126 DSD Search Results

d2516ec

Abstract: KE4CN2H5A kingston memory schematic
Contextual Info: REF: BBONEBLK_SRM BeagleBone Black System Reference Manual BeagleBone Black System Reference Manual Revision C.1 May 22, 2014 Author: Gerald Coley gerald@beagleboard.org Contributing Editor: Robert P J Day Page 1 of 126 Rev C.1 REF: BBONEBLK_SRM BeagleBone Black System

bfp640f

Abstract: transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ
Contextual Info: Application Note, Rev. 1.2, Oktober 2007 Application Note No. 126 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier LNA , with reduced external component count and reduced gain at 2.4 GHz RF & Protection Devices Edition 2007-10-17

414EH

Abstract: AQY410EH AQY410EHAX AQY410EHAZ AQY412EH AQY412EHAZ
Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 The attainment of economical pricing will broaden its market even further.

412EH

Abstract: AQY412EHAX 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Contextual Info: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 1. High cost-performance type of PhotoMOS relay 1 Form B output

Contextual Info: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode

Contextual Info: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode

412EH

Abstract: AQY412EHA AQY412EHAX aqy410 AQY414EH
Contextual Info: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) AQY41PEH FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data mm inch 1 4 2 3

AQY412EHA

Abstract: 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Contextual Info: VDE GU-E PhotoMOS AQY41PEH TESTING (AQY410EH, 414EH) (AQY412EH) General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 The attainment of economical pricing will

AQY410EHA datasheet

Abstract: AQY410EHAX AQY410EH AQY410EHA AQY410EHAZ AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
Contextual Info: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode

Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of

Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of

L200CUB500-5VF

Abstract: L200CUB500-3 DSDC0026 L200CUB500N-3
Contextual Info: LTR REVISION APPD E 09-29-98 SA F 03-16-00 SA Ø.224 [5.7] Ø.197 [5.0] Ø.197 [5.0] Ø.224 [5.7] .177 [4.5] .126 [3.2] .039 [1.0] DATE .339 [8.6] .152 [3.9] .039 [1.0] .059 MAX [1.5] .339 [8.6] .059 MAX [1.5] 1.00 [25.4] MIN 1.00 [25.4] MIN ANODE + ANODE (+)

Contextual Info: LTR REVISION APPD E 09-29-98 SA F 03-16-00 SA Ø.224 [5.7] Ø.197 [5.0] Ø.197 [5.0] Ø.224 [5.7] .177 [4.5] .126 [3.2] .039 [1.0] DATE .152 [3.9] .339 [8.6] .339 [8.6] .039 [1.0] .059 MAX [1.5] .059 MAX [1.5] 1.00 [25.4] MIN 1.00 [25.4] MIN ANODE + ANODE (+)

Contextual Info: GU-E 1 Form B AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of

AQY41EH

Abstract: AQY412 AQY414EH
Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 3. Normally closed type (1 Form B) is low on-resistance. (All AQ❍4 PhotoMOS are Form B types. And also the Form A types have

AQY410EH

Abstract: AQY410EHA AQY410EHAX AQY410EHAZ AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
Contextual Info: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 3. Compact 4-pin DIP size The device comes in a compact (W)6.4x(L)4.78×(H)3.2mm (W).252×(L).188×(H).126inch, 4-pin DIP

MT1389

Abstract: MT1389EE MT1389EE-L1 MT1389E MT1389* application ioa18 mt1389eel1 RD11 spdif input sc 90 servo micro motor
Contextual Info: 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 AGND DVDA DVDB DVDC DVDD DVDRFIP DVDRFIN

Contextual Info: % %( 7DQWDOXP &KLS &DSDFLWRUV 6WDQGDUG &RQVWUXFWLRQ • 3RODU WDQWDOXP FDSDFLWRUV ZLWK VROLG HOHFWURO\WH ■ ODPHUHWDUGDQW SODVWLF FDVH 8/  9 ■ 2SWLRQDOO\ WLQQHG RU JROGSODWHG WHUPLQDOV )HDWXUHV ■ ■ ■ ■ ■ ■ ■ +LJK YROXPHWULF HIILFLHQF\

Contextual Info: %+ %+ 7DQWDOXP &KLS &DSDFLWRUV +LJK&DS &RQVWUXFWLRQ • 3RODU WDQWDOXP FDSDFLWRUV ZLWK VROLG HOHFWURO\WH ■ ODPHUHWDUGDQW SODVWLF FDVH 8/  9 ■ 2SWLRQDOO\ WLQQHG RU JROGSODWHG WHUPLQDOV )HDWXUHV ■ ■ ■ ■ ■ ■ ■ 8OWUDKLJK YROXPHWULF HIILFLHQF\

Contextual Info: %3 %3 7DQWDOXP &KLS &DSDFLWRUV 3HUIRUPDQFH &RQVWUXFWLRQ • 3RODU WDQWDOXP FDSDFLWRUV ZLWK VROLG HOHFWURO\WH ■ ODPHUHWDUGDQW SODVWLF FDVH 8/  9 ■ 2SWLRQDOO\ WLQQHG RU JROGSODWHG WHUPLQDOV )HDWXUHV ■ ■ ■ ■ ■ ■ ■ ■ ■

Contextual Info: BurrĆBrown Products from Texas Instruments DSD1796 SLES101 – DECEMBER 2003 24ĆBIT, 192ĆkHz SAMPLING, ADVANCED SEGMENT, AUDIO STEREO DIGITALĆTOĆANALOG CONVERTER FEATURES D Supports Both DSD and PCM Formats D 24-Bit Resolution D Analog Performance: − Dynamic Range: 123 dB

Contextual Info: BurrĆBrown Products from Texas Instruments DSD1796 SLES101 – DECEMBER 2003 24ĆBIT, 192ĆkHz SAMPLING, ADVANCED SEGMENT, AUDIO STEREO DIGITALĆTOĆANALOG CONVERTER FEATURES D Supports Both DSD and PCM Formats D 24-Bit Resolution D Analog Performance: − Dynamic Range: 123 dB

Contextual Info: BurrĆBrown Products from Texas Instruments DSD1796 SLES101A – DECEMBER 2003 – REVISED NOVEMBER 2006 24ĆBIT, 192ĆkHz SAMPLING, ADVANCED SEGMENT, AUDIO STEREO DIGITALĆTOĆANALOG CONVERTER FEATURES D Supports Both DSD and PCM Formats D 24-Bit Resolution

DIX1700

Abstract: DF1706 Pacific Microsonics AES17 DF1704 DSD1792 DSD1796 DSD1796DB DSD1796DBR PMD200
Contextual Info: BurrĆBrown Products from Texas Instruments DSD1796 SLES101 – DECEMBER 2003 24ĆBIT, 192ĆkHz SAMPLING, ADVANCED SEGMENT, AUDIO STEREO DIGITALĆTOĆANALOG CONVERTER FEATURES D Supports Both DSD and PCM Formats D 24-Bit Resolution D Analog Performance: − Dynamic Range: 123 dB