500 2,500
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    Infineon Technologies AG IAUC120N06S5N032ATMA1

    MOSFET_)40V 60V)
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    DigiKey () IAUC120N06S5N032ATMA1 Cut Tape 4,087 1
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    Avnet Americas IAUC120N06S5N032ATMA1 Tape & Reel 26 Weeks 5,000
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    Mouser Electronics IAUC120N06S5N032ATMA1
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    Newark IAUC120N06S5N032ATMA1 Cut Tape 4,629 1
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    Rochester Electronics IAUC120N06S5N032ATMA1 35,907 1
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    120N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    120N06N

    Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng PDF

    IPB120N06N

    Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 PDF

    120N06N

    Abstract: 120N06
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 120N06N 120N06 PDF

    120N06N

    Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 68-1n 120N06N 120N06 ipp120n06ng IPP120N06N G PDF

    120N06N

    Abstract: 75F75 IPP120N06N 120n06 PG-TO220-3
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - normal level 60 11.7 SMDversion ID 75 V m: A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N PG-TO220-3 PG-TO263-3 120N06N page10 120N06N 75F75 120n06 PG-TO220-3 PDF