edo dram 60ns 72-pin simm
Abstract: simm EDO 72pin edge connector sl36 edo ram 72pin edo dram 60ns 72-pin simm 32mb 4C32M4F-A60C "32mb x 36" simm edo dram 72-pin simm 32
Text: SL36 S/T 4C32M4F-AxxC 32M X 36 BITS DRAM SIMM with EDO and Optimized for ECC FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL36.-A60C 60ns 15ns 104ns 25ns SL36.-A70C 70ns 20ns 124ns 30ns The SiliconTech SL36(S/T)4C32M4F-AxxC is a 32MB x 36 bits
|
Original
|
PDF
|
4C32M4F-AxxC
-A60C
104ns
-A70C
124ns
4C32M4F-AxxC
32-pin
400-mil
72-pin
BDQ31-34
edo dram 60ns 72-pin simm
simm EDO 72pin
edge connector sl36
edo ram 72pin
edo dram 60ns 72-pin simm 32mb
4C32M4F-A60C
"32mb x 36" simm edo
dram 72-pin simm 32
|
MSC2323258D
Abstract: No abstract text available
Text: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a
|
Original
|
PDF
|
MSC2323258D-xxBS4/DS4
152-word
32-bit
MSC2323258D-xxBS4/DS4
72-pin
MSC2323258D
|
MSC23V43257D
Abstract: MSC23V43257D-50BS8 MSC23V43257D-60BS8 MSC23V43257D-70BS8
Text: This version: Apr. 13. 1999 Semiconductor MSC23V43257D-xxBS8 4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23V43257D-xxBS8 is a 4,194,304-word x 32-bit CMOS dynamic random access memory module which is composed of eight 16Mb 4Mx4 DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an
|
Original
|
PDF
|
MSC23V43257D-xxBS8
304-word
32-bit
MSC23V43257D-xxBS8
100-pin
MSC23V43257D
MSC23V43257D-50BS8
MSC23V43257D-60BS8
MSC23V43257D-70BS8
|
Untitled
Abstract: No abstract text available
Text: STI642004G1 -70 VG 144-PIN SO-DIMMS 2M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tRAC 1 1 tCAC 70ns 20ns *RC ^HPC 124ns 30ns The Simple Technology STI642004G1-70VG is a 2M x 64 bits Dynamic RAM high density memory module. The Simple
|
OCR Scan
|
PDF
|
STI642004G1
144-PIN
124ns
STI642004G1-70VG
28-pin
400-mil
STI642004G1-70
|
Untitled
Abstract: No abstract text available
Text: STI641004G1-70SVGS 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DlMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: • • • • • • • • • • • *RAC ^CAC ‘ rc *HPC 70ns 20ns 124ns 30ns The Simple Technology STI641004G1-70SVGS is a 1M x 64
|
OCR Scan
|
PDF
|
STI641004G1-70SVGS
144-PIN
STI641004G1-70SVGS
44-pin
400-mil
Tab17.
|
Untitled
Abstract: No abstract text available
Text: IBM11S2325H 2 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 rac RAS Access Tim e 60ns 70 ns tc A G CAS Access Tim e 15ns 20 ns A ccess Tim e From Address 30ns 35ns Cycle Tim e 104ns 124ns EDO Mode Cycle Tim e
|
OCR Scan
|
PDF
|
IBM11S2325H
72-Pin
104ns
124ns
128ms
|
Untitled
Abstract: No abstract text available
Text: IBM11S2325L 2 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 Irac RAS Access Tim e 60ns 70 ns tcAG CAS Access Tim e 15ns 20 ns A ccess Tim e From Address 30ns 35ns Cycle Tim e 104ns 124ns EDO Mode Cycle Tim e
|
OCR Scan
|
PDF
|
IBM11S2325L
72-Pin
104ns
124ns
128ms
|
KM416v1204at
Abstract: KM416V1204AT-7
Text: STI641004G1-70VG 144-PIN SO-DIMMS 1 M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: t RAC j t CAC *RC 70ns 20ns 124ns The Simple Technology STI641004G1-70VG is a 1M x 64 bits Dynamic RAM high density memory module. The Simple
|
OCR Scan
|
PDF
|
STI641004G1-70VG
144-PIN
124ns
STI641004G1-70VG
44-pin
400-mil
14ied
KM416v1204at
KM416V1204AT-7
|
Untitled
Abstract: No abstract text available
Text: IBM11S2325L 2M x 32 SODIMM M odule Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: • • • • -60 -70 W c RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns t/kA Access Time From Address 30ns 35ns tRC Cycle Time 104ns 124ns
|
OCR Scan
|
PDF
|
IBM11S2325L
72-Pin
104ns
124ns
128ms
50H4743
SA14-4556-00
2Mx32
1Mx16
|
Untitled
Abstract: No abstract text available
