M27C256B Search Results

ST M27C256B

Abstract: M27C256B PDIP28 PDIP32 PLCC32
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte

Contextual Info: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA

Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V 28 28 ■ PIN COMPATIBLE with M27C256B ■ LOW POWER CONSUMPTION:

m27c2568

Abstract: SGS M27C256B M27C256B M27C2568-15 PDIP28 PLCC32
Contextual Info: r Z J SGS-THOMSON ^7 # M27C256B R iflD 0 ® IIL ll© in S ® E !lD g i CMOS 256K (32K x 8 UV EPROM and OTP ROM • VERY FAST ACC ESS TIM E: 80ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE ■ LOW POWER “C M O S” CONSUMPTIO N:

ST M27C256B

Abstract: M27C256B PDIP28 PLCC32
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V 1

M27C256

Abstract: NM27C256B
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA 1 u d o FDIP28W (F) ■ Programming voltage: 12.75V ± 0.25V

ST M27C256B

Abstract: M27C256B MI 4606 4606 ic ap 4606 ap 4606 ic PDIP28 PLCC32
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V 1

M27C256B

Abstract: PDIP28 PLCC32
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V 1

M27C256B

Abstract: M27W256 PDIP28 PLCC32
Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V 28 28 ■ PIN COMPATIBLE with M27C256B ■ LOW POWER CONSUMPTION:

M27C256B

Abstract: IC 25 M27C256B 27C256B
Contextual Info: SCS-THOMSON M27C256B ^7# CMOS 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100pA - PROGRAMMING VOLTAGE: 12.75V

Contextual Info: M27C256B 256K 32K x 8 UV EPROM and OTP EPROM DATA BRIEFING FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 3sec.

FDIP28WB

Abstract: JESD97 M27C256B M27W256 PDIP28 PLCC32
Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ 28 28 Pin Compatible with M27C256B 1 1 ■ Low Power Consumption:

SGS M27C256B

Abstract: ST M27C256B NM27C256B
Contextual Info: [ Z J SCS-THOMSON M27C256B CMOS 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 30 mA - Standby Current 100 nA ■ PROGRAMMING VOLTAGE: 12.75V

m27c2568

Abstract: m27c2568-25 1N914 M27C256B PDIP28 A13D BA431
Contextual Info: SGS-THOMSON M27C256B HDfgœaLKgTTSQROQ 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10O^A

m27c256b datasheet

Abstract: ST M27C256B M27C256B PDIP28 PLCC32
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V 1

M27C256B

Abstract: ST M27C256B FDIP28W M27C256B 45 m27c256b datasheet presto PDIP28 PDIP32 PLCC32
Contextual Info: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte

Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ Pin Compatible with M27C256B ■ Low Power Consumption:

M27C256B-C

Abstract: ic SL 1626 27c256b
Contextual Info: SCS-THOMSON LI gTO W(Sl ^ 7# . R M27C256B 256K (32K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|aA ■ PROGRAMMING VOLTAGE: 12.75V ■ ELECTRONIC SIGNATURE for AUTOMATED

Contextual Info: ¿ = 7 S G S -T H O M S O N *-7# llD»i[Li gTO®Ki(g§ M27C256B 256K (32K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA ■ PROGRAMMING VOLTAGE: 12.75V ■ ELECTRONIC SIGNATURE for AUTOMATED

m27c2568

Abstract: M27C256B M27C256 1N914 PDIP28 72c5237
Contextual Info: r r z ^ 7 # S G S -T H O M S O N . M27C256B O f fl[l § [M B I[L i( ^ [ls M ( ê § 256K (32K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA ■ PROGRAMMING VOLTAGE: 12.75V

FZJ 141

Abstract: m27c2568 IC 25 M27C256B SGS M27C256B M27C256B PDIP28
Contextual Info: £ jJ S G S -T H O M S O N 0 §»ilLiM KI(gS M27C256B CMOS 256K (32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(iA

SGS M27C256B

Abstract: m27c256b datasheet M27C256B PDIP28 PLCC32
Contextual Info: M27C256B 256K 32K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 3sec.

M27C256B

Abstract: PDIP28 PLCC32
Contextual Info: M27C256B 256K 32K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 3sec.

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .