AQY414EHAX Search Results

LED 3 w

Abstract: smd led datasheet Transistors Diodes smd e2 IR LED infrared led schematic diagram heater AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ LR26550
Contextual Info: AQY414EH PhotoMOS RELAYS GU General Use -E Type 1-Channel (FormB) 4-pin Type UL File No.: E43149 CSA File No.: LR26550 4.78 .188 3. Compact 4-pin DIP size The device comes in a compact (W)6.4 x (L)4.78 × (H) 3.2mm (W).252 × (L).188 × (H).126inch, 4-pin DIP size

AQY412EHA

Abstract: 414EH AQY412EH AQY414EH AQY410EH AQY410EHA AQY410EHAX AQY414EHA AQY414EHAX AQY412EHAX
Contextual Info: PhotoMOS MOSFET PhotoMOS MOSFET输出光电耦合器 输出光电耦合器) GE 1b(4脚型) 尺寸图 分类与电路构成 动作原理的说明 P.240 P.244 P.236 术语说明 使用注意事项 P.245 应用电路示例 P.246 对应RoHS VDE TESTING AQY410EH, 414EH

AQY414EH

Abstract: AQY414EHA AQY414EHAX AQY414EHAZ LR26550
Contextual Info: AQY414EH PhotoMOS RELAYS GU General Use -E Type 1-Channel (FormB) 4-pin Type UL File No.: E43149 CSA File No.: LR26550 4.78 .188 3. Compact 4-pin DIP size The device comes in a compact (W)6.4 x (L)4.78 × (H) 3.2mm (W).252 × (L).188 × (H).126inch, 4-pin DIP size

pc111 optocoupler

Abstract: PC123 optocoupler qtc 2630 qtc 2531 optocoupler qtc 2631 qtc 2531 PC817 SOP-4 qtc 2731 PC113 optocoupler pc120 optocoupler
Contextual Info: California Eastern Laboratories Optocoupler & Solid State Relay Product Cross-Reference HOW TO USE THIS GUIDE The Cross Reference provides a listing of CEL/NEC’s closest replacement devices to the Manufacturer. The replacement may or may not be an exact replacement, so the customer should consult both data

Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of

AQY41EH

Abstract: AQY412 AQY414EH
Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 3. Normally closed type (1 Form B) is low on-resistance. (All AQ❍4 PhotoMOS are Form B types. And also the Form A types have

Contextual Info: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode

RU 110012

Abstract: AQW216HAX AQY216 AQW612 211EH DIP4 aqw612s aqv258h schematic diagram induction furnace AQY232 AQY210
Contextual Info: Global Network North America Europe Asia Pacific China Japan Panasonic Electric Works Please contact our Global Sales Companies in: Europe  Headquarters Panasonic Electric Works Europe AG Rudolf-Diesel-Ring 2, 83607 Holzkirchen, Tel. +49 0 8024 648-0, Fax +49 (0) 8024 648-111, www.panasonic-electric-works.com

Contextual Info: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode

412EH

Abstract: AQY412EHA AQY412EHAX aqy410 AQY414EH
Contextual Info: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) AQY41PEH FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data mm inch 1 4 2 3

Contextual Info: GU-E 1 Form B AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of

412EH

Abstract: AQY412EHAX 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Contextual Info: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 1. High cost-performance type of PhotoMOS relay 1 Form B output

AQY412EHA

Abstract: 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Contextual Info: VDE GU-E PhotoMOS AQY41PEH TESTING (AQY410EH, 414EH) (AQY412EH) General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 The attainment of economical pricing will

414EH

Abstract: AQY410EH AQY410EHAX AQY410EHAZ AQY412EH AQY412EHAZ
Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 The attainment of economical pricing will broaden its market even further.

AQY410EHA datasheet

Abstract: AQY410EHAX AQY410EH AQY410EHA AQY410EHAZ AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
Contextual Info: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode

AQY410EH

Abstract: AQY410EHA AQY410EHAX AQY410EHAZ AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
Contextual Info: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 3. Compact 4-pin DIP size The device comes in a compact (W)6.4x(L)4.78×(H)3.2mm (W).252×(L).188×(H).126inch, 4-pin DIP

Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of

412EH

Abstract: AQY412EHAZ gu-e 414EH 80-85 applications AQY412EH AQY410EH AQY410EHA AQY414EH AQY414EHA
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✦✪ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU-E 1 Form B AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation

qtc 2601

Abstract: qtc 2531 pc111 optocoupler qtc 2631 qtc 2530 qtc 2630 qtc 2731 PC123 optocoupler qtc 2531 optocoupler QTC 3700
Contextual Info: California Eastern Laboratories OPTOCOUPLER & SOLID STATE RELAY CROSS REFERENCE OPTOCOUPLERS CROSS REFERENCE INDEX 1. SHARP . 1 2. TOSHIBA . 2

AQY414EH

Abstract: aqy41eh 414EH AQY410EH AQY410EHAX AQY412EH AQY412EHAZ AQY412EHA
Contextual Info: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 3. Normally closed type (1 Form B) is low on-resistance. (All AQ❍4 PhotoMOS are Form B types. And also the Form A types have

induction cooker schematic diagram

Abstract: AQG22212 210HL induction cooker block diagrams 211EH DIP4 aqv234 044 schematic diagram induction furnace 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM AQV251G 500w amply
Contextual Info: Global Network North America Europe Asia Pacific China Japan Panasonic Electric Works Please contact our Global Sales Companies in: Europe  Headquarters Panasonic Electric Works Europe AG Rudolf-Diesel-Ring 2, 83607 Holzkirchen, Tel. +49 0 8024 648-0, Fax +49 (0) 8024 648-111, www.panasonic-electric-works.com