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    122N10N Search Results

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    122N10N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD122N10N3GATMA1

    MOSFET N-CH 100V 59A TO252-3
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    DigiKey () IPD122N10N3GATMA1 Cut Tape 29,593 1
    • 1 $1.25
    • 10 $0.93
    • 100 $0.78
    • 1000 $0.69
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    IPD122N10N3GATMA1 Digi-Reel 29,593 1
    • 1 $1.25
    • 10 $0.93
    • 100 $0.78
    • 1000 $0.69
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    IPD122N10N3GATMA1 Reel 27,500 2,500
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    Avnet Americas () IPD122N10N3GATMA1 Reel 2,500 16 Weeks 2,500
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    IPD122N10N3GATMA1 Ammo Pack 17 Weeks, 1 Days 1
    • 1 $1.32
    • 10 $0.98
    • 100 $0.80
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    Mouser Electronics IPD122N10N3GATMA1 24,550
    • 1 $1.35
    • 10 $0.98
    • 100 $0.81
    • 1000 $0.66
    • 10000 $0.56
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    Newark () IPD122N10N3GATMA1 Cut Tape 15,275 1
    • 1 $0.17
    • 10 $0.17
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    IPD122N10N3GATMA1 Reel 2,500
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    Bristol Electronics IPD122N10N3GATMA1 99
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    Rochester Electronics IPD122N10N3GATMA1 4,138 1
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    • 100 $0.77
    • 1000 $0.64
    • 10000 $0.57
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    Chip One Stop IPD122N10N3GATMA1 Cut Tape 1,976 0 Weeks, 1 Days 1
    • 1 $0.67
    • 10 $0.61
    • 100 $0.47
    • 1000 $0.43
    • 10000 $0.43
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    EBV Elektronik IPD122N10N3GATMA1 17 Weeks 2,500
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    Vyrian IPD122N10N3GATMA1 23,801
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    Infineon Technologies AG IPD122N10N3GBTMA1

    MOSFET N-CH 100V 59A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPD122N10N3GBTMA1 Digi-Reel 1
    • 1 $0.97
    • 10 $0.97
    • 100 $0.97
    • 1000 $0.97
    • 10000 $0.97
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    IPD122N10N3GBTMA1 Cut Tape
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    IPD122N10N3GBTMA1 Reel
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    Rochester Electronics IPD122N10N3GBTMA1 100 1
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    • 100 $0.47
    • 1000 $0.39
    • 10000 $0.35
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    Infineon Technologies AG IPD122N10N3 G

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    Bristol Electronics IPD122N10N3 G 712
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    122N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    122N10N

    Contextual Info: 122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.2 mW ID 59 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPD122N10N3 IEC61249-2-21 PG-TO252-3 122N10N 122N10N PDF

    122N10N

    Abstract: IPD122N10N3 G JESD22
    Contextual Info: 122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.2 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPD122N10N3 PG-TO252-3 122N10N 122N10N IPD122N10N3 G JESD22 PDF