Untitled
Abstract: No abstract text available
Text: KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO
|
Original
|
PDF
|
KSC3076
O-251
|
1241 transistor
Abstract: KSC3076 transistor a 1241
Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 I-PACK ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic Symbol VCBO 50 V Collector Emitter Voltage
|
Original
|
PDF
|
KSC3076
1241 transistor
KSC3076
transistor a 1241
|
KSC3076
Abstract: No abstract text available
Text: KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO
|
Original
|
PDF
|
KSC3076
KSC3076
|
305 d-pack
Abstract: No abstract text available
Text: FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO
|
Original
|
PDF
|
FJD3076
305 d-pack
|
SOT 23 AJW
Abstract: ATF-54143 ATF55143 ATF-55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
Text: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Agilent Technologies’ ATF-55143 is a low noise enhancement mode PHEMT designed for use in low
|
Original
|
PDF
|
ATF-55143
ATF-55143
5988-3399EN
SOT 23 AJW
ATF-54143
ATF55143
LL1608-F2N7S
LL1608-FH10NK
LL1608-FH2N7S
LL1608-FH5N6K
agilent pHEMT transistor
agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
|
NEC lcd backlight inverter 65pw061
Abstract: E170632 FCC16202AB NL6448BC20-20 DF9-31S-1V NEC E170632
Text: TFT COLOR LCD MODULE NL6448BC20-20 17cm 6.5 Type VGA DATA SHEET DOD-PD-1362 (1st edition) This DATA SHEET is updated document from PRELIMINARY DATA SHEET DOD-PD-1241(1). All information is subject to change without notice. Please confirm the sales representative before
|
Original
|
PDF
|
NL6448BC20-20
DOD-PD-1362
DOD-PD-1241
147Nm.
NEC lcd backlight inverter 65pw061
E170632
FCC16202AB
NL6448BC20-20
DF9-31S-1V
NEC E170632
|
ATF-55143
Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER SOT 23 AJW ATF-54143 ATF55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K knife edge isolation
Text: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies’ ATF-55143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz
|
Original
|
PDF
|
ATF-55143
ATF-55143
ATF55143
5988-3399EN
5989-3007EN
agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
SOT 23 AJW
ATF-54143
LL1608-F2N7S
LL1608-FH10NK
LL1608-FH2N7S
LL1608-FH5N6K
knife edge isolation
|
a1241
Abstract: k 1241 transistor SA1241
Text: KSC3076 NPN EPITAXIAL SILICO N TRANSISTOR POW ER AM PLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to K S A 1241 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage Symbol VcBO 50 V Collector Emitter Voltage
|
OCR Scan
|
PDF
|
KSC3076
a1241
k 1241 transistor
SA1241
|
Untitled
Abstract: No abstract text available
Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol j C o lle cto r Base Voltage C o lle cto r E m itter Voltage Vceo
|
OCR Scan
|
PDF
|
KSC3076
|
darlington bd647
Abstract: TL 2262 lg bd645 tic 2260 BD649
Text: File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A O A pplications: t Features: m Power switching Hammer drivers • Operates from IC without predriver Series and shunt
|
OCR Scan
|
PDF
|
BD643,
BD645,
BD647,
BD649
O-22QAB
BD649
220AB
darlington bd647
TL 2262
lg bd645
tic 2260
|
Untitled
Abstract: No abstract text available
Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • Low C ollector Em itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic VcBO Sym bol 50 V C ollector Em itter Voltage
|
OCR Scan
|
PDF
|
KSC3076
|
BD645
Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
Text: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts
|
OCR Scan
|
PDF
|
BD643,
BD645,
BD647,
BD649
O-22QAB
RCA-BD643,
BD649
1500b
BD645
BD647
darlington bd647
D 17275
n69s
BD643
B13 transistors
|
Untitled
Abstract: No abstract text available
Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol 50 V C ollecto r E m itter Voltage
|
OCR Scan
|
PDF
|
KSC3076
|
B0643
Abstract: d 17275 BD649C
Text: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts
|
OCR Scan
|
PDF
|
BD643,
BD645,
BD647,
BD649
O-220AB
RCA-BD643,
BD649
1500b
B0643
d 17275
BD649C
|
|
|
BD649
Abstract: BD647 TL 2262 BD64S 00m0
Text: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers
|
OCR Scan
|
PDF
|
BD643,
BD645,
BD647,
BD649
TQ-220AB
BD649
BD647
TL 2262
BD64S
00m0
|
Untitled
Abstract: No abstract text available
Text: MSSI121/241/241B M O S E L V IT E L IC INSTANT VOICE ROM Features • Single power supply can operate at 2.4V through 6V. ■ Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. ■ The voice content is stored for 7-12 seconds for
|
OCR Scan
|
PDF
|
MSSI121/241/241B
SI121
SI241/241B
MSM9159
MSM9159B
MSSI121/241/241B
PID224B
|
2SA1241
Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )
|
OCR Scan
|
PDF
|
2SA1241)
2SA1241
2SC3076
2SA1241
V10Urns
a1241
A 1241
transistor 2sa1241
1241 transistor
|
LT1244
Abstract: No abstract text available
Text: I T L l f l t A C _ LT1241 Series TECHNOLOGY High Speed Current M ode Pulse Width Modulators KRTUiKS DCSCRIPTIOn • Low Start-Up Current: <250|iA ■ 50ns Current Sense Delay ■ Current Mode Operation: To 500kHz ■ Pin Compatible with UC1842 Series
|
OCR Scan
|
PDF
|
LT1241
500kHz
UC1842
LT1246
LT1248/LT1249
LT1372
LT1376
LT1509
500kHz
LT1244
|
Untitled
Abstract: No abstract text available
Text: 19- 1155; Rev 1; 9/97 +2.7V, Low -Pow er, 12-B it S e ria l ADCs In 8-Pin SO Power consum ption is only 37mW Vd d = 3V at the 73ksps maximum sam pling speed. A 2 mA shutdown mode reduces power at slower throughput rates. The MAX1240 has an interna! 2.5V reference, while the
|
OCR Scan
|
PDF
|
MAX1240/MAX1241
10-bit
AX1240
73ksps
MAX1240
-403C
-55aC
MIL-STDS83.
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BF 660W PNP Silicon RF Transistor ’ For VHF oscillator applications Type Marking BF 660W LEs Ordering Code Pin Configuration Q62702-F1568 1=B Package 2= E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage Values '/CEO 30 Collector-base voltage
|
OCR Scan
|
PDF
|
Q62702-F1568
OT-323
S35bGS
0235hD5
235b0Â
100MHz
6235bG5
|
Untitled
Abstract: No abstract text available
Text: March 1997 DataSheet microelectronics group * r Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features Description • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,
|
OCR Scan
|
PDF
|
26LS31
DS97-229LDRT
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet + March 1997 microelectronics ~ ~ group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features Description • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,
|
OCR Scan
|
PDF
|
26LS31
26LS3107914384
|
Untitled
Abstract: No abstract text available
Text: Data Sheet July 1998 group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNG A, PNPA, and PPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption, and significantly lower levels of EMI
|
OCR Scan
|
PDF
|
26LS31
BPNPA16E-TR
BPNPA16G
16-pin,
BPNPA16G-TR
BPNPA16P
BPPGA16E
BPPGA16E-TR
|
lucent btk1a16g
Abstract: No abstract text available
Text: Preliminary Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, andTMIA Features Description Driver Features TheTKI A, TL1A, and TM1A devices are dual differ ential transceiver circuits that transmit and receive
|
OCR Scan
|
PDF
|
16-pin,
lucent btk1a16g
|
