12650EJ80D Search Results

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.