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    126N1 Search Results

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    Rochester Electronics LLC IPA126N10N3GXKSA1

    TRENCH >=100V
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    DigiKey IPA126N10N3GXKSA1 Bulk 1,226 302
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    Rochester Electronics LLC IPI126N10N3GXKSA1

    N-CHANNEL POWER MOSFET
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    DigiKey IPI126N10N3GXKSA1 Bulk 456 456
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    Infineon Technologies AG IPA126N10NM3SXKSA1

    MOSFET N-CH 100V 39A TO220
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    DigiKey IPA126N10NM3SXKSA1 Tube 181 1
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    Avnet Americas IPA126N10NM3SXKSA1 Tube 16 Weeks 500
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    Rochester Electronics IPA126N10NM3SXKSA1 500 1
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    TME IPA126N10NM3SXKSA1 1
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    EBV Elektronik IPA126N10NM3SXKSA1 17 Weeks 500
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    SOURIAU-SUNBANK BC7P12-6N1

    BATTERY CONNECTOR
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    DigiKey BC7P12-6N1 Bulk 25
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    Infineon Technologies AG IPI126N10N3-G

    MOSFET N-CH 100V 58A TO262-3
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    DigiKey IPI126N10N3-G Tube
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    126N1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    126N10N

    Contextual Info: 126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.6 mW ID 35 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA126N10N3 IEC61249-2-21 PG-TO220-FP 126N10N 126N10N PDF

    M126N-1064-100

    Abstract: M126N-1064-500 M126N-1064-700 JDSU npro M125N-1319-100 M126N-1064-200 M125N-1319-200 JDSU laser power supply Laser Head M126N-1319-100
    Contextual Info: COMMERCIAL LASERS ­ ontinuous-Wave CW Single-Frequency IR Laser C NPRO 125/126 Series Key Features • 1319 or 1064 nm outputs available • Fiber-coupled output • Proven nonplanar ring oscillator (NPRO) design • Superior power stability • Narrow linewidth


    Original     		M125N-1319-100 M125N-1319-150 M125N-1319-200 M126N-1319-100 M126N-1319-250 M126N-1319-350 M126N-1064-500 M126N-1064-700 M125N-1064-025 M126N-1064-100 M126N-1064-700 JDSU npro M126N-1064-200 JDSU laser power supply Laser Head PDF

    M126N-1064-200

    Abstract: M126N-1064-500 M126N-1064-700 M126N-1319-100 IEC608251 JDSU laser power supply JDSU npro
    Contextual Info: COMMERCIAL LASERS ­ ontinuous-Wave CW Single-Frequency IR Laser C NPRO 125/126 Series Key Features • 1319 or 1064 nm outputs available • Fiber-coupled output • Proven nonplanar ring oscillator (NPRO) design • Superior power stability • Narrow linewidth


    Original     		IEC60825-1. M125N-1319-100 M125N-1319-150 M125N-1319-200 M126N-1319-100 M126N-1319-250 M126N-1319-350 M126N-1064-500 M126N-1064-700 M126N-1064-200 M126N-1064-700 IEC608251 JDSU laser power supply JDSU npro PDF

    126N10N

    Abstract: PG-TO220FP 126N1 JESD22
    Contextual Info: 126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.6 mΩ ID 35 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA126N10N3 PG-TO220-FP 126N10N 126N10N PG-TO220FP 126N1 JESD22 PDF

    JDSU laser power supply

    Abstract: IR 0251 JDSU JDSU npro sonar ranging lidar SM13-P7 FS-PM-5121 TEM00 1319N
    Contextual Info: COMMERCIAL LASERS Continuous Wave CW Single-Frequency IR Laser NPRO 125/126 Series Key Features • 1319 or 1064 nm outputs available • Fiber-coupled output • Proven nonplanar ring oscillator (NPRO) design • Superior power stability • Narrow linewidth


    Original     		NPRO125126 498-JDSU 5378-JDSU JDSU laser power supply IR 0251 JDSU JDSU npro sonar ranging lidar SM13-P7 FS-PM-5121 TEM00 1319N PDF

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Contextual Info: 126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor 126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3 PDF

    126N10N

    Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
    Contextual Info: 126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor 126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 PG-TO220-3 PG-TO263-3 PG-TO262-3 126N10N 123N10N D46 diode 126n10 IPP126N10N3 G JESD22 PG-TO220-3 PDF