128KX8 EEPROM Search Results

1011541

Contextual Info: I 512kx8bitEEPROM-Radiation Hardened 7 t Q w ^ v n w V i n H w P 128 k x 8 P I V I M CM EEPROM M em ory For Space Applications SeI's 79C040RP RP WE ~ ~ CE- for RAD-PAK multiA».chip module (MCM) memory features a mini­ 128Kx8 128Kx8 128Kx8 128Kx8 mum 100 kilorad (Si) to­

32Kx16

Abstract: Intel EEPROM 32kx8
Contextual Info: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

Contextual Info: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp

48-PIN

Contextual Info: REFERENCE SIZE SRAM 1 M egabit PART NUMBER 3 M egabit SPEED ns PACKAGE 128Kx8 7 0 ", 85, 100, 120, 150 32-Pin D IP 32-Pin F LA T P A C 15 128Kx8, 64Kx16, 32Kx32 25, 35, 45, 55, 70 66-Pin P G A 23 2 0 *, 25, 30, 35, 45 48-Pin SLC C 48-Pin ° r Lead 48-Pin y Lead

Contextual Info: Extended Temperature, 5 Volt, 1 Megabit EEPROM TT28HT010 DESCRIPTION: The TT28HT010F/G/K/N memory contains a 128Kx8 EEPROMs, packaged in a hermetically sealed cermaic package, making the modules suitable for commercial, industrial military and extended temperature

WME128K8-XXX

Contextual Info: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP

WME128K8-XXX

Contextual Info: WME128K8-XXX White Electronic Designs 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES „ Read Access Times of 125, 140, 150, 200, 250, 300ns „ JEDEC Approved Packages „ Automatic Page Write Operation • Internal Address and Data Latches for 128 Bytes

Contextual Info: ^EDI EDI5M32128C 128Kx32 EEPROM ELECTRONIC 0ESX5N& N C 128Kx32 CMOS EEPROM Module Features 128Kx32 bit CMOS The EDI5M32128C is a high speed, high performance, our megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8 EEPROMs surface

Contextual Info: ^EDI EDI7F81024C ELECTRONIC DESIGNS INC. High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module The ED17F81024C isa5V-0nly In-System Programmable and Erasable Read Only Memory Module. raiuiiosMCT Features Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­

A17A18

Contextual Info: EDI7F8512C Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features and Erasable Read Only Memory Module. Organized as 512Kx8 bit CMOS Flash Electrically Erasable Programmable 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

L19C

Contextual Info: ^ E D EDI5C32128C I ELECTRONIC DESIGNS MC. High Performance Four Megabit EEPROM 128Kx32 CMOS EEPROM Multi-Chip Module Features The EDI5C32128C is a high performance, four megabit density EEPROM organized as 128Kx32 bits. The device has four 128Kx8 EEPROMs mounted in a 68

Contextual Info: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash

Contextual Info: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

Contextual Info: ^EDI EDI5M32128C ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128KX32 CMOS EEPROM Module ] gi II Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

Contextual Info: 32KX32 EEPROM MODULE ADVANCED FEATURES • Access times of 120,150, 200ns • Built in decoupling caps for low noise operation • Organized as 32Kx32; User configurable as 64Kxl6 or 128Kx8 • Operation with single 5 volt supply • Low power CMOS • TTL Compatible Inputs and Outputs

TDB 0156

Abstract: a/TDB 0156
Contextual Info: WME128K8-XXXE WHITE ELECTRONIC DESIGNS CORPORATION 128Kx8 CMOS MONOLITHIC EEPROM ADVANCED* FEATURES FIG. 1 • Access Times of 150, 200, 250, 300ns ■ JEDEC Approved Packages • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Hermetic Ce.ramic, 0.400" SOJ (Package 101)

Contextual Info: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

ACU51

Abstract: EEPROM128KX8 128KX8
Contextual Info: New Product Release Advanced Control Unit ACU ACU51 Block EEPROM 128Kx8 Four 8-Bit Parallel Ports Power Control Two Synch. Serial Ports Four Asynch. Serial Ports Digital Interface and Control Specifications Features • Size and Weight: 1.0” x 1.4” x 0.12”, 3 grams

Contextual Info: WME128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300

j3a11

Contextual Info: MD\ EDI7F32256C ELECTRONIC DESIGNS INC. « High Performance Eight Megabit Flash EEPROM 256Kx32 CMOS Flash EEPROM Module Features The EDI7F32256C is a 5V-0nly In-System Program­ mable and Erasable Read Only Memory Module. Orga­ nized as 256Kx32 bits, the module contains eight 128Kx8

Contextual Info: ^EDI EDI7F81024C ELECTRONIC DESIGNS INC. • High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The EDI7F81024C is a 5V-0nly In-System Program­ mable and Erasable Read Only Memory Module. Orga­ nized as 1Megx8 bits, the module contains eight 128Kx8

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPE51288 128KX8 CMOS EEPROM MODULE O D ESC RIPTIO N : The DPE51288 is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPRO M module organized as 128K X 8. The DPE51288 is pin compatable with

WME128K8-XXX

Contextual Info: WHITE ELECTRONIC DESIGNS CORPORATION WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns ■ JEDEC Approved Packages • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)