12JJS Search Results

Contextual Info: Æ T S C S -THOMSON * 7 #. ÜO g^(& l^(gWiQ(gi M29W040 4 Mb (512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical

Contextual Info: M29W040 4 Mbit 512Kb x 8, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical ■ ERASE TIME - Block: 1.5 sec typical

GW50

Contextual Info: MG30H2DM1 MG30H2YM1 GTR MODULE SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING A P P L I C A T I O N S . MOTOR CONTROL A P P L I C A T I O N S . • The Drain is Isolated from Case. • 2 MOS FETs are Built-in to 1 Package. • With Built-in Free Wieeling Diode .:

Contextual Info: LTC1443/LTC1444/LTC1445 TECHNOLOGY Ultralow Power Q u ad C om parators w ith Reference F6OTUIKS D C S C R IC T IO n • Ultralow Quiescent Current: 8.5jaA Max ■ Wide Supply Range Single: 2V to 11V Dual: ± 1 V to ±5.5V ■ Input Voltage Range Includes the Negative Supply

Contextual Info: Fot Immediate Assistance, Contact Your Local Salesperson BURR - BROW N C ADS7806 DEMO BOARD AVAILABLE See Appendix A for more information. Low-Power 12-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • 35mW max POWER DISSIPATION • 50|iW POWER DOWN MODE