00M0 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAsMMIC> 00M077 37, • MGF7108A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION OUTLINE DRAWING MGF7108A is a GaAs monolithic microwave integrated circuits for Unit:millimeters use in 900MHz band power amplifiers. @ Va c FEATURES NU

2SA1015

Contextual Info: I t i 50113Q 00M0S31 MBS I Consumer Series Consumer Series continued y ceo V EBO (V) Min (V) Min (V) Min TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 CS9018D TO-92 (92) CS9018F Device No. Case Style CS9014C

ulw diode

Contextual Info: TEXAS INSTR -CASIC/MEUORYJ ?7 dË | 8961725 TEXAS INSTR <ASIC/MEMORY 0 ^ 1 7 5 5 00M0fl71 77C 40871 D TM4416KU8 16,384 BY 8-BIT DYNAMIC RAM MODULE ADVANCE INFORMATION SEPTEMBER 1985 - REVISED NOVEMBER 1985 U SINGLE-M-UNE PACKAGE TOP VIEW ) 16,384 X 8 Organization

Contextual Info: _ _ _ N AUER PHILIPS/DISCRETE _ ! i_ _ OLE I> • 0 8 0 0 1 3 0 AMPEREX, H IC K SVILLE 86D 0 1 80 8 D T-33-05 ^53131 00m04b b | BLX91CB SILICON PUNAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video

D41D2

Contextual Info: HARRIS SEMICON» SECTOR 5bE D • H3ÜB271 00M077S 272 H H A S File Number 2338 D 4 1 D S6TÍ68 1 = 3 3 -/ 7 1-Ampere Silicon P-N-P Power Transistors Complementary to the D40D Series TERMINAL DESIGNATIONS Features: High free-air power dissipation • Low collector saturation voltage I-0.5V typ. @ -1A Iq ,

Contextual Info: 5bE / = D • 7 S G ^ 7 # 7^ 5 3 7 S - T H 00M03a7 O M S O - I h S ’Y 55T M SG TH N 0 » fl0 g IS iIL I( g T r M D ( g i S G M 5 4 H C 4 0 2 8 M 7 4 H C 4 0 2 8 S-THOMSON BCD-TO-DECIMAL DECODER ■ HIGH SPEED tPD = 25 ns (TYP. at VCc = 5V ■ LOW POWER DISSIPATION

1000 v fast recovery rectifier diodes

Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564
Contextual Info: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

74ALS08

Abstract: MS-012-AB 74ALS 74ALS08D 74ALS08N SOL-24 SIGNETICS N PACKAGE 24
Contextual Info: Signetics 74ALS08 Quad 2-Input AND Gates Product Specification ALS Products FUNCTION TABLE OUTPUT IN P U T S TYPICAL PROPAGATION DELAY TYPE A B Y H H H L X L X L L NOTES: H = High voltage level L = Low voltage level X = Don't care 74A L S 0 8 5 .0 ns TYPICAL SUPPLY CURRENT

TEXTOOL zif 40 pin socket

Abstract: MS-012-AB 74ALS 74ALS32 74ALS32D 74ALS32N SOL-24 TEXTOOL zif 28 pin socket
Contextual Info: 74ALS32 Signetics Quad 2-Input OR Gates Product Specification ALS Products FUNCTION TABLE O UTPUT IN P U T S T Y P IC A L P R O P A G A T IO N DELAY TYPE A B Y H X H X H H L L L NO TES: H = High voltage level L = Low voltage level X = Don't care 5 .0 ns 74A LS32

dd407

Abstract: BYX110GP DDMD731 QDM073M
Contextual Info: 5bE D 7110Ö2L> □D4D731 IPHIN Mb2 Product specification P h ilip s se m ico n a u cto rs T - O l - O BYX110GP EHT avalanche diode PHILIPS IN TERNATIONAL FEATURES • G lass passivated and supplied in plastic encapsulated envelopes • Withstands accelerated damp

TEXTOOL zif socket

Abstract: MS-012-AB 74ALS 74ALS74A ALS74A N74ALS74AD N74ALS74AN SOL-24
Contextual Info: Signetics 74ALS74A FLIP-FLOP 74ALS74A Dual D-Type Flip-Flops with Set and Reset Product Specification ALS Products DESCRIPTION T h e 'A LS 74A is a dual edge-triggered D type flip-flop featuring individual data, Set and R es e t inputs, with_true and com ple­

NDT452P

Contextual Info: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.

