128K X 8 EEPROM JLCC Search Results

Contextual Info: 128K x 32 EEPROM Module PUMA 2/67E4001/A/B -12/15/20 Issue 4.3 : January 2001 Description Available in PGA Puma 2 , and JLCC (Puma 67) footprints, the Puma *E4001 is a 4 Mbit EEPROM module user configurable as 128K x 32, 256K x 16 or 512K x 8. Available with access times of 120, 150

Contextual Info: 128K x 32 EEPROM Module TIGA 2E4001 -12/15/20 TIGA 6E4001/A/B -12/15/20 TIGA 7E4001/A/B -12/15/20 Description Available in PGA TIGA 2 , JLCC (TIGA 1/6) and Gullwing (TIGA 7) footprints, the TIGA *E4001 is a 4 Mbit EEPROM module user configurable as 128K x 32, 256K x 16 or 512K x 8. Available with

Contextual Info: 128K x 8 EEPROM M E M 812 9 -1 5 /2 0 /2 5 Issue 12 .: February 1993 ADVANCE PRODUCT INFORMATION 131,072 x 8 bit MNOS EEPROM . Features — • Pin Definition Fast Access Time of 150/200/250 ns. Operating Power 200 mW typical. Standby Power 2.5mW typical.

Contextual Info: MFM8128V/J-25/30 Issue 1.1 : July 1989 128K x 8 CMOS FLASH MFM8128V/J EEPROM ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS FLASH EEPROM Features FLASH™ Eraseable Non-Volatile Memory Access Times of 250/300 ns Operating Temperature Range -40 to +85°C Supply voltage range of 5V±10%

Contextual Info: nAH 128K X 8 EEPROM m o î a ï c MEM8129-12/15/20 Issue 1.0: February 1992 M o s a ic ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 131,072 x 8 bit MNOS EEPROM Features Pin Definition Fast Access Time of 120/150/200 ns. Operating Power 200 mW typical.

Contextual Info: • 19g; 128K X 8 FLASH EEPROM molate MFM8128G/J/S/V/W-15/20 Issue 1.1 : JANUARY 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c t o r Pin D efinition Vpp A16 A15 A12 A7 A6 AS A4 A3 A2 A1 AO DO D1 D2 GND 131,072 x 8 CMOS FLASH EEPROM Memory Features Access Times of 150/200 ns

58C1001

Abstract: eeprom 4 pin 128k x 8 eeprom JLCC
Contextual Info: EEPROM FT58C1001 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory . SPECIFICATIONS 32-Pin CFP , 32-Pin CSOJ 32-Pin CSOP Comm. Ind, Mil MIL-STD-883 M5004 only RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss FEATURES High speed: 150, 200, and 250ns

MOSAIC SEMICONDUCTOR

Abstract: MEM8129M EM8129-15
Contextual Info: •jjt 80 128K x 8 EEP R O M molate MEM8129-15/20/25 Issue 1.3 : July 1993 M o s a ic S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION N Pin Definition ZD 32 Vcc NC 1 C 131,072 x 8 bit MNOS EEPROM Inc. Features Fast Access Time of 150/200/250 ns. Operating Power 200 mW typical.

Contextual Info: 128K x 32 EEPROM Module PUMA 2E4001 -12/15/20 PUMA 67E4001/A/B -12/15/20 PUMA 77E4001/A/B -12/15/20 Elm Road, West Chirton, North Shields, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description Available in PGA (Puma 2), JLCC (Puma 67) and

67E4001

Abstract: d29 08 E4001
Contextual Info: 128K x 32 EEPROM Module PUMA 2/67E4001/A/B -12/15/20 Issue 4.3 : January 2001 Elm Road, West Chirton, North Shields, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description Available in PGA (Puma 2), and JLCC (Puma 67) footprints, the Puma *E4001 is a 4 Mbit EEPROM

67e4

Abstract: E4001 77E4001 128k x 8 eeprom JLCC
Contextual Info: 128K x 32 EEPROM Module PUMA 2/67/77E4001/A - 12/15/20 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description Available in PGA (Puma 2), JLCC (Puma 67) and Gullwing (Puma 77) footprints, the Puma *E4001 is

77E4001

Abstract: pumas E4001
Contextual Info: 128K x 32 EEPROM Module PUMA 2E4001 -12/15/20 PUMA 67E4001/A/B -12/15/20 PUMA 77E4001/A/B -12/15/20 Elm Road, West Chirton, North Shields, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description Available in PGA (Puma 2), JLCC (Puma 67) and

SRAM 6T

Abstract: MSM8128 "32K x 8" SRAM dil SRAM 35ns "32K x 8" SRAM PLCC 2035 puma 5 128k x 8 eeprom JLCC
Contextual Info: Part Numbering M S M 8512 SC X L MB - 10 1. 2. 3. 4. 1. 2. Speed 7. 6. 5. TECHNOLOGY 5. PINOUT ARRANGEMENT The memory technology is represented by a single character:- This field identifies the mechanical arrangement of the device pinout:- S D E U blank E

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

hanbit non-volatile ram

Abstract: HMN1288J MN128
Contextual Info: HANBit HMN1288J Non-Volatile SRAM MODULE 1Mbit 128K x 8-Bit ,34Pin-JLCC, 5V Part No. HMN1288J GENERAL DESCRIPTION The HMN1288J Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits. The HMN1288J has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

M38510/10101

Abstract: 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105
Contextual Info: Product Selector Guide March 28, 2005 Analog Description Package SMD Number Part Number DIP 5962-87786 TDC1046 TRW DIP, LCC 5962-88532 TDC1049C1V TRW National A/D Converter, 6-Bit Flash A/D Converter, 9-Bit Comparator, Differential Die Mfg DIP, CAN, FP, LCC

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

Contextual Info: 128K x 8 FLASH mosaic MFM8126S - 70/90/12 semiconductor, inc. 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.2 : November 1998 Features General Description • Fast Access Time of 7 0 / 9 0 / 1 20ns.

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

Contextual Info: 128K x 8 FLASH MFM8126 - 70/90/12 Issue 4.3 : April 2001 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW Max Program/Erase 275mW (Max) Standby Power 5.5mW (Max) • JEDEC standard package. • Flexible Sector Erase Architecture - 16K byte sector

PA 0610 D5

Contextual Info: 128K x 8 FLASH MFM8126S - 70/90/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.2 : November 1998 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW (Max) Program/Erase 275mW (Max)

Contextual Info: 128K x 8 FLASH MFM8126 - 70/90/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 4.2 : November 1998 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW (Max)