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    100504S10Y Renesas Electronics Corporation 64KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
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    Hitachi Ltd 64KX4-15

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    Hitachi Ltd 64KX4-150

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    64KX4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K6E0804C1E-C CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998 Final Draft Data


    Original     		PDF K6E0804C1E-C 64Kx4 K6E0804C1E- 28-SOJ-300

    Untitled

    Abstract: No abstract text available
    Text: P U E L M M A m in t e i C 1P O C Q L LOW POWER 64Kx4 CHMOS DYNAMIC RAM 51C259L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C259L-15 150 51C259L-20 200 0.1 0.1 • TTL And HC Compatible Low Power Data Retention - Standby current, CHMOS — 100 /iA


    OCR Scan     		PDF 64Kx4 51C259L-12 51C259L-15 51C259L-20 51C259L 51C259L

    Untitled

    Abstract: No abstract text available
    Text: 64KX4 BASED Dense-Pac Microsystems, inc. C M O S SRAM FAM ILY DESCRIPTION: The Dense-Pac 64K X4 Based Fam ily consists of static ra n d o m a c c e s s m e m o rie s S R A M S o rg a n iz e d as described below. T h ese m em ories are ideally suited for use in large


    OCR Scan     		PDF 64KX4 DPS5124 DPS5124-45C DPS5124-55C DPS5124-55I 24-55M DPS6432-45C DPS6432-55C DPS6432-55I

    Untitled

    Abstract: No abstract text available
    Text: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a


    OCR Scan     		PDF EDI8M1665C 64Kx16 EDI8M1665C 1024K-bit 64Kx4 64Kx4) 64Kx16 28Kx8 256Kx4 I8M1665C

    Untitled

    Abstract: No abstract text available
    Text: i 'A I W H IT E / M I C R O E L E C T R O N I C S 64Kx4 SRAM W P S 64K 4- X S J X PRELIMINARY* PLASTIC PLUS FEATURES • Access Times 15,17, 20nS PIN C O N FIG U R A T IO N TO P VIEW ■ Standard Commercial Off-The-Shelf COTS Memory Devices for Extended Temperature Range


    OCR Scan     		PDF 64Kx4 WPS64K4-XSJX 28LEAD,

    Untitled

    Abstract: No abstract text available
    Text: _ EDI8466CA ^ ED I Electronic D e ig n s Inc. High Speed Monolithic 256K SRAM niF@M^TD i 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8466CA is a high performance CMOS Static RAM organized as 65,536 locations x 4 bits. The EDI8466CA offers an Output Enable function GS for


    OCR Scan     		PDF EDI8466CA 64Kx4 EDI8466CA EDI8466CA12MC EDI8466CA1CMC EDI8466CA15MC EDI8466CA12RC

    V53C464

    Abstract: WJ 66 scr
    Text: Nf VITEUC V53C261 FAMILY HIGH PERFORMANCE LOW POWER 64KX4 MULTIPORT VIDEO MEMORY WITH FAST PAGE MODE V V53C261 10 12 Max. RAS Access Time, tRAC 100 ns 120 ns Max Column Address Time, (trA A ) 45 ns 55 ns HIGH PERFORMANCE V53C261 Min. Fast Page Mode Cycle Time, (tp c )


    OCR Scan     		PDF V53C261 64KX4 V53C261 V53C464 WJ 66 scr

    Untitled

    Abstract: No abstract text available
    Text: Q S86442 High-Speed CMOS 64Kx4 Cache TAG RAM Q QS86442 ADVANCE INFORMATION FEATURES/BENEFITS Fast Match and Access times • Access time of15ns/20ns/25ns/35ns Commercial • Match time of 15ns/20ns/25ns/35ns Commercial • Low power, high-speed QCMOS technology


    OCR Scan     		PDF S86442 64Kx4 QS86442 of15ns/20ns/25ns/35ns 15ns/20ns/25ns/35ns 300-mil, 28-pin MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: KM64258C CMOS SRAM 64Kx4 Bit With OE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 :140 mA (Max.)


    OCR Scan     		PDF KM64258C 64Kx4 KM64258C-12 KM64258C-15 KM64258C-20 KM64258CJ 28-SOJ-3QO KM64258C 144-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM64258E CMOS SRAM Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1 .1 9 9 8 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right


    OCR Scan     		PDF KM64258E 64Kx4 28-SOJ-300

    64kx4 DRAM

    Abstract: marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24
    Text: MICRON TECHNOLOGY INC 3ÔE D . li^ .i m blllSM^ 000247b b IMRN r~EV ¿ -2 3 - 3 ? n if i» g is is g l ¿ •ù -i 64Kx4 DRAM WITH 256 X 4 SAM VRAM • • • • Industry standard pinout, tim ing and functions H igh performance CMOS silicon gate process


    OCR Scan     		PDF 64Kx4 256-cycle 250mW 100ns 100ns, 120ns, 150ns, T-46-23-37 64kx4 DRAM marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24

    F16K

    Abstract: 7306
    Text: QS7306 Q 64K x 4 Ultra Deep FIFO Memory Q S7306 ADVAN CE INFORMATION F E A TU R E S /B E N E FIT S • • • • • 64Kx4 Ultra Deep FIFO Reversible A to B or B to A OE control pin 1/2,1/4, 1/16,1/32 status flags Directly cascades with another UD FIFO


    OCR Scan     		PDF QS7306 QS7306 64Kx4 24-pin F16K 7306

    Untitled

    Abstract: No abstract text available
    Text: QS7316 Q 64K x 4 Ultra Deep Burst Mode Dual Port RAM QS7316 ADVANCE INFORMATION FE A TU R E S /B E N E FIT S • • • • • 64Kx4 Ultra Deep Dual Port Allows simultaneous access on both ports 4 cycles first read access, 1 cycle burst read access All operations occur on rising edge of clock


    OCR Scan     		PDF QS7316 QS7316 64Kx4 50MHz 32-pin 16-bit

    IMS1820E-25

    Abstract: IMS1820M IMS1820P-25 IMS1820S-25 IMS1820W-25
    Text: IMS1820 CMOS High Performance 64K x 4 Static RAM m o s D ESC R IPTIO N FE ATU R E S The IN M O S IM S1820 is a high perform ance 64Kx4 C M O S Static RAM. The IM S 1820 allows speed enhance­ m ents to existing 64K x 4 applications w ith the additional benefit of reduced pow er consum ption .


