Untitled
Abstract: No abstract text available
Text: 128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns Page Write Cycle Time 10ms Max. JEDEC Approved Packages Data Polling for End of Write Detection Hardware and Software Data Protection
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
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WME128K8-XXX
Abstract: No abstract text available
Text: White Electronic Designs 128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
120ns
06HYX
01HXX
250ns
02HXX
WME128K8-XXX
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Untitled
Abstract: No abstract text available
Text: 128K8V-XXX HI-RELIABILITY PRODUCT 128Kx8 3.3V MONOLITHIC SRAM PRELIMINARY* FEATURES • Access Times 15, 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ Package 101 *
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WMS128K8V-XXX
128Kx8
MIL-STD-883
128K8
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ARINC 629 sim
Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
Text: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■
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UT69151
800-645-UTMC
800-THE-1553
800-THE-1553
ARINC 629 sim
m38510/55501
AMP ARINC-629 SIM
MT72038
smd cmos 4435
CQFP 240
arinc 629 controller
P2X smd
CERAMIC PIN GRID ARRAY CPGA lead frame
arinc 629
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs 128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
of128K
300ns
250ns
200ns
150ns
140ns
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smd mark 601 8 pin
Abstract: cmos SRAM 35ns 128k X 8 dip 5962-96691 WMS128K8-XXX
Text: 128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES n 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 n Access Times 15, 17, 20, 25, 35, 45, 55ns n MIL-STD-883 Compliant Devices Available n Revolutionary, Center Power/Ground Pinout
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WMS128K8-XXX
128Kx8
MIL-STD-883
lead17ns
10HYX
11HYX
05HXX
06HXX
07HXX
08HXX
smd mark 601 8 pin
cmos SRAM 35ns 128k X 8 dip
5962-96691
WMS128K8-XXX
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Untitled
Abstract: No abstract text available
Text: 128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH, SMD 5962-96690 FEATURES Access Times of 50*, 60, 70, 90, 120, 150ns Organized as 128Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ Package 101
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WMF128K8-XXX5
128Kx8
150ns
16KBytes
128Kx8
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ionograph
Abstract: 32256LK KM681001AJ SYS32128LK-020 ANH004 KM641001AJ
Text: Hybrid Memory Products Ltd SRAM Module Mean Time Between Failure Analysis MTBF Introduction In general terms, the reliability of any plastic module assembly can be assessed by dividing the assembly into 4 critical areas - active devices, passive devices,
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SYS32128LK-020
ionograph
32256LK
KM681001AJ
ANH004
KM641001AJ
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Untitled
Abstract: No abstract text available
Text: 128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH SMD 5962-96690* FEATURES Access Times of 50*, 60, 70, 90, 120, 150ns Organized as 128Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
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WMF128K8-XXX5
128Kx8
150ns
128Kx8
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7420 ic details
Abstract: pin diagram ic 7420 UV-EPROM A0-A12, D0-D7 ER410 TI645 EPROM128KX8 pinout 7420 2758 eprom
Text: mosaic MIXED TECHNOLOGY PUMA PUMA 2 US2500 semiconductor, inc. Issue4.0 : October 1995 2 ,0 9 7 ,1 5 2 bit UVEPROM and 52 4,2 88 bitSRAM Description Features The PUMA 2 U S 25 00 is a Mixed Technology Puma 2 Modu le comprising of 2 x 128K8 UVEPROM 's and 2 x 3 2 K 8 SRAM S. The device
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PUMA2US2500
128K8
16bitwide
250ns
150ns
US2500
0US2500
OCTOBER1995
170ns
MIL-STD-883
7420 ic details
pin diagram ic 7420
UV-EPROM A0-A12, D0-D7
ER410
TI645
EPROM128KX8
pinout 7420
2758 eprom
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B0580
Abstract: No abstract text available
Text: W W hite Technology, Inc MEMORY PRODUCTS P R E LIM IN A R Y NIC [ 1 A16 t 2 A15 c 3 A12 c 4 A7 c 5 A6 c 6 A5 [ 7 A4 c 8 A3 A2 A1 A0 c 9 [ 10 [ 11 L 12 i/oo : 13 1/01 I 14 I /0 2 [ 15 Vss [ 16 ^ WE-128K8-150 32 ] Vcc 31 ] WE 30 ] NC 29 ] A14 128K x 8 BIT CMOS EEPROM
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A0-A16
IQO-l/07
WE-128K8-150
E-128K
B0580
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marking HZA
Abstract: QML-38534 k8120c WMS128K8-15DJ
Text: REVISIONS LTR A DESCRIPTION DATE YR-MO-DA APPROVED 98-06-22 K. A. Cottongim Add device type 11. Change limits Iq q and I c C D R I in table I. REV SHEET REV A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 REV A A A A A A A A A A A A A A SHEET
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003bfi4D
marking HZA
QML-38534
k8120c
WMS128K8-15DJ
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Micron Quantum Devices