S8302

Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Contextual Info: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage

TEXTOOL zif socket

Abstract: MS-012-AB 74ALS 74ALS253 N74ALS253D N74ALS253N SOL-24
Contextual Info: Signetics 74ALS253 Multiplexer ALS Products Dual 4-Input Multiplexer 3-State FEATURES Preliminary Specification • 3-state outputs for bus interface and multiplex expansion • Common select inputs TYPE • Separate Output Enable inputs TYPICAL SUPPLY CURRENT

MS-012-AB

Abstract: 74ALS 74ALS241A 74ALS241A-1 74ALS241A-1D 74ALS241A-1N 74ALS241AD 74ALS241AN
Contextual Info: Signetics 74ALS241 A, 74ALS241A-1 Buffer ALS Products Octal Buffer 3-State Product Specification FEATURES • Octal bus interface • 3-State buffer outputs sink 24mA and source 15mA • The -1 version sinks 48mA iQL within the ±5% Vc c range TYPE T Y P IC A L S U P P L Y C U R R E N T

MS-012-AB

Abstract: 74ALS240A 74ALS240A-1 74ALS240A-1D 74ALS240A-1N 74ALS240AD 74ALS240AN SOL-24
Contextual Info: Signetics 74ALS240A, 74ALS240A-1 Buffer ALS Products Octal Inverter Buffer 3-State Product Specification FEATURES • Octal bus interface TYPICAL PROPAGATION DELAY TYPE • 3-State buffer outputs sink 24mA and source 15mA • The -1 version sinks 48mA L

Contextual Info: TOSHIBA TM P90C840A/841A CMOS 8-BIT MICROCONTROLLERS TMP90C840AN/TMP90C841AN TM P90C840AF/TM P90C841AF 1. OUTLINE AND CHARACTERISTICS The TMP90C840A is a high-speed advanced 8-bit micro controller applicable to a variety of equipment. With its 8-bit CPU, ROM, RAM, A/D converter, multi-function timer/event counter

BD649

Abstract: BD647 TL 2262 BD64S 00m0
Contextual Info: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers

Contextual Info: TTiTEB? 0D4D225 3T1 • S 6 T H SbE » T - £ 2 -0 *1 M54HC540/541 M74HC540/541 S G S -T H O M S O N ■ IL IÊ in S O R O O Ê i HC540 OCTAL BUS BUFFER INVERTING 3-STATE HC541 OCTAL BUS BUFFER (3-STATE) S G S-THOMSON ■ HIGH SPEED tpD = 11 ns (TYP.) at V c c = 5V

Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V

lf7a

Contextual Info: SSP7N60A Advanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.) @ V DS = 600V

TDA 5020

Abstract: 40555 Transistor d27c128 D27C64 mask ram bma 023 LXY Series marking code SKs 20P2N-A FAG 29 diode
Contextual Info: MITSUBISHI MICROCOMPUTERS 4280 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS DESCRIPTION • C arrier wave output function port CARR The 4280 Group is a 4-bit single-chip microcomputer designed with CMOS technology for remote control transmitters. The 4280

Contextual Info: -r-33-ôl BD533, BD534, BD535, BD536, BD537, BD538 HARRIS SEMICOND SECTOR 5bE J> • Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number iz3 6 43G5571 Q04Db7S 3^1 IHAS TERMINAL DESIGNATIONS General-Purpose Medium-Power Types for Switching and Amplifier Applications

6d40 engine diagram

Abstract: 27mhz remote control receiver ic rx 2b circuit FO HD64404BT sony g14 q2 colour tv receiver H669 Renesas C2L4 Delta Electronics dps 750 vba EQ7 SONY TVR 4621 sony g14 colour tv receiver
Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,