    OCR Scan     		PDF IMS1820 300-mil 64Kx4 timi52 IMS1820 IMS1820E-25 IMS1820M IMS1820P-25 IMS1820S-25 IMS1820W-25

    Untitled

    Abstract: No abstract text available
    Text: EDI8F1665C ^EDI B*ctronfc Designs In c." High Speed Megabit SRAM Module ILOMÔMÂiaV 64Kx16 Static RAM CMOS, High Speed Module Features The EDI8F1665C is a high speed 1 megabit Static RAM module organized as 64Kx16. This module is constructed from four 64Kx4 Static RAMs in SOJ packages on an epoxy


    OCR Scan     		PDF EDI8F1665C 64Kx16 EDI8F1665C 64Kx16. 64Kx4 EDI8F1665C20MMC EDI8F1665C25MMC EDI8F1665C30MMC

    EDI8465C35

    Abstract: No abstract text available
    Text: ^EDI _ EDI8465C Electronic D«*lgro Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8465C is a high speed CMOS Static RAM organized as 64Kx4. Inputs and outputs are TTL compatible and albw for direct interfacing with common system bus architecture.


    OCR Scan     		PDF EDI8465C 64Kx4 EDI8465C 64Kx4. MIL-STD-883, EDI8465LP) EDI8465C25QB EDI8465C35QB EDI8465C35

    Untitled

    Abstract: No abstract text available
    Text: ^ E D I EDI8F2465C B«ctronle D#$Jgn* In e ." High Speed 1.5 Megabit SRAM Module UDDM 64Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2465C is a high speed 1.5 megabit Static RAM module organized as 64Kx24. This module is con­ structed from six 64Kx4 Static RAMs in SOJ packages on an


    OCR Scan     		PDF EDI8F2465C 64Kx24 EDI8F2465C 64Kx24. 64Kx4 EDI8F2465C20MMC EDI8F2465C25MMC EDI8F2465C30MMC

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    Untitled

    Abstract: No abstract text available
    Text: QS86440 High-Speed CMOS 64Kx4 SRAM with Common I/O Q Q S86440 ADVANCE INFORMATION FEATURES/BENEFITS • High Speed Access and Cycle times • 12ns/15ns/20ns/25ns Commercial • 15ns/20ns/25ns/35ns Military • TTL compatible I/O • Low power, high-speed QCMOS technology


    OCR Scan     		PDF QS86440 64Kx4 S86440 12ns/15ns/20ns/25ns 15ns/20ns/25ns/35ns MIL-STD-883, 24-pin 28-pin

    Untitled

    Abstract: No abstract text available
    Text: Q S7316 64K x 4 Ultra Deep Q QS7316 Burst Mode Dual Port RAM in f o r m a t io n FEATURES/BENEFITS 64Kx4 Ultra Deep Dual Port Allows simultaneous access on both ports 4 cycles first read access, 1 cycle burst read access All operations occur on rising edge of clock


    OCR Scan     		PDF S7316 QS7316 64Kx4 50MHz 32-pin

    Untitled

    Abstract: No abstract text available
    Text: SRAM Test Configuration Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load +5V Figure 1. GNDto 3.0V 3 ns 1.5V 1.5V See Figures +5V Output test loads for: 4Kx4, 16Kx4, 64Kx4, 32Kx8 &128Kx8 SRAMs Except Low-Power


    OCR Scan     		PDF 16Kx4, 64Kx4, 32Kx8 128Kx8 8Kx18 8Kx16 32Kx8

    A7 transistor

    Abstract: No abstract text available
    Text: QS86447 High-Speed CMOS 64Kx4 SRAM . _ , , . . with Address Latch Q QS86447 IN INFORMATION FE A T U R E S /B E N E F IT S • • • • • High Speed Access and Cycle times 15ns/20ns/25ns/35ns Commercial Common I/O with Output Enable Low power, high-speed QCMOS technology


    OCR Scan     		PDF QS86447 64Kx4 15ns/20ns/25ns/35ns MIL-STD-883 300-mil, 28-pin QS86447 A7 transistor

    Untitled

    Abstract: No abstract text available
    Text: SM33264 2MBit 64Kx 32 CMOS Fast SRAM Module General Description Features The SM33264 is a high performance, 2-megabit static RAM module organized as 64K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package. The module utilizes eight 64Kx4 high speed static RAMs


    OCR Scan     		PDF SM33264 64-pin, 64Kx4

    Untitled

    Abstract: No abstract text available
    Text: PEELM M kUY 51C258LT LOW POWER 64Kx4 CHMOS DYNAMIC RAM ¡ n te T 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C258L-15 150 0.1 51C258L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 /iA


    OCR Scan     		PDF 51C258LT 64Kx4 51C258L-12 51C258L-15 51C258L-20 51C258L 51C258L