256KX16 Search Results

K6X4016C3F

Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
Contextual Info: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.

K6F4016U6G-EF70

Abstract: K6F4016U6G K6F4016U6G-F K6F4016U6GE
Contextual Info: Preliminary CMOS SRAM K6F4016U6G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark June 11, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

HY514264

Contextual Info: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60

KM6 II

Abstract: SRAM sheet samsung KM616
Contextual Info: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating

Scans-0012741

Contextual Info: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

Contextual Info: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n

da53

Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Contextual Info: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and

Contextual Info: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted

BQ4025

Abstract: bq4025Y
Contextual Info: h bq4025/bq4025Y BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in te g ra l co n tro l c irc u itry an d

BQ4025

Abstract: bq4025Y
Contextual Info: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium

Contextual Info: EDI816256CA 256Kx16 MONOLITHIC SRAM, SMD 5962-96795 FEATURES  256Kx16 bit CMOS Static The EDI816256CA is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The EDI816256CA uses 16 common input and output lines and has an output enable pin which operates faster than address access

Contextual Info: TT WHITE M IC R O E LEC TR O N IC S 256Kx16 SRAM 3.3V W PS256K16V-XU X ADVANCED* PLASTIC PLUS FEATURES • Access Tim es of 15,17, 20ns PIN CONFIGURATION TOP VIEW AO c 1 A1 c 2 A2 c 3 A3 c 4 A4 c 5 ■ Standard Commercial Off-The-Shelf COTS M em ory Devices fo r Extended Tem perature Range

Contextual Info: C3 WMS256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized 256Kx16

Contextual Info: a W MS256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess T im e s 17, 20, 25, 35ns D ata I/O C o m p a tib le w ith 3.3 V devices ■ M IL-S T D -883 C o m p lia n t D evices A v a ila b le 2V M in im u m D ata R ete n tio n fo r b a tte ry back up o p e ra tio n

Contextual Info: EDI8M16256C 35/45/55/70 Module The fu tu re . •■ A E>VAM C E OKIFOIF8MATDOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadless chip

SAMSUNG MCP

Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Contextual Info: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary

K6T4016C3B-TB70

Abstract: K6T4016C3B-B
Contextual Info: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996

Contextual Info: IC62LV25616L IC62LV25616LL Document Title 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No History Draft Date Remark 0A Initial Draft May 1,2001 Preliminary 0B 1. Change for tPWE: 45 to 40 ns for 55 ns product August 21,2001

HYUF6404D

Abstract: HYUF6404
Contextual Info: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

k6t4016c3c-tf70

Abstract: K6T4016C3C-TB70 K6T4016C3C-TB55 K6T4016C3C April 1999
Contextual Info: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: K6F4016S6D Family CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 16, 2000 Preliminary 1.0 Finalized April 20, 2000 Final Errata correction

Contextual Info: HY62UF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values

Contextual Info: K6T4016U6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 0.01 1.0 Draft Date Remark Initial draft Errata correction July 4, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.

Contextual Info: HY62LF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values