Abstract: LF400
Text: ADVANCE M IC R O N I ” MT28LF400 256K x 16. 512K X 8 FLASH MEMORY 256K x 16 , 512K X 8 3.3V/12V, BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: - 16KB/ 8K-word boot block (protected) - Two 8KB/4K-word parameter blocks - Four general memory blocks
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MT28LF400
120nA
100ns,
120ns
144x16
V/12V,
44-Pin
T28LF4G0
T28LF400
16-bit
Micron Quantum Devices
LF400
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Untitled
Abstract: No abstract text available
Text: HHITE /M ICRO ELECTRONICS W 128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101
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MF128K8-XXX5
128Kx8
150ns
128Kx8
16KByte
04HXX
05HXX
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smd A7t
Abstract: smd code A7t
Text: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, 128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
smd A7t
smd code A7t
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Untitled
Abstract: No abstract text available
Text: 128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300
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WME128K8-XXX
128Kx8
300nS
MIL-STD-883
Cycl250nS
128Kx
200nS
03HYX
150nS
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Untitled
Abstract: No abstract text available
Text: a W M 128K8V-XXX M/HITE /MICROELECTRONICS 128Kx8 3.3V MONOLITHIC SRAM PRELIM INARY * FEATURES • A c c e s s T i m e s 15, 17, 2 0, 2 5, 3 5 n s ■ M I L - S T D - 8 8 3 C o m p li a n t D e v ic e s A v a i l a b l e ■ R e v o lu tio n a r y , C e n t e r P o w e r / G r o u n d P in o u t
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S128K8V-XXX
128Kx8
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Untitled
Abstract: No abstract text available
Text: 128K8-XXXE W h it e E l e c t r o n ic D e sig n s C o r p o r a t io n 128Kx8 CMOS MONOLITHIC EEPROM ADVANCED* FEATURES FIG. 1 • Access Tim es of 150, 200, 250, 300ns PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 CSOJ • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300
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WME128K8-XXXE
128Kx8
300ns
128Kx8.
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T28F200
Abstract: No abstract text available
Text: ADVANCE MICRON I ,*— , M T2 8 F200 1 2 8 K x 16. 2 5 6 K x 8 FLASH M E M O R Y Trr, T FLASH MEMORY 128K X 16,256K X 8 5V/12V, BOOT BLOCK FEATURES • Five erase blocks: - 16KB/ 8K-word boot block protected - Two 8KB/4K-word parameter blocks - One 96KB/48K-word memory block
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V/12V,
96KB/48K-word
128KB/64K-word
100ns
MT28F200
16-bit
WTOTF200
T28F200
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Untitled
Abstract: No abstract text available
Text: 128K8V-XXX M/HITE M IC RO ELEC T RO N IC S 128Kx8 3.3V MONOLITHIC SRAM ADVANCED* FEATURES • Access Times 15,17, 20, 25, 35ns MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved Commercial, Industrial and Military Temperature Range
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WMS128K8V-XXX
128Kx8
MIL-STD-883
128K8V
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Untitled
Abstract: No abstract text available
Text: 128K8-XXX W hite El e c t r o n ic D esigns C o r p o r a t i o n 128Kx8 CMOS MONOLITHIC EEPROM. SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 1 2 0 ,1 4 0 ,1 5 0 , 200, 250, 300ns PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 CSOJ
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
Detectio140
120ns
300ns
250ns
200ns
150ns
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Untitled
Abstract: No abstract text available
Text: □ 128K8-XXX WHITE /M ICROELECTRONICS 128Kx8 M ONOLITHIC SRAM , S M D 5962-96691 pending PRELIMINARY* FEATURES A c c e s s T i m e s 17, 2 0, 2 5, 35, 4 5, 55n S • M I L - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e ■ R a d ia tio n T o l e r a n t D e v ic e s A v a i l a b l e
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WMS128K8-XXX
128Kx8
09HZX*
10HZX*
05HXX*
06HXX*
07HXX*
08HXX*
128KX
09HXX*
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Untitled
Abstract: No abstract text available
Text: I i 'À II liVHITE M IC RO ELECT RO N ICS 128Kx8 SRAM 128K8-XRJX prelim ina ry * PLASTIC PLUS FEATURES • Access Times 15,17, 20ns PIN C O N F IG U R A T IO N T O P V IE W AOC 1 A 1C 2 A 2C 3 A 3C 4 C SC 5 1/01 C 6 W ■ Standard Commercial Off-The-Shelf COTS Memory
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128Kx8
WPS128K8-XRJX
128K8
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Untitled
Abstract: No abstract text available
Text: W h it e E l e c t r o n ic D e s ig n s C o r p o r a t io n 128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 120,140, 150, 200, 250, 300ns PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J
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WME128K8-XXX
128Kx8
300ns
140ns
120ns
01HXX
250ns
02HXX
200ns
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