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    12CN10 Search Results

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    12CN10 Price and Stock

    Infineon Technologies AG IPP12CN10LGXKSA1

    MOSFET N-CH 100V 69A TO220-3
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    DigiKey IPP12CN10LGXKSA1 Tube 607 1
    • 1 $2.34
    • 10 $2.34
    • 100 $1.122
    • 1000 $0.81077
    • 10000 $0.76012
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    Avnet Americas IPP12CN10LGXKSA1 Tube 111 Weeks 500
    • 1 -
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    • 100 -
    • 1000 $0.67763
    • 10000 $0.62554
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    Rochester Electronics IPP12CN10LGXKSA1 22,640 1
    • 1 -
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    • 100 $0.8806
    • 1000 $0.7309
    • 10000 $0.6516
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    Chip One Stop IPP12CN10LGXKSA1 Tube 488 0 Weeks, 1 Days 1
    • 1 $0.79
    • 10 $0.789
    • 100 $0.782
    • 1000 $0.781
    • 10000 $0.778
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    Vyrian IPP12CN10LGXKSA1 5,941
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    Infineon Technologies AG IPB12CN10N-G

    MOSFET N-CH 100V 67A D2PAK
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    DigiKey IPB12CN10N-G Reel
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    Infineon Technologies AG IPI12CN10N-G

    MOSFET N-CH 100V 67A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI12CN10N-G Tube 500
    • 1 -
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    • 1000 $1.1354
    • 10000 $1.1354
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    Infineon Technologies AG IPP12CN10N-G

    MOSFET N-CH 100V 67A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP12CN10N-G Tube 500
    • 1 -
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    • 1000 $1.08734
    • 10000 $1.08734
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    Siemens 6XV18012CN10

    SITOP PSU8600 40A PN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 6XV18012CN10 Bulk 1
    • 1 $170.37
    • 10 $170.37
    • 100 $170.37
    • 1000 $170.37
    • 10000 $170.37
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    RS 6XV18012CN10 Bulk 2 Weeks 1
    • 1 $144.19
    • 10 $126.89
    • 100 $126.89
    • 1000 $126.89
    • 10000 $126.89
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    Find more 12CN10 price and stock on Findchips.com

    12CN10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10
    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10 PDF

    12CN10N

    Contextual Info: 12CN10N G 12CN10N G 12CN10N G 12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N PDF

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10
    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10 PDF

    12CN10N

    Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a
    Contextual Info: 12CN10N G 12CN10N G 12CN10N G 12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a PDF

    12CN10L

    Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG
    Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L 12CN10L D345 JESD22 PG-TO220-3 10069a IPP12CN10LG PDF

    12CN10L

    Abstract: D345 c25 diode to220 D83a
    Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3 12CN10L D345 c25 diode to220 D83a PDF

    PG-TO251-3-1

    Abstract: 12CN10L
    Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12 mW ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3-11 PG-TO251-3-1 12CN10L PDF

    12CN10N

    Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G
    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G PDF

    12CN10N

    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max 12 mW ID 69 A • 175 °C operating temperature


    Original     		IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L PDF

    12CN10N

    Abstract: IPP12CN10N IEC61249-2-21 IPI12CN10N PG-TO220-3 J-STD-20
    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N IEC61249-2-21 PG-TO220-3 J-STD-20 PDF