Text: IBM11S1325L 1 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 I rac RAS Access Tim e 60ns 70 ns tcA G CAS Access Tim e 15ns 20 ns Ua A ccess Tim e From Address 30ns 35ns I rc Cycle Tim e 104ns 124ns
|
OCR Scan
|
PDF
|
IBM11S1325L
72-Pin
104ns
124ns
128ms
|
TC514265DJ
Abstract: TC514265D TC514265 SOJ40-P-400
Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper
|
OCR Scan
|
PDF
|
TC514265DJ/DFT-50/60/70
TheTC514265DJ/DFT
TheTC514265DJ/
TC514265DJ/DFT
TC514265D
J/DFT-50/60/70
DR04041293
TC514265DJ
TC514265
SOJ40-P-400
|
TC5117405
Abstract: No abstract text available
Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are
|
OCR Scan
|
PDF
|
THM328025BS/BS
THM328025BS/BSG
TC5117405BSJ
704mW
THMxxxxxx-60)
074mW
THMxxxxxx-70)
DM32020695
M328025BS/BSG
THM328025BS/BSG-6Q/70
TC5117405
|
DC244
Abstract: No abstract text available
Text: STI644004G1-70SVGS pcbhw^ - j 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-70SVGS is a 4M x 64 bits Dynamic RAM high density memory module;. The Simple Technology STI644004G1-70SVGS consist of s ixteen CMOS
|
OCR Scan
|
PDF
|
STI644004G1-70SVGS
144-PIN
124ns
STI644004G1-70SVGS
24-pin
300-mil
DC244
|
34S71
Abstract: 005D C1005D
Text: K M 4 4 C 1 005 DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power
|
OCR Scan
|
PDF
|
KM44C
KM44C1005DJ
003427b
34S71
005D
C1005D
|
|
|
Untitled
Abstract: No abstract text available
Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)
|
OCR Scan
|
PDF
|
IBM11M2645H
2Mx64
104ns
124ns
|
Untitled
Abstract: No abstract text available
Text: IB M 1 1 D 1 3 2 5 L IB M 1 1 D 2 3 2 5 L 1M/2M x 32 DRAM Module Features Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & C M O S compatible Extended Data Out E DO access cycle Refresh Modes: RAS-Only, CBR, and Hidden
|
OCR Scan
|
PDF
|
72-Pin
104ns
124ns
11D1325L
IBM11D2325L
26H3205
26H3206)
50H7995
|
Untitled
Abstract: No abstract text available
Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • Low Power Dissipation • 4,194,304 word by 4 bit organization - Active max - 95 mA / 85 mA / 75 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version)
|
OCR Scan
|
PDF
|
IBM0117405
IBM0117405M
IBM0117405B
IBM0117405P
28H4726
28H4726.
350ns
350ns)
|
Untitled
Abstract: No abstract text available
Text: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !
|
OCR Scan
|
PDF
|
IBM11S4325BP
IBM11S4325BM
72-Pin
104ns
124ns
|
Untitled
Abstract: No abstract text available
Text: IBM11T1645LP IBM11T1645NP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • System Performance Benefits: - Reduced noise 18 VSs/18VCc pins
|
OCR Scan
|
PDF
|
IBM11T1645LP
IBM11T1645NP
VSs/18VCc
1104ns
124ns
|
DG34B
Abstract: No abstract text available
Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM44C4
KM44C4104BS
D034b64
DG34B
|
CS53
Abstract: MSC23V13258D-70BS2 MSC23V13258D-XXBS2
Text: M SC23V13258D-xxBS2 98.3.12 OKI semiconductor MSC23V13258D-xxBS2 . 1,048,576 Word X 32 Bit DYNAMIC RAM MODULE D E S C R IP T IO N The Oki MSC23V13258D-XXBS2 is a fully decoded, 1,048,576-word X 32 bit CMOS dynamic random access memory composed of two 16-Mb (1 Mx16) DRAMs in TSOP packages. The mounting of two DRAMs together with
|
OCR Scan
|
PDF
|
MSC23V13258D-xxBS2
MSC23V13258D-XXBS2
576-word
100-pin
32-Bit
cycles/16
Row/10
CS53
MSC23V13258D-70BS2
|
KM44C4004B
Abstract: No abstract text available
Text: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM44C4004B
KM44C4004BS
0034S12
|
km416c254b
Abstract: No abstract text available
Text: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
|
OCR Scan
|
PDF
|
KM416C254B,
KM416V254B
256Kx
256Kx16
00E02M3
km416c254b
|
KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
|
