1215N Search Results

WED8L24257V

Abstract: DSP5630X
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

EDI8L24129V

Contextual Info: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution

WED8L24513V

Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

Contextual Info: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129\taBC is a 3.3V, three megabit SRAM 128Kx24 bit CMOS Static Random Access Memory Array constructed with three 128Kx8 die mounted on a multi­

intel 80368 Instruction set Architecture

Abstract: i386 dx i386 DX-25 80286 microprocessor paging mechanism logical block diagram of 80286 386TM 230985 pkc 2111 i386dx CA 5210 PL
Contextual Info: in te i Intel386 DX MICROPROCESSOR 32-BIT CHMOS MICROPROCESSOR WITH INTEGRATED MEMORY MANAGEMENT Flexible 32-Bit Microprocessor — 8, 16, 32-Bit Data Types — 8 General Purpose 32-Bit Registers Very Large Address Space — 4 Gigabyte Physical — 64 Terabyte Virtual

EDI88128CS45CB

Abstract: as128Kx8 663D
Contextual Info: EDI88128CS ^ E D l 12SKx8 Monolithic Sialic Ram ELECTRONIC. DESIGNS, INC. Features 72RfGtf Monotihic Hicfi Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory • Fast Access Times: 12,15r 17,2Q 25,35r 45r & 55ns TTie EDI88128CS is a high speect high performance

WED8L24258V

Contextual Info: WED8L24258V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

TDK CE-0702

Abstract: ce-0702 0505n CE-0703 0505-n 15p20 CE-0700 15N20 TDK ce series converter 1205P
Contextual Info: 9 Power supplies DC to DC Converters DC to DC conve rters DC TO DC CONVERTERS Input voltage Edc: 5V, 4.5 to 5.5V and 4.5 to 16V SZC, CFK Single or multi-output and CHG series SZC SERIES FEATURES • On board, non isolation type DC to DC converter. SPECIFICATIONS

Contextual Info: WED8L24514V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns

WED8L24513V

Abstract: 2106XL
Contextual Info: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs

512kx8

Contextual Info: WED8L24514V Asynchronous, 3.3V, 512Kx24 FEATURES 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24514V is ideal for creating a single

DSP5630x

Abstract: EDI8L24129V
Contextual Info: ^EDI ED I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC Asynchronous, 3.3V, 128Kx24 SRAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10,12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

DSP5630x

Abstract: p 602 EDI8L24129V
Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

Contextual Info: LA N H S e r i e s 1 W a t t SIP or to 1 W att DIP - LAN H S e r ie s F ea tures Up to One W att Output Power 10ODVDC Input/ Output Isolation Miniature Package Size Single and Dual Outputs Five Year Warranty T he LAN H S e r ie s fr o m W all I n d u s t r ie s

Contextual Info: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V

DSP5630X

Contextual Info: EDI8L24257V Asynchronous, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The EDI8L24257VxxBC is a 3.3V, three megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24257V is

Contextual Info: WED8L24514V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

IBJT

Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,

Contextual Info: EDI88130CS ^EDI 128Kx8 Monolithic Static Ram ELECTRONIC DESIGNS, INC Features 128Kx8 Monolithic CMOS Static RAM, Highspeed 128Kx8 bits Monolithic CMOS Static Random Access Memory • The EDI88130CS is a high speed, high performance, Fast Access Times: monolithic Static RAM organized as 128Kx8 bits.

7 k 3456

Abstract: WED8L24513V
Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

MARK 8E diode

Abstract: EDI8F3265C15MMC EDI8F3265C15MZC EDI8F3265C20MMC EDI8F3265C20MZC EDI8F3265C25MMC EDI8F3265C25MZC jedec 64-pin simm
Contextual Info: EDI8F3265C 64Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 64Kx32 bit CMOS Static The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4

IBJT

Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Contextual Info: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but