125DIA Search Results

Contextual Info: Amphenol SMA Coaxial Connectors Between Series Adapters Fig. 1 Fig. 2 ,.719 , [ - 08.3 -] .630 dia. - 16.0)- 1.00 sq (25.4) .700 dia. .125dia. (17.8) 0.2) 4 places 1.00" sq. flange N Jack to SMA Jack N Jack to SMA Jack 901- 3143-1000 901-9720 .750 (19.1) hex

3.5 DC Jack

Abstract: jack 3,5 mm jack 3.5 mm Amphenol SMA DC-12 125DIA
Contextual Info: a Fig. 1 Fig. 2 c d Fig. 3 a f d c e max. panel Adapters Amphenol Adapters, Between Series Bulkhead and Panel Mount f a .719 18.3 1.00 sq. (25.4) .630 dia. (16.0) .538 (13.7) .700 dia. .125dia. (3.2) (17.8) 4 places b b .750 (19.1) hex N Jack to SMA Jack

3.5 DC Jack

Abstract: jack 3,5 mm jack 3.5 mm 901-9173
Contextual Info: a Fig. 1 Fig. 2 c d Fig. 3 a f d c e max. panel Adapters Amphenol Adapters, Between Series Bulkhead and Panel Mount f a .719 18.3 1.00 sq. (25.4) .630 dia. (16.0) .538 (13.7) .700 dia. .125dia. (3.2) (17.8) 4 places b b .750 (19.1) hex N Jack to SMA Jack

Contextual Info: Amphenol Adapters. Between Series Bulkhead and Panel Mount Fig. 1 Fig. 2 Fig. 3 .700 dia. .125dia 17 8 (3-2) 4 places .750 (19.1) hex N Jack to SMA Jack 901-3143-1000 BNC Jack to SMC Jack 903-377A-52B1 N Jack to SMA Jack 901-9720 VSWR: 1.3 max. DC-18 GHz

Allen-Bradley mod pot

Abstract: mod pot 70 series 2BT1 ALLEN-BRADLEY POTENTIOMETER 100K TYPE J rotary potentiometer dual concentric shaft 104 505A 72tO2 mod pot ALLEN-BRADLEY hot molded RESISTOR 7 pin rotary Potentiometers
Contextual Info: S e r ie s 7 0 ,7 2 ,7 3 H o t-M o ld e d Carbon, Conductive Plastic CP , and Cermet Panel Potentiometers UNMATCHED FLEXIBILITY The MOD POT Family includes: Series 70 - Metal or Plastic Shaft - Metal Bushing. Series 72 - Plastic or Metal Shaft - Plastic Bushing.

AV22LC

Abstract: av0630c9 cav9 av47 AV3002F
Contextual Info: AV series Anti-vandal and security pushbutton switches Distinctive features UG1006-A-R2 ❑ Attractive, robust and durable • Irremovable • Anti-jamming construction : reduced travel to prevent insertion of foreign parts • Contact and mechanism protected against crushing

BM45-12

Abstract: ACRIAN T808 LBAA BM45-12-2 Scans-00115720
Contextual Info: 0182998 A C R I AN INCT? D lT | 0 1 0 2 ^ 0 0D013D7 fl W ~07 D AN BM45"12 GENERAL DESCRIPTION 45 WATTS - 12.5 VOLTS 150-175 MHz The BM45-12 is specifically designed to meet rugged VHF land mobile radio requirements. Internal matching simplifies circuit design

ARF467

Abstract: arco mica trimmer ARF467FL 0-12V 700B VK200-4B vk200 rf choke 1W amplifier class ab
Contextual Info: ARF467FL D G ARF467FL S RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF467FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of

ARF475FL

Abstract: 2861006802 700B RG303 coax
Contextual Info: Common Source Push-Pull Pair ARF475FL D G S S G RF POWER MOSFET S S D N - CHANNEL PUSH - PULL PAIR 165V 450W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

ARF477fl

Contextual Info: Common Source Push-Pull Pair ARF477FL D G S S G S S ARF477FL D RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz.

ARF476FL

Abstract: ARF476 2861006802 700B
Contextual Info: Common Source Push-Pull Pair ARF476FL S D G S S G RF POWER MOSFET S S D D S ARF476FL D S N - CHANNEL PUSH - PULL PAIR G G S 165V 450W 150MHz The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage

Contextual Info: ENG. FILE COPY CAD DCN GENERATED CONTROLLED DRAWING DOCUMENT PRODUCT DATA DRAWING DWG.N O . SF5050-6031 MATERIALS: BODY: STAINLESS STEEL PER AMS-5640, UNS-S30300 TYPE1 INSULATOR: TEFLON PER ASTM-D-1457 CONTACT : BERYLLIUM COPPER PER ASTM-B196, COND. YD04, ALLOY UNS-C17300

Contextual Info: APR 1 5 !9S1 SMART SM33264 June 1990 Preliminary HoduUrTedinologies SM33264 256 KByte 64K x 32 CMOS SRAM Module General Description The SM33264 is a high performance, 2 Megabit static RAM module, organized as 64K words by 32 bits, in a 64-pin, single-in-line memory module

Contextual Info: ARF476FL Common Source Push-Pull Pair S G S S D RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR D S ARF476FL D G S D S S G G S 165V 450W 150MHz The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

206816-2

Abstract: 745330-2 745351-1
Contextual Info: AMP Specifications subject to change. For latest design specifications. HD-22 Front Metal-Shell Right-Angle Posted Connectors 350 Mount Dimensioning: Dimensions are in inches 1-800-522-6752 Receptacles Material and Finish: Front Shell— Steel, tin plated

BM15-12

Abstract: acrian inc BM1512 acrian
Contextual Info: ACRIAN T? INC b F I 0 10 2 □□□13 DLI a a BM15-12 GENERAL DESCRIPTION The BM15-12 is specifically designed to meet rugged VHF land mobile radio requirements. Internal matching simplifies circuit design and gives excellent broadband performance. Over 140-175 MHz range.

Contextual Info: Common Source Push-Pull Pair ARF477FL ARF477FL S S G G S D D ARF477FL S RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in ISM and MRI power amplifiers up to 100 MHz.

2643006302

Abstract: 2861006802 rf push pull mosfet power amplifier 700B ARF475 ARF475FL
Contextual Info: Common Source Push-Pull Pair ARF475FL D G S S G RF POWER MOSFET S S D N - CHANNEL ENHANCEMENT MODE 165V 300W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

Contextual Info: F-206 QTS-025-01-F-D-RA QTS-050-01 -F-D -R A -W T ,635m m SPE C IFIC A T IO N S For complete specifications and recommended PCB layouts see www.samtec.com?QTS-RA HI-SPEED HEADER SERIES Right Angle M ates with: QSS-RA, -GP, -LSX Insulator Material: Liquid Crystal

Contextual Info: Common Source Push-Pull Pair ARF477FL D G S S G S S ARF477FL D RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz.

Contextual Info: Conductive Plastic CP , an d Cermet Panel Potentiom eters UNMATCHED The MOD POT Family includes: Series 70 - Metal or Plastic Shaft - Metal Bushing. Series 72 - Plastic or Metal Shaft - Plastic Bushing.

Contextual Info: ARF466FL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. D ARF466FL G S RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency

arco mica trimmer

Abstract: 0-12V 700B ARF466FL VK200-4B 1W amplifier class ab
Contextual Info: ARF466FL ARF466FL RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency

0-12V

Abstract: 700B ARF466FL VK200-4B VK200 ferrite choke
Contextual Info: ARF466FL D ARF466FL G S